Method and apparatus for low pressure sputtering

• US 5,830,330 A
• Filed: 05/22/1997
• Issued: 11/03/1998
• Est. Priority Date: 05/22/1997
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Lantsman, Alexander D.
• Primary Examiner(s): Nuzzolillo, M.
• Assistant Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US08/861,958
• Time in Patent Office: 530 Days
• Field of Search: 204/192.12, 204/192.13, 204/298.03, 204/298.06, 204/298.07, 204/298.08, 204/298.16, 204/298.18, 204/298.14
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/3471 Introduction of auxiliary energy into the plasma
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

Sputtering processes are carried out at low pressure, of less than one milli-Torr, particularly in the range of 0.05 to 0.5 mTorr, to reduce scattering of the sputtered particles due to collisions with atoms of the process gas, particularly for coating contacts at the bottoms of sub-micron sized holes of high aspect ratios. The sputtering is made possible by provision for a supplemental RF plasma generating source by which RF energy is reactively coupled into the gas within the chamber in close proximity to the surface of a sputtering target, preferably adjacent the periphery thereof. The pressure in the chamber as well as the power to an RF electrode by which the supplemental plasma is energized and the DC power by which the main target is energized are dynamically controlled so that the plasma is sustained at low pressure. First, the pressure in the chamber is raised to above 1 mTorr while the RF power on the supplemental electrode is applied to ignite the plasma, then this RF power is reduced and DC power on the target is increased to an operating level, whereupon the pressure in the chamber is reduced to below 1 mTorr for the low pressure sputtering of the wafer.

Claims

1. A method of sputtering comprising the steps of:

supporting a substrate in a vacuum sputtering chamber facing a target of a sputter coating material mounted on a sputtering cathode assembly in the chamber;

establishing a vacuum pressure of gas within the chamber;

coupling RF energy from a supplemental plasma electrode into gas in the chamber;

controlling the combined pressure in the chamber and the power to the supplemental plasma electrode at a level to ignite a plasma in the gas in the chamber;

following ignition of the plasma;

energizing the target with a target power supply so as to initiate the sputtering of coating material from the target with ions from the plasma;

then

while the target is energized, reducing the combined pressure and power to the supplemental plasma electrode to a level below that required for ignition of the plasma but above a level required to sustain the plasma so as to sputter the coating material from the target;

then, continuing to energize the target to a degree sufficient to sputter material from the target at a pressure of less than 1 mTorr to thereby coat the substrate with the sputtered material.

2. The method of claim 1 further comprising the step of:

providing the supplemental plasma electrode in the sputtering chamber in proximity to the sputtering cathode assembly.

3. The method of claim 1 further comprising the steps of:

providing the supplemental plasma electrode in proximity to a peripheral edge of the target and in proximity to a dark space shield around the target in the chamber.

4. The method of claim 1 further comprising the step of:

providing the supplemental plasma electrode in the sputtering chamber in proximity to a plane through a sputtering surface of the target.

5. The method of claim 1 further comprising the step of:

symmetrically providing a partitioned helical coil in the chamber around the perimeter of the sputtering cathode assembly.

6. The method of claim 1 wherein:

the target energizing step includes the step of energizing the sputtering cathode assembly with DC power.

7. The method of claim 1 wherein:

the target energizing step includes the step of energizing the sputtering cathode assembly with pulsed DC power.

8. The method of claim 1 wherein the controlling step includes:

reducing the pressure from that required for ignition of the plasma to less than 1 mTorr and below that required for ignition of the plasma but above that required to sustain the plasma.

9. The method of claim 1 further comprising the step of:

controlling RF power to the supplemental plasma electrode to vary the coupled RF energy to control the deposition rate on the substrate.

10. The method of claim 1 further comprising the steps of:

biasing the substrate;

ionizing the material sputtered from the target with the plasma at a point remote from the target;

controlling the bias on the substrate to attract the ionized sputtered particles toward the substrate.

11. The method of claim 1 wherein:

the electrode is a supplemental target of sputtering in the chamber surrounding the target in close proximity to the periphery thereof;

the coupling step includes the step of energizing the plasma by capacitively coupling RF energy to the gas by applying the energy to the supplementary target.

12. The method of claim 1 wherein:

the coupling step includes the step of energizing a supplemental plasma by inductively coupling RF energy to the gas by applying the RF energy to a coil surrounding the target in proximity to the periphery thereof.