Apparatus and method for sputtering carbon

• US 5,830,331 A
• Filed: 09/23/1994
• Issued: 11/03/1998
• Est. Priority Date: 09/23/1994
• Status: Expired due to Fees

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology plc (Seagate Technology Holdings Plc)
• Inventors: Shih, Yao-Tzung R., Bruno, John C., Zubeck, Robert B., Hollars, Dennis R., Lee, Hyung J., Kim, Taesun E.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US08/311,529
• Time in Patent Office: 1,502 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.16, 204/192.2, 204/192.22, 204/192.23, 204/298.08, 204/298.11, 204/298.26
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/0605 Carbon
• CPC Class Codes: G11B 5/84 Processes or apparatus specially adapted for manufacturing record carriers
• CPC Class Codes: G11B 5/8408 protecting the magnetic layer
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

A hydrogenated carbon film for magnetic thin film recording media is manufactured by alternating current magnetron sputtering in an atmosphere containing argon and a hydrocarbon gas. Targets mounted side-by-side cyclically sputter and discharge charge buildup according to an alternating current. Shielding between the targets directs electrons toward the anode at a given time.

Claims

1. A method for sputtering a carbon film for a magnetic thin film recording medium, comprising the steps of:

a) providing carbon-containing targets positioned side-by-side in an evacuated environment;

b) flowing a gas into the evacuated environment to a pressure capable of sustaining sputtering;

c) cyclically sputtering from the targets, which alternately act as a sputtering cathode and as an anode, to form the carbon film on the medium; and

d) providing an apertured baffle between the targets to enhance the movement of electrons toward a target anode during the sputtering step.

2. A method according to claim 1, wherein step c) is carried out under shielding conditions that intercept obliquely incident sputtered flux from the targets.

3. A method according to claim 1, wherein the gas comprises a hydrocarbon gas.

4. A method according to claim 3, wherein the carbon film is hydrogenated and comprises and hydrogen from the hydrocarbon gas.

5. A method according to claim 3, wherein the hydrocarbon gas comprises ethylene.

6. A method according to claim 4, wherein the hydrogenated carbon film has a substantially diamond-like structure.

7. A method according to claim 1, wherein the medium comprises multiple layers and step c) is carried out at a temperature which is relatively reduced from the temperature at which an underlying layer is deposited.

8. A method for sputtering a dielectric film onto a substrate, comprising the steps of:

a) providing alternating current power to side by side targets so that the targets alternately act as a sputtering cathode and as an anode in accordance with the frequency of the alternating current; and

b) moving the substrate past the targets under shielding conditions provided by an apertured baffle positioned between said targets that directs electrons between the targets to enhance the rate of sputtering of the film.

9. A method according to claim 8, comprising:

depositing a magnetic thin film recording layer onto the substrate; and

subsequently

sputtering, in an atmosphere comprising argon and a hydrocarbon gas, a hydrogenated carbon dielectric layer over the magnetic thin film recording layer, the carbon layer comprising carbon from carbon-containing targets and hydrogen from the hydrocarbon gas.

10. A method according to claim 9, wherein the dielectric film comprises carbon.

11. A method according to claim 9, wherein the substrate is moved past the targets in an environment comprising a hydrocarbon gas.

12. A sputtering apparatus, comprising:

a) a pair of magnetrons disposed within a sputtering chamber, the magnetrons having side-by-side targets and acting as a common sputtering area for the deposition of a film;

b) an alternating current power supply connected to the magnetrons so that each target in the pair alternately functions as a sputtering cathode and then as an anode according to the frequency of the alternating current; and

c) a shielding means between the magnetrons, the shielding means having apertures positioned to direct electrons to the anode as the targets alternate as a sputtering cathode and as the anode.

13. A sputtering apparatus according to claim 12, wherein the targets comprise a dielectric material.

14. A sputtering apparatus according to claim 13, wherein the dielectric material comprises carbon.

15. A sputtering apparatus according to claim 12, further comprising a source for introducing a gaseous hydrocarbon in the sputtering chamber.