Method of manufacturing a capacitance type acceleration sensor

• US 5,830,777 A
• Filed: 06/27/1996
• Issued: 11/03/1998
• Est. Priority Date: 10/31/1994
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Tokai RIKA Denki Seisakusho
• Original Assignee: Kabushiki Kaisha Tokai RIKA Denki Seisakusho
• Inventors: Ishida, Tatsuya, Imaeda, Yasuo
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US08/673,209
• Time in Patent Office: 859 Days
• Field of Search: 216/2, 216/17, 156/662.1, 437/228, 205/656, 438/50, 438/52, 438/753, 438/960
• US Class Current: 438/50
• CPC Class Codes: B60T 8/171 Detecting parameters used in the regulation; Measuring values used in the regulation
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: Y10S 438/96 Porous semiconductor

Abstract

A compact capacitance type acceleration sensor in which a mass portion having a plurality of movable electrodes are arranged in a recess portion formed on the surface of a p-type single crystal silicon base plate under the condition that the mass portion can be displaced. A plurality of stationary electrodes are arranged at a position opposed to the movable electrodes being separate from the movable electrodes. The mass portion is elastically supported by a support from the lower side and also elastically supported by four beams from the lateral side. Due to the above structure, the damping characteristic of the mass portion can be improved.

Claims

1. A method of manufacturing a capacitance type acceleration sensor including a p-type single crystal silicon base plate having an outer surface and a recess portion, a mass portion having an upper side, a lower side, and a lateral side, wherein the mass portion is movably arranged in said recess portion, a support for elastically supporting said mass portion from the lower side of said mass portion and a plurality of beams for elastically supporting said mass portion from the lateral side of said mass portion, said method comprising the steps of:

embedding and forming a first p-type silicon layer in said p-type single crystal silicon base plate;

forming a second p-type silicon layer for communicating said embedded first p-type silicon layer with the outer surface of said p-type single crystal silicon base plate;

conducting anode formation on said first and second p-type silicon layers so as to change both p-type silicon layers into a porous silicon layer; and

conducting alkali-etching so as to remove said porous silicon layer and form said recess portion at a position where said porous silicon layer is removed and further to form said mass portion, said support and said beams in said recess portion.

2. A method of manufacturing a capacitance type acceleration sensor including a p-type single crystal silicon base plate having an outer surface and a recess portion, a mass portion having an upper side, a lower side, and a lateral side, wherein the mass portion is movably arranged in said recess portion, a plurality of movable electrodes disposed on said mass portion, a plurality of stationary electrodes arranged so as to oppose said movable electrodes and being separate from said movable electrodes, a support for elastically supporting said mass portion from the lower side of said mass portion and a plurality of beams for elastically supporting said mass portion from the lateral side of said mass portion, comprising the steps of:

forming a first p-type silicon diffusion layer in a region on the surface of said p-type single crystal silicon base plate;

forming an n-type silicon layer so as to cover said p-type silicon diffusion layer and where the n-type silicon layer has an outer surface;

forming a second p-type silicon diffusion layer for communicating said embedded first p-type silicon diffusion layer with the outer surface of said n-type silicon layer;

conducting anode formation on said first and second p-type silicon diffusion layers so as to change both p-type silicon diffusion layers into a porous silicon layer;

forming said movable electrodes by physical film forming method on the surface of said p-type single crystal silicon base plate on which said n-type silicon is formed;

conducting alkali-etching so as to remove said porous silicon layer and form said recess portion at a position where said porous silicon layer is removed and further to form said mass portion, said support and said beam in said recess portion; and

conducting anode-junction so as to join a glass base plate on which said stationary electrodes are formed, to the surface of said p-type single crystal base plate.

3. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of forming said first p-type silicon diffusion layer comprises the steps of:

forming a first oxide film on both sides of said p-type single crystal silicon base plate;

conducting photo-etching so as to form a first opening on said first oxide film;

driving boron into said first opening by means of ion injection;

thermally diffusing said driven boron; and

removing said first oxide film by means of etching.

4. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of forming said n-type silicon layer comprises the steps of:

forming an n-type silicon epitaxial growth layer by means of gas phase growth on the surface of said p-type single crystal silicon base plate on which said p-type silicon diffusion layer is formed.

5. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of forming said second p-type silicon diffusion layer comprises the steps of:

forming a second oxide film on both sides of said p-type single crystal silicon base plate on which said n-type silicon layer is formed;

conducting photo-etching so as to form a second opening on said second oxide film;

driving boron into said second opening by means of ion injection;

thermally diffusing said driven boron; and

removing said second oxide film by means of etching.

6. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of conducting anode formation comprises the steps of:

dipping said p-type single crystal silicon base plate in an aqueous solution of hydrofluoric acid of high concentration; and

making an electric current to flow while said p-type single crystal silicon base plate is used as an anode.

7. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said movable electrodes are formed by means of one of sputtering and vapor-deposition.

8. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of removing said porous silicon layer comprising the steps of:

covering the overall surface of said p-type single crystal silicon base plate with an etching resist except for the portion wherein said second opening is located; and

conducting alkali-etching so as to etch said porous silicon layer.

9. The method of manufacturing said capacitance type acceleration sensor according to claim 2, wherein said step of joining said glass base plate comprises the steps of:

opposing said glass base plate onto the surface of said p-type single crystal silicon base plate, said stationary electrodes being formed in said glass plate; and

impressing a voltage of approximate 500V at a temperature of 300°

to 400°

C.

10. The method of manufacturing said capacitance type acceleration sensor according to claim 3, wherein a non-opening portion is left inside said first opening at the step of conducting photo-etching so as to form said first opening on said first oxide film.

11. The method of manufacturing said capacitance type acceleration sensor according to claim 6, further comprising the steps of:

forming a third oxide film on both sides of said p-type single crystal silicon base plate after conducting anode formation;

conducting photo-etching so as to form a pattern of said beams on said third oxide film;

coating a photo-resist on an upper surface of said p-type single crystal silicon base plate on which said third oxide film is formed; and

exposing to light and developing said photo-resist.