Microelectronic element bonding with deformation of leads in rows

• US 5,830,782 A
• Filed: 07/12/1996
• Issued: 11/03/1998
• Est. Priority Date: 07/07/1994
• Status: Expired due to Term

• Current Assignee: Tessera, Inc. (Adeia Inc.)
• Original Assignee: Tessera, Inc. (Adeia Inc.)
• Inventors: Smith, John W., Distefano, Thomas H.
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Turner, Kevin F.
• Application Number:
  US08/678,808
• Time in Patent Office: 844 Days
• Field of Search: 437/214, 437/217, 437/220, 257/666, 257/674, 257/673, 438/123, 438/125
• US Class Current: 438/123
• CPC Class Codes: H01L 21/4839 Assembly of a flat lead with an insulating support, e.g. for TAB
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13016 in side view
• CPC Class Codes: H01L 2224/13018 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13026 relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13582 Two-layer coating
• CPC Class Codes: H01L 2224/13611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13617 the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
• CPC Class Codes: H01L 2224/13638 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/13644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/1412 Layout
• CPC Class Codes: H01L 2224/16057 in side view
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/17104 : relative to the bonding areas, e.g. bond pads
• CPC Class Codes: H01L 2224/29191 : The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/7525 : Means for applying energy, e.g. heating means
• CPC Class Codes: H01L 2224/753 : by means of pressure
• CPC Class Codes: H01L 2224/75701 : in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75702 : in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75744 : in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75745 : in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75802 : Rotational mechanism
• CPC Class Codes: H01L 2224/75804 : Translational mechanism
• CPC Class Codes: H01L 2224/75822 : Rotational mechanism
• CPC Class Codes: H01L 2224/75824 : Translational mechanism
• CPC Class Codes: H01L 2224/81007 : involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
• CPC Class Codes: H01L 2224/81091 : Under pressure
• CPC Class Codes: H01L 2224/8113 : using marks formed on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81132 : using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
• CPC Class Codes: H01L 2224/81192 : wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81207 : Thermosonic bonding
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81457 : Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/81464 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/81469 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/81825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8183 : Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/819 : with the bump connector not providing any mechanical bonding
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83855 : Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/95001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/22 : liquid at the normal operating temperature of the device
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/4985 : Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 23/642 : Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15174 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H05K 1/118 : specially for flexible printed circuits, e.g. using folded portions
• CPC Class Codes: H05K 2201/0133 : Elastomeric or compliant polymer elastomeric conductor H05K2201/0314
• CPC Class Codes: H05K 2201/0394 : Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
• CPC Class Codes: H05K 2201/0397 : Tab forming integral conductive tabs H05K3/4092
• CPC Class Codes: H05K 2201/09081 : Tongue or tail integrated in planar structure, e.g. obtained by cutting from the planar structure
• CPC Class Codes: H05K 2201/091 : Locally and permanently deformed areas including dielectric material
• CPC Class Codes: H05K 2203/063 : of preperforated insulating layer
• CPC Class Codes: H05K 3/361 : Assembling flexible printed circuits with other printed circuits
• CPC Class Codes: H05K 3/4084 : by deforming at least one of the conductive layers

Abstract

A method of making a microelectronic assembly includes bonding a plurality of lead connection sections arranged in a row to contacts of a microelectronic element such as a semiconductor chip having contacts in rows at the periphery of the chip. The leads have terminal sections secured to a dielectric support structure, and horizontally curved sections between the terminal regions and bond regions. After bonding, the dielectric support structure is lifted upwardly relative to the chip, so as to bend the leads into a vertically-extensive orientation. Partial straightening of the original horizontal curvature allows each lead to stretch and accommodate the vertical movement.

Claims

1. A method of making one or more microelectronic assemblies comprising the steps of:

(a) providing one or more microelectronic element each having a front surface and a plurality of contacts on said front surface, and providing one or more connection components each including a support structure having major surfaces defining top and bottom horizontal planes, terminals on said support structure and leads extending across said support structure from said terminals, each said lead having a terminal region secured to said support structure and connected to said terminal, a bond region and a horizontally-curved portion disposed between the bond region and the terminal region of the lead, the bond regions of the leads being disposed in one or more rows;

(b) juxtaposing each said connection component with a microelectronic element having contacts disposed in rows, so that the bond regions of the leads of each connection component overlie the contacts on the front surface of the associated microelectronic element;

(c) bonding the bond regions of the leads to the contacts; and

(d) moving the support structure of each connection component upwardly relative to the associated microelectronic element so as to bend the leads to a formed configuration in which each lead extends upwardly away from the microelectronic element.

2. A method as claimed in claim 1 further comprising the step of supporting the bond regions of the leads prior to and during the bonding step.

3. A method as claimed in claim 1 wherein each said lead is detachably secured to the support structure at or adjacent the bond region of the lead, such detachable securement being detached during said upward movement step.

4. A method as claimed in claim 1 wherein each said microelectronic element has plural rows of contacts extending adjacent the periphery of its front surface, and wherein said juxtaposing step includes the step of aligning at least some of said terminals with a central region of the front surface.

5. A method as claimed in claim 1 wherein said juxtaposing step includes the step of juxtaposing a microelectronic element assembly incorporating a plurality of said microelectronic elements with an assembly article including a plurality of said connection components so as to simultaneously align the bond regions of rows of leads on all of the connection components with rows of contacts on all of the microelectronic elements.

6. A method as claimed in claim 5 wherein said moving step includes the step of moving the support structures of all of said connection components in said assembly article simultaneously relative to all of said microelectronic elements.

7. A method as claimed in claim 6 wherein said microelectronic element assembly is a semiconductor wafer including a plurality of semiconductor chips, the method further comprising the step of severing said wafer and said assembly article after said moving step to thereby form a plurality of units, each said unit including one said chip and one said connection component.

8. A method as claimed in claim 6 wherein said assembly article includes a unitary sheet, said support structures being portions of said unitary sheet.

9. A method as claimed in claim 1 further comprising the step of injecting a curable liquid between each said microelectronic element and the support structure of the associated connection component, and curing said liquid to form a compliant layer.

10. A method as claimed in claim 1 wherein the curved portion of each lead is originally curved in one or more horizontal offset directions transverse to the lengthwise direction of the lead, and wherein such curvature is at least partially straightened during said moving step.

11. A method as claimed in claim 10 wherein the original curvature of each said lead in said horizontal offset directions is only partially straightened during said moving step.

12. A method of making one or more microelectronic assemblies comprising the steps of:

(a) providing one or more microelectronic elements each having a front surface and a plurality of contacts on said front surface and providing one or more connection components each including a support structure comprising a sheet having major surfaces extending in top and bottom horizontal planes, terminals on said sheet and leads extending across said sheet from said terminals, each said lead having a horizontally-curved portion and having an exposed section extending beyond said sheet;

(b) juxtaposing one said connection component with each said microelectronic element so that the exposed sections of the leads of each connection component overlie the contacts on the front surface of the associated microelectronic element;

(c) bonding the exposed sections of the leads to the contacts; and

(d) moving the support structure of each component upwardly away from the associated microelectronic element so as to bend the leads to a formed configuration in which each lead extends upwardly away from the microelectronic element.

13. A method as claimed in claim 12 wherein said exposed section of each lead includes the curved section of the lead, said bonding step including the step of bonding each said curved section to a contact of the connection component at a location remote from the associated support structure.

14. A method as claimed in claim 12 wherein each said lead is substantially horizontal prior to said moving step.

15. A method as claimed in claim 14 wherein each said lead extends along a bottom surface of the support structure, said juxtaposing step being performed so as to place the bottom surface of the support structure facing toward the front surface of the microelectronic element, so that each said lead closely overlies the associated contact prior to said bonding and moving steps.

16. A method as claimed in claim 12 wherein each said microelectronic element has said contacts in rows, said exposed sections also being disposed in rows, said juxtaposing step including the step of aligning one row of exposed lead sections with each row of exposed contacts.

17. A method as claimed in claim 16 wherein the support structure of each said connection component defines at least one elongated slot, a row of the exposed sections of the leads extending across each said slot, one said slot being aligned with each row of said contacts in said juxtaposing step.

18. A method as claimed in claim 12 wherein said step of providing said one or more microelectronic elements includes the step of providing a chip assembly including a plurality of chips, each chip having contacts on front surfaces, the front surfaces of said chips being substantially coplanar, said step of providing said connection components including the step of providing a plurality of said connection components in a single sheet, said juxtaposing step including the step of juxtaposing said single sheet with said chip assembly to simultaneously juxtapose all of said connection components with all of said chips.

19. A method as claimed in claim 18 further comprising the steps of severing said single sheet and disassembling said chip assembly to form a plurality of units each including one chip and the associated connection component.

20. A method as claimed in claim 12 wherein said moving step includes the step of introducing a fluid under pressure between each microelectronic element and the support structure of the associated connection component.

21. A method as claimed in claim 12 further comprising the steps of introducing an uncured compliant material between each microelectronic element and the support structure of the associated connection component after said moving step and curing the material to form a compliant layer between the front surface of each microelectronic element and the support structure of the associated connection component.