Direct multilevel thin-film transistors production method
First Claim
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1. A method for making direct multilevel thin-film transistors with three mask levels, comprising the steps of:
- depositing and etching a first conducting level on an insulating substrate to form a source and a drain,depositing during the same step a semiconductor level followed by an insulator level and etching of the assembly joining source and drain,oxidizing, nitriding or passivating of edges of the semiconductor level, anddepositing and etching a conducting level to form the transistor gate.
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Abstract
The present invention can be used to make integrated circuits on the same substrate as the active matrix owing to the possibility that it offers of connecting transistor gates to sources or drains of the same or other transistors, and thus be used in a "integrated drivers" technology. It is also possible to make different types of transistors and capacitances using this method, without adding any additional mask levels.
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Citations
13 Claims
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1. A method for making direct multilevel thin-film transistors with three mask levels, comprising the steps of:
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depositing and etching a first conducting level on an insulating substrate to form a source and a drain, depositing during the same step a semiconductor level followed by an insulator level and etching of the assembly joining source and drain, oxidizing, nitriding or passivating of edges of the semiconductor level, and depositing and etching a conducting level to form the transistor gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification