Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure

• US 5,831,266 A
• Filed: 09/12/1996
• Issued: 11/03/1998
• Est. Priority Date: 09/12/1996
• Status: Expired due to Term

• Current Assignee: Institut national d'optique
• Original Assignee: Institut national d'optique
• Inventors: Renaud, Martin, Jerominek, Hubert, Swart, Nicholas R.
• Primary Examiner(s): Tokar, Michael J.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US08/713,147
• Time in Patent Office: 782 Days
• Field of Search: 250/338.4, 250/338.1, 250/370.01, 250/338.2, 257/684
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The microbridge structure is for emitting or detecting radiations. According to one embodiment, it comprises a substrate layer provided with two first electrical contacts, and a microstructure provided with two second electrical contacts and having an underside, a top side opposite to the underside, through which radiations are emitted or received, at least one radiation active layer lying between the underside and the top side, the radiation active layer having two distal points connected respectively to the two second electrical contacts of the microstructure, and a radiation reflective layer lying between the underside and the radiation active layer. It also comprises a micro support for suspending the microstructure over and at a predetermined distance from the substrate layer with the underside of the microstructure facing the substrate layer. The micro support is provided with at least two electrically conductive paths for connecting respectively the two first electrical contacts to two second electrical contacts. The present invention is also concerned with methods for forming microbridge structures.

Claims

1. A microbridge structure for emitting or detecting radiations, comprising:

a substrate layer provided with two first electrical contacts;

a microstructure provided with two second electrical contacts and having;

an underside,

a top side opposite to the underside, through which radiations are emitted or received,

at least one radiation active layer lying between the underside and the top side, the radiation active layer having two distal points connected respectively to the two second electrical contacts of the microstructure, and

a radiation reflective layer lying between the underside and the radiation active layer; and

a micro support for suspending the microstructure over and at a predetermined distance from the substrate layer with the underside of the microstructure facing the substrate layer, the micro support being provided with at least two electrically conductive paths for connecting respectively the two first electrical contacts to the two second electrical contacts.

2. A microbridge structure according to claim 1, wherein the radiation active layer is responsive to temperature changes caused by absorbed infrared radiations.

3. A microbridge structure according to claim 1, wherein:

the microstructure further comprises upper and lower dielectric layers, the upper dielectric layer lying over the radiation active layer, and the lower dielectric layer lying between the radiation active layer and the radiation reflective layer; and

the microstructure further comprises an underside dielectric layer, the underside dielectric layer lying between the underside of the microstructure and the radiation reflective layer, whereby the radiation reflective layer is embedded between the lower dielectric layer and the underside dielectric layer.

4. A microbridge structure according to claim 1, wherein the reflective layer is made of a material selected from the group consisting of Au, Al, Pt and TiN.

5. A microbridge structure according to claim 3, wherein:

the radiation active layer is made of a material exhibiting a substantially high temperature coefficient of resistivity;

the radiation active layer has a thickness of substantially 0.1 to 0.5 μ

m, and a surface dimension of about 50 μ

m by 50 μ

m;

the dielectric layers are made of a material selected from the group consisting of Si₃ N₄ and SiO₂ ; and

the dielectric layers each has a thickness of substantially 0.1 to a few μ

ms.

6. A microbridge structure according to claim 5, wherein the material exhibiting a substantially high temperature coefficient of resistivity is selected from the group consisting of VO₂, V₂ O₃ and a-Si, whereby the microbridge structure forms an uncooled infrared bolometric detector.

7. A microbridge structure according to claim 1, wherein the micro support has two legs each extending along a vertical axis, each of the legs having a central upper cavity extending along the vertical axis within the leg, each of the legs having a lower end connected to the substrate layer and an upper end connected to the microstructure for supporting the microstructure with respect to the substrate layer, each of the legs is a multilayer leg comprising first and second layers of electrically conductive material, the first layer of each of the legs extending from the upper end to the lower end thereof and connecting one of the two second electrical contacts of the microstructure to one of the two first electrical contacts of the substrate layer via the second layer.

8. A microbridge structure according to claim 7, wherein each of the legs also comprises a third layer of dielectric material which covers the first and second layer.

9. A microbridge structure according to claim 7, wherein the first and second layers are made of a material selected from the group consisting of Au, Ti, W, Al and V.

10. A microbridge structure according to claim 7, wherein the first and second layers each has a typical thickness of less than 1 μ

m.

11. A microbridge structure according to claim 7, wherein each of the legs has substantially the shape of an upside down hollow truncated pyramid.

12. A microbridge structure according to claim 7, wherein each of the legs has an upper portion made of upper parts of the layers and shaped as a collar with a width of substantially 1 to 2 μ

ms.

13. A microbridge structure according to claim 1, wherein the radiation reflective layer has a thickness of substantially a fraction of 1 μ

m.

14. A microbridge structure according to claim 1, wherein the radiation active layer is for emitting infrared radiations.

15. A microbridge structure according to claim 14, wherein the radiation active layer is made of a material selected from the group consisting of polysilicon, graphite, titanium oxides, tantalum oxides, silicon oxides, cermets, nichrome and TiN.

16. A microbridge structure according to claim 1, wherein:

the substrate layer is provided with a hollow area above which the microstructure is suspended; and

the micro support has two arms for supporting the microstructure over the hollow area, each of the arms having a first end connected to the substrate layer and a second end connected to the microstructure, each of the arms comprising a first layer of electrically conductive material and a second layer of dielectric material, the layers of each arm extending along the length thereof, the first layers providing two electrical paths from the two distal points of the radiation active layer to the two first electrical contacts of the substrate layer.

17. A microbridge structure according to claim 16, wherein each of the arms also comprises a third layer of dielectric material which, in combination with the second layer, embeds the first layer except for extremities thereof where openings are provided for one of the two electrical paths to one of the two distal points of the radiation active layer and to one of the electrical contacts of the substrate layer.

18. A method for forming a microbridge structure comprising a microstructure and a micro support for suspending the microstructure, the microstructure being for emitting or detecting radiations, the method comprising the steps of:

(a) providing a substrate layer with electrical contacts;

(b) covering the substrate layer with a temporary layer, and patterning and etching cavities in the temporary layer to provide accesses to the electrical contacts of the substrate layer, the cavities being also for containing legs of the micro support, each of the cavities extending along a vertical axis, each of the cavities having a lower end opened out onto the electrical contacts of the substrate layer;

(c) covering the layers of previous steps (a) and (b) with a radiation reflective layer;

(d) patterning and etching the radiation reflective layer;

(e) covering the layers of previous steps (a) to (d) with a first dielectric layer;

(f) patterning and etching the first dielectric layer to provide accesses to the electrical contacts of the substrate layer;

(g) covering the layers of previous steps (a) to (f) with a first electrically conductive layer;

(h) patterning and etching the electrically conductive layer so that the electrically conductive layer forms a part of the micro support and provides an electrical path to the electrical contacts of the substrate layer;

(i) covering the layers of previous steps (a) to (h) with a radiation active layer;

(j) patterning and etching the radiation active layer to define an active area for emitting or detecting radiations;

(k) covering the layers of previous steps (a) to (j) with a second electrically conductive layer, and patterning and etching the second electrically conductive layer so that said second electrically conductive layer provides two electrical paths from two distal points of the radiation active layer to the electrical contacts of the substrate layer through the first electrically conductive layer;

(l) patterning and etching the first dielectric layer down to the temporary layer;

(m) removing the temporary layer to reveal the microstructure which comprises a radiation reflective layer and the radiation active layer, and which is suspended by means of the micro support.

19. A method according to claim 18, wherein:

the step (b) further comprises, after the patterning and etching of the temporary layer, a step of covering the layers of steps (a) and (b) with a second dielectric layer;

the step (f) further comprises a step of patterning and etching also the second dielectric layer to provide accesses to the electrical contacts of the substrate layer, and to embed, in combination with the first dielectric layer, the radiation reflective layer;

the step (k) further comprises, after the patterning and etching of the second electrically conductive layer, a step of covering the layers of the steps (a) to (k) with a third dielectric layer to cover the second electrically conductive layer and the radiation active layer; and

the step (l) further comprises a step of patterning and etching the second and third dielectric layers down to the temporary layer.

20. A method for forming a microbridge structure comprising a microstructure and a micro support for suspending the microstructure, the microstructure being for emitting or detecting radiations, the method comprising the steps of:

(a) providing a substrate layer provided with electrical contacts;

(b) covering the substrate layer with a first dielectric layer;

(c) covering the layers of previous steps (a) and (b) with a radiation reflective layer;

(d) patterning and etching the radiation reflective layer;

(e) covering the layers of previous steps (a) to (d) with a second dielectric layer to embed the radiation reflective layer within the first and second dielectric layers;

(f) covering the layers of previous steps (a) to (e) with a radiation active layer;

(g) patterning and etching the radiation active layer to define an active area for emitting or detecting radiations;

(h) covering the layers of previous steps (a) to (g) with a first electrically conductive layer;

(i) patterning and etching the first electrically conductive layer so that said first electrically conductive layer provides two electrical paths from two distal points of the radiation active layer;

(j) patterning and etching of the first and the second dielectric layers down to the electrical contacts of the substrate layer;

(k) covering the layers of previous steps (a) to (j) with a second electrically conductive layer, and patterning and etching the second electrically conductive layer so that said second electrically conductive layer provides electrical paths from the electrical contacts of the substrate layer to the radiation active layer through the two electrical paths provided in the step (i);

(l) patterning and etching the first and second dielectric layers down to the substrate layer; and

(m) etching the substrate layer to reveal the microstructure which comprises the radiation active layer and the radiation reflective layer and which is suspended by means of the micro support.

21. A method according to claim 20, wherein:

the step (k) further comprises, after the patterning and etching the second electrically conductive layer, a step of covering the layers of steps (a) to (k) with a third dielectric layer to cover the first and second electrically conductive layers and the radiation active layer; and

the step (l) further comprises a step of patterning and etching the third dielectric layer down to the substrate layer.