Self-shielding inductor for multi-layer semiconductor integrated circuits
First Claim
1. A self-shielding inductor for a semiconductor integrated circuit, comprising:
- a plurality of electrically insulating layers; and
an electrical conductor disposed in a plurality of electrically coupled turns, the turns disposed between the insulating layers of the semiconductor integrated circuit and including a first turn disposed between a first insulating layer and a second insulating layer, and others of the plurality of turns disposed between other ones of the insulating layers, the first turn being nearer a ground plane of the integrated circuit than the other turns.
2 Assignments
0 Petitions
Accused Products
Abstract
An inductive structure for an integrated circuit. The inductor has a first turn that shields the other turns of the inductor from a proximate ground plane. Multiple turns are disposed one above another in respective metalization layers of the integrated circuit. The turns are partial loops and are electrically coupled end-to-end with vias. Predetermined ones of the turns have additional portions in different layers. An additional portion of a turn is an electrically conductive strip deposited above the turn in a higher metalization layer and electrically coupled to the turn, thereby increasing the surface area of the turn and decreasing resistance of the turn. A buried n-type loop disposed below the first turn and below the surface of the substrate shields the first turn from the capacitive effects of the substrate.
182 Citations
21 Claims
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1. A self-shielding inductor for a semiconductor integrated circuit, comprising:
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a plurality of electrically insulating layers; and an electrical conductor disposed in a plurality of electrically coupled turns, the turns disposed between the insulating layers of the semiconductor integrated circuit and including a first turn disposed between a first insulating layer and a second insulating layer, and others of the plurality of turns disposed between other ones of the insulating layers, the first turn being nearer a ground plane of the integrated circuit than the other turns. - View Dependent Claims (2, 3, 4)
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5. A self-shielding inductor for a semiconductor integrated circuit, comprising:
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a substrate having opposed first and second surfaces, the first surface disposed against a ground plane; an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end; an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn; an electrical conductor disposed on the first insulating layer in a second turn and having a first end and a second end, the first end electrically coupled to the second end of the first turn; an second electrically insulating layer disposed on the first insulating layer and covering the second turn; and an electrical conductor disposed on the second insulating layer in a third turn, the third turn having a first end and a second end electrically coupled to the second end of the second turn. - View Dependent Claims (6, 7, 8)
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9. A self-shielding inductor with resistance equalization for a semiconductor integrated circuit, comprising:
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a plurality of electrically insulating layers; an electrical conductor disposed in a plurality of electrically coupled turns, the turns disposed between the insulating layers of the semiconductor integrated circuit and including a first turn disposed between a first insulating layer and a second insulating layer, and others of the plurality of turns disposed between other ones of the insulating layers, the first turn being nearer a ground plane of the integrated circuit than the other turns; and an electrical conductor disposed on the second insulating layer and electrically coupled to the first turn as a first additional layer of the first turn. - View Dependent Claims (10, 11, 12)
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13. A self-shielding inductor with resistance equalization for a semiconductor integrated circuit, comprising:
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a substrate having opposed first and second surfaces, the first surface disposed against a ground plane; an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end; an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn; an electrical conductor disposed on the first insulating layer and electrically coupled to the second end of the first turn as a first additional layer of the first turn; an electrical conductor disposed on the first insulating layer in a second turn and having a first end and a second end, the first end electrically coupled to the second end of the first turn; an second electrically insulating layer disposed on the first insulating layer and covering the first additional layer of the first turn and the second turn; and an electrical conductor disposed on the second insulating layer in a third turn, the third turn having a first end and a second end electrically coupled to the second end of the second turn. - View Dependent Claims (14, 15, 16, 17)
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18. A self-shielding inductor for a semiconductor integrated circuit, comprising:
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a substrate having opposed first and second surfaces, the first surface disposed against a ground plane; an electrical conductor disposed on the second surface of the substrate in a first turn, the first turn having a first end and a second end; an first electrically insulating layer disposed on the second surface of the substrate and covering the first turn; and an electrical conductor disposed in a first spiral on the first insulating layer and having a first end and a second end, the first end electrically coupled to the second end of the first turn. - View Dependent Claims (19, 20, 21)
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Specification