Address strobe recognition in a memory device

• US 5,831,931 A
• Filed: 07/09/1997
• Issued: 11/03/1998
• Est. Priority Date: 11/06/1995
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Manning, Troy
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Ho, Hoai V.
• Application Number:
  US08/890,418
• Time in Patent Office: 482 Days
• Field of Search: 365/233.5, 365/236, 365/239, 365/230.08
• US Class Current: 365/233.5
• CPC Class Codes: G11C 11/407 for memory cells of the field-effect type
• CPC Class Codes: G11C 7/1024 Extended data output [EDO] mode, i.e. keeping output buffer enabled during an extended period of time
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management

Abstract

An integrated memory circuit is described which can be operated in a burst access mode. The memory circuit includes an address counter which changes column addresses in one of a number of predetermined patterns. The memory includes generator circuit for generating an internal control signal based upon external column address signals. The generator circuit detects the first active transition of the column address signals and the first inactive transition of the column address signals.

Claims

1. A memory device comprising:

a plurality of column address strobe signals; and

means for providing a signal based upon the plurality of column address strobe signals such that the signal transitions to a low logic state in response to one of the plurality of column address strobe signals which transitions to a low logic state first, and the signal transitions to a high logic state in response to one of the plurality of column address strobe signals which transitions to a high logic state first.

2. The memory of claim 1 wherein the means for providing the signal comprise:

an enable circuit; and

a plurality of trigger circuits.

3. The memory of claim 2 wherein the plurality of trigger circuits each comprise cross-coupled NAND gates.

4. A memory device comprising:

a column address strobe signal detection circuit comprising;

a first input coupled to a first column address strobe signal;

a second input coupled to a second column address strobe signal;

an output for providing an internal composite column address strobe signal;

a first latch having first and second inputs;

the first input coupled to the first CAS signal;

a second latch having first and second inputs;

the first input coupled to the second CAS signal;

a first NAND gate having first and second inputs coupled to the first and second CAS signals and an output coupled to the second inputs of both the first and second latches;

a second NAND gate having first and second inputs coupled to the outputs of the first and second latches, and an output coupled to enable a third NAND gate; and

the third NAND gate having first and second inputs coupled to the first and second CAS signals, and an output coupled to the output of the column address strobe signal detection circuit.

5. The memory device of claim 4 further comprising:

an enable circuit coupled to the first and second inputs of the column address strobe signal detection circuit to decouple the first and second inputs from the first and second CAS signals, and couple a third CAS signal to a third input of the third NAND gate.