Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication

• US 5,831,960 A
• Filed: 07/17/1997
• Issued: 11/03/1998
• Est. Priority Date: 07/17/1997
• Status: Expired due to Term

• Current Assignee: Google Technology Holdings LLC (Alphabet Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Jiang, Wenbin, Claisse, Paul, Lebby, Michael S.
• Primary Examiner(s): Swann, Tod R.
• Assistant Examiner(s): CHU, KIM KWOK
• Application Number:
  US08/895,779
• Time in Patent Office: 474 Days
• Field of Search: 369/121, 369/122, 372/45, 372/96, 372/43, 372/46, 372/99, 372/94
• US Class Current: 369/121
• CPC Class Codes: G11B 7/127 Lasers; Multiple laser arrays lasers per se H01S
• CPC Class Codes: H01S 5/18344 characterized by the mesa, e.g. dimensions or shape of the mesa
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

An integrated vertical cavity surface emitting laser (VCSEL) pair for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL pair includes a high power VCSEL capable of emitting a power output of at least 15 mW and a low power VCSEL capable of emitting a power output in a range of 1-4 mW. A phase shift mask is integrated with the high power VCSEL to allow for a 180° shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The low power VCSEL emission is focused into a Gaussian beam profile for data read applications. The integrated VCSEL pair is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Claims

1. An integrated vertical cavity surface emitting laser pair comprising:

a high power vertical cavity surface emitting laser fabricated on a substrate element; and

a low power vertical cavity surface emitting laser fabricated on the substrate element and monolithically integrated with the high power vertical cavity surface emitting laser.

2. An integrated vertical cavity surface emitting laser pair as claimed in claim 1 wherein the high power vertical cavity surface emitting laser operates at a power of at least 15 mW.

3. An integrated vertical cavity surface emitting laser pair as claimed in claim 2 wherein the low power vertical cavity surface emitting laser operates in a power range of 1-4 mW.

4. An integrated vertical cavity surface emitting laser pair as claimed in claim 3 wherein the high power vertical cavity surface emitting laser emits a multimode light having a higher order Hermite-Gaussian beam profile that is focused into a spot with a central lobe smaller than a Fourier transform limited spot.

5. An integrated vertical cavity surface emitting laser pair as claimed in claim 4 wherein the low power vertical cavity surface emitting laser emits a single mode light having a Gaussian beam profile that is focused into a Fourier transform limited spot of approximately one micron in diameter.

6. An integrated vertical cavity surface emitting laser pair as claimed in claim 5 wherein the substrate element is a GaAs substrate element.

7. An integrated vertical cavity surface emitting laser pair as claimed in claim 6 wherein the substrate element has formed thereon an uppermost surface, a first DBR (distributed Bragg reflectors) mirror stack.

8. An integrated vertical cavity surface emitting laser pair as claimed in claim 7 wherein the first DBR mirror stack includes alternating layers of an AlAs material and an AlGaAs material.

9. An integrated vertical cavity surface emitting laser pair as claimed in claim 7 wherein the high power vertical cavity surface emitting laser includes an active region disposed on the first DBR mirror stack, and the low power vertical cavity surface emitting laser includes an active region disposed on the first DBR mirror stack.

10. An integrated vertical cavity surface emitting laser pair as claimed in claim 9 wherein the high power vertical cavity surface emitting laser includes a second DBR mirror stack disposed on the active region and the low power vertical cavity surface emitting laser includes a second DBR mirror stack disposed on the active region.

11. An integrated vertical cavity surface emitting laser pair as claimed in claim 10 wherein the active region and the first and second DBR mirror stacks of the high power vertical cavity surface emitting laser and the low power vertical cavity surface emitting laser are configured to emit light with a wavelength in a range of approximately 630 to 780 nm.

12. An integrated vertical cavity surface emitting laser pair comprising:

a high power multimode vertical cavity surface emitting laser generating an emission along a path; and

a low power single mode vertical cavity surface emitting laser, monolithically integrated with the high power vertical cavity surface emitting laser and generating an emission along a path.

13. An integrated vertical cavity surface emitting laser pair as claimed in claim 12 wherein the high power multimode vertical cavity surface emitting laser and the low power single mode vertical cavity surface emitting laser are fabricated on a common substrate element having a surface.

14. An integrated vertical cavity surface emitting laser pair as claimed in claim 13 wherein the high power multimode vertical cavity surface emitting laser and the low power single mode vertical cavity surface emitting laser further share a portion of a first DBR (distributed Bragg reflector) mirror stack disposed on the surface of the common substrate element.

15. An integrated vertical cavity surface emitting laser pair as claimed in claim 14 wherein the high power multimode vertical cavity surface emitting laser further includes an active region disposed on a surface of the first DBR mirror stack, a second DBR mirror stack disposed on a surface of the active region, and a phase shift mask disposed on a surface of the second DBR mirror stack.

16. An integrated vertical cavity surface emitting laser pair as claimed in claim 15 wherein the phase shift mask is characterized as shifting the phase of light passing therethrough one-half wavelength.

17. An integrated vertical cavity surface emitting laser pair as claimed in claim 16 wherein the phase shift mask is formed from at least one of a silicon nitride material, a silicon dioxide material, and a dielectric material in combination with an organic material.

18. An integrated vertical cavity surface emitting laser pair as claimed in claim 17 wherein the low power single mode vertical cavity surface emitting laser further includes an active region disposed on a surface of the first DBR mirror stack, and a second DBR mirror stack disposed on a surface of the active region.

19. An integrated vertical cavity surface emitting laser as claimed in claim 18 wherein the low power single mode vertical cavity surface emitting laser is configured to operate at a power level in a range of 1-4 mW and the high power multimode vertical cavity surface emitting laser is configured to operate at a power level of at least 15 mW.

20. An integrated vertical cavity surface emitting laser as claimed in claim 19 wherein the path of emission of the high power multimode vertical cavity surface emitting laser and the path of emission of the low power single mode vertical cavity surface emitting laser are spaced apart approximately 100 microns or less.

21. A method of fabricating an integrated vertical cavity surface emitting laser pair including the steps of:

providing a substrate having formed thereon a first mirror stack;

disposing an active region and a second mirror stack on the first mirror stack;

selectively etching through the second mirror stack, the active region and a portion of the first mirror stack thereby defining a high power vertical cavity surface emitting laser emitting light along a path and a low power vertical cavity surface emitting laser emitting light along a path separated by a defined space; and

disposing on a surface of the second mirror stack of the high power vertical cavity surface emitting laser, a one-half wavelength phase shift mask.

22. A method of fabricating an integrated vertical cavity surface emitting laser pair as claimed in claim 21 wherein the first mirror stack, the active region and the second mirror stack of each of the high power vertical cavity surface emitting laser and the low power vertical cavity surface emitting laser are configured to emit light with a wavelength in a range of approximately 630 to 780 nm.

23. A method of fabricating an integrated vertical cavity surface emitting laser pair as claimed in claim 22 wherein the high power vertical cavity surface emitting laser operates in a donut mode at a power level of at least 15 mW.

24. A method of fabricating an integrated vertical cavity surface emitting laser pair as claimed in claim 23 wherein the low power vertical cavity surface emitting laser operates in a single mode at a power level in a range of 1-4 mW.

25. A method of fabricating an integrated vertical cavity surface emitting laser pair as claimed in claim 24 further including the step of focusing the light emitted by the high power vertical cavity surface emitting laser into a spot with a central lobe smaller than a Fourier transform limited spot.

26. A method of fabricating an integrated vertical cavity surface emitting laser pair as claimed in claim 25 further including the step of focusing the light emitted by the low power vertical cavity surface emitting laser into a one micron in diameter Fourier transform limited spot.