Method for forming a thin film transistor

• US 5,834,071 A
• Filed: 02/11/1997
• Issued: 11/10/1998
• Est. Priority Date: 02/11/1997
• Status: Expired due to Term

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Lin, Kang-Cheng
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/802,344
• Time in Patent Office: 637 Days
• Field of Search: 427/574, 427/578, 427/255.7, 427/554, 427/555, 427/527, 438/160, 438/161, 438/162, 438/166, 438/488
• US Class Current: 427/578
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02496 Layer structure
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device includes forming the gate electrode on a substrate and depositing a dielectric layer on the substrate and the conductive layer. Then a first layer (microcrystalline silicon:μc-Si) is formed on the dielectric layer and a second layer (hydrogenated amorphous silicon:a-Si:H) is deposited on the first layer. Noted that the polycrystalline silicon (poly-Si) can be fabricated by applying the laser annealing to the first layer and the second layer to transform them to poly-Si. Annealing the first layer and the second layer by laser, followed by fabricating the source and drain electrodes, thus the TFT with good electrical characteristics is fabricated.

Claims

1. Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device, said method comprising:

forming a conductive layer on a substrate;

forming a dielectric layer on said substrate and said conductive layer;

forming a first layer on said dielectric layer;

forming a second layer on said first layer;

patterning a photoresist layer on said second layer;

defining a plurality of doped regions in said first layer and said second layer;

annealing said first layer and said second layer by a laser, thereby said first layer and said second layer are transformed to a polycrystalline silicon (poly-Si) layer;

patterning a channel region by etching portions of said poly-Si layer;

defining source and drain region in said poly-Si layer;

forming a source electrode and a drain electrode of said semiconductor device; and

forming a passivation layer on said source electrode, said drain electrode, said channel region and said dielectric layer.

2. The method as claim 1, wherein said conductive layer comprises metal.

3. The method as claim 2, wherein said metal is chromium (Cr).

4. The method as claim 1, wherein said dielectric layer comprises a-SiO_x :

H (hydrogenated amorphous silicon oxide).

5. The method as claim 4, wherein said dielectric layer is formed by plasma enhanced chemical vapor deposition (PECVD).

6. The method as claim 1, wherein said first layer comprises microcrystalline silicon (μ

c-Si).

7. The method as claim 6, wherein said first layer is formed by PECVD.

8. The method as claim 6, wherein said first layer is of the thickness about 3˜

12 nm.

9. The method as claim 1, wherein said second layer comprises hydrogenated amorphuous silicon (a-Si:

H).

10. The method as claim 9, wherein said second layer is formed by PECVD.

11. The method as claim 1, wherein said photoresist layer is patterned by the use of backside exposure when said substrate is a transparent glass.

12. The method as claim 1, wherein said plurality of doped regions are formed by ion implanting.

13. The method as claim 1, wherein said first layer and said second layer are annealed by an excimer laser.

14. The method as claim 13, wherein said laser annealing is performed by XeCI excimer laser of the power from about 217 to 264 mJ/cm².

15. The method as claim 1, wherein said source electrode and said drain electrode comprise metal.

16. Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device, said method comprising:

forming a conductive layer on a substrate said conductive layer comprising metal;

forming a dielectric layer on said substrate and said conductive layer;

forming a first layer on said dielectric layer, wherein said first layer comprises microcrystalline silicon (μ

c-Si);

forming a second layer on said first layer, wherein said second layer comprises hydrogenated amorphous silicon (a-Si;

H);

patterning a photoresist layer on said second layer;

defining a plurality of doped regions in said first layer and said second layer;

annealing said first layer and said second layer by a laser, thereby said first layer and said second layer are transformed to a polycrystalline silicon (poly-Si) layer;

patterning a channel region by etching portions of said poly-Si layer;

defining source and drain region in said poly-Si layer;

forming a source electrode and a drain electrode of said semiconductor device; and

forming a passivation layer on said source electrode, said drain electrode, said channel region and said dielectric layer.

17. The method as claim 16, wherein said dielectric layer comprises a-SiO_x :

H.

18. The method as claim 17, wherein said a-SiO_x :

H is deposited by plasma enhanced chemical vapor deposition (PECVD).

19. The method as claim 16, wherein said microcrystalline silicon (μ

c-Si) is formed by PECVD at the temperature from about 260°

˜

400°

C.

20. The method as claim 16, wherein said second layer comprises hydrogenated amorphous silicon (a-Si:

H) is formed by PECVD at the temperature from about 260°

˜

400°

C.

22. The method as claim 20, wherein said a-Si:

H is of the thickness about 60 nm.

23. The method as claim 16, wherein said photoresist layer is patterned by the use of backside exposure when said substrate is a transparent glass.

24. The method as claim 16, wherein said plurality of doped regions are formed by ion implanting.

25. The method as claim 16, wherein said first layer and said second layer are annealed by an excimer laser.

26. The method as claim 25, wherein said laser annealing is performed by XeCl excimer laser of the power from about 217 to 264 mJ/cm².

27. The method as claim 16, wherein said source electrode and said drain electrode comprise metal.

21. The method as clam 19, wherein said μ

c-Si is of the thickness from about 3˜

12 nm.