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Method for making III-Nitride laser and detection device

  • US 5,834,331 A
  • Filed: 10/17/1996
  • Issued: 11/10/1998
  • Est. Priority Date: 10/17/1996
  • Status: Expired due to Fees
First Claim
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1. A method of growing a III-V nitride compound semiconductor, comprising the steps of:

  • a) providing a substrate;

    b) growing a buffer layer on said substrate;

    c) growing, doping and annealing a p-type lower contact layer on said buffer layer;

    d) growing, doping and annealing a p-type lower confinement layer over said lower contact layer;

    e) growing an active layer over said lower confinement layer;

    f) growing and doping an n-type upper confinement layer over said active layer;

    g) growing an upper n-type contact layer over said upper confinement layer;

    h) doping said upper contact layer and thereby forming an unfinished structure;

    i) masking and etching said unfinished structure to expose said lower contact layer;

    j) ion implanting said exposed lower contact area with ions selected from the Group consisting of Ag, Hg, Cu, Si and Ge; and

    k) making an ohmic contact on each of said n-type and p-type contact layers to form said III-V nitride compound semiconductor.

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