Method of forming a bonding pad

• US 5,834,365 A
• Filed: 08/25/1997
• Issued: 11/10/1998
• Est. Priority Date: 04/10/1995
• Status: Expired due to Term

• Current Assignee: Alpha & Omega Semiconductor, Ltd.
• Original Assignee: United Microelectronics Corporation
• Inventors: Hsu, Bill Y. B., Ming-Tsung, Liu, Wu, Dev-Yuan, Chung, Hsien-Dar
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Zarneke, David A.
• Application Number:
  US08/917,407
• Time in Patent Office: 442 Days
• Field of Search: 438/612-617, 438/666
• US Class Current: 438/612
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/49155 : Manufacturing circuit on or in base
• CPC Class Codes: Y10T 29/49204 : Contact or terminal manufacturing

Abstract

A structure and a process for forming an improved bonding pad which allows better bonding between a bond wire and a metal bonding pad. Stripes are formed on a substrate. A conformal dielectric layer, a conformal barrier layer and a metal layer are formed over the stripes. A passivation layer with a window is formed defining a bonding pad area. The stripes promote an irregular surface in the barrier and metal layers which reduce stress between the dielectric layer, the barrier layer and the metal layer. Also, the irregular surfaces increase the barrier metal adhesion to the dielectric layer, reduce bond pad peel off, and increase bonding yields.

Claims

1. A method of forming an improved bonding pad in a bonding pad area on a substrate, the steps comprising:

forming broken stripes on a substrate in a pattern in at least said bonding pad area forming an irregular top surface configuration,

forming a conformal dielectric layer over said broken stripes in at least said bonding pad area thereby propagating said irregular top surface configuration and said pattern in said conformal dielectric layer,

forming a conformal barrier layer over said dielectric layer whereby said underlying irregular top surface configuration and pattern are propagated in said barrier layer surface,

depositing a metal layer over said barrier layer,

forming a passivation layer over said metal layer, and

forming a window in said passivation layer over said bonding pad area.

2. The method of claim 1 wherein the substrate includes a insulating layer underlying said stripes, said insulating layer formed from a material selected from the group consisting of phosphosilicate glass, borophosphosilicate glass, and silicon oxide.

3. The method of claim 1 wherein the stripes are composed of a material selected from the group consisting of polycide, polysilicon, titanium tungsten, a metal, and titanium nitride.

4. The method of claim 1 wherein the stripes have a thickness in the range of about 1000 to 8000 Å

and a width in the range of about 0.5 to 20 microns.

5. The method of claim 1 wherein said irregular top surface configuration of said dielectric conformal layer includes grooves, said grooves having a depth in the range of about 1000 to 8000 Å

.

6. The method of claim 1 where the stripes are arranged in said pattern of broken parallel spaced lines.

7. The method of claim 1 where the stripes are arranged in said pattern of spaced concentric broken circles.

8. The method of claim 1 wherein the barrier layer has a thickness in the range of about 500 to 2000 Å

.

9. The method of claim 1 wherein the dielectric layer has a thickness in the range of about 2000 to 10,000 Å

.

10. The method of claim 1 wherein the metal layer has a thickness in the range of between about 2000 to 12,000 Å

.

11. A method for forming a bonding pad on a bonding pad area on a substrate comprising:

forming stripes of a material on the substrate in a least the bonding pad area, the stripes arranged in a pattern of broken structures;

forming a dielectric layer over the stripes in at least the bonding pad area, the dielectric layer having an upper dielectric surface having a non-planar topography which protrudes over the stripes; and

forming a conducting region over the dielectric layer, the conducting region having an upper conducting surface having irregular topography which protrudes over the stripes.

12. The method of claim 11, further comprising forming a passivation layer over the conducting region and providing an opening in the passivation layer over the bonding pad area.

13. The method of claim 11, wherein the conducting region includes a barrier layer and a separate metal layer.

14. The method of claim 11, wherein the stripes comprise broken lines.

15. The method of claim 11, wherein the stripes comprise broken parallel spaced lines.

16. The method of claim 11, wherein the stripes comprise broken curves.

17. The method of claim 11, wherein the stripes comprise broken circles.

18. The method of claim 11, wherein the stripes comprise broken concentric circles.

19. A method for forming a bonding pad on a bonding pad area on a substrate comprising:

forming stripes of a material on the substrate, the stripes comprising broken structures extending across at least a portion of the bonding pad area;

forming a dielectric layer over the substrate and over the stripes in the bonding pad area, the dielectric layer having an upper dielectric surface having dielectric protrusions caused by the stripes;

forming a barrier layer over the dielectric layer, the barrier layer having an upper barrier surface having barrier protrusions caused by the dielectric protrusions;

forming a metal layer over the barrier layer, the metal layer having an upper metal surface having metal protrusions caused by the barrier protrusions;

forming a passivation layer over the conducting region and providing an opening over at least a portion of the bonding pad area.

20. The method of claim 19, wherein the broken structures comprise shapes selected from the group consisting of spaced apart broken parallel lines and spaced apart broken concentric circles.