Semiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particles

• US 5,834,825 A
• Filed: 12/23/1996
• Issued: 11/10/1998
• Est. Priority Date: 12/27/1995
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Imai, Kiyotaka
• Primary Examiner(s): Hardy, David B.
• Application Number:
  US08/773,206
• Time in Patent Office: 687 Days
• Field of Search: 257/531, 257/787, 257/788, 257/789, 257/792, 257/795
• US Class Current: 257/531
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A spiral conductive layer formed over a semiconductor substrate is covered with a ferromagnetic particle containing photo-sensitive polyimide layer, and the ferromagnetic particle containing photo-sensitive polyimide layer is patterned into a ferromagnetic insulating layer inserted between turning portions of the spiral conductive layer through a lithographic process, thereby making the structure of a spiral inductor simple.

Claims

1. A semiconductor device fabricated on a substrate and having an inductor, said inductor comprising:

a first conductive wiring formed into a spiral configuration over said substrate, and having a plurality of turning portions contiguous to one another,

a ferromagnetic insulation structure covering said first conductive wiring, and having a ferromagnetic insulating layer formed from an insulating material and ferromagnetic particles dispersed in said insulating material and inserted between said plurality of turning portions, and

an inductance regulator operative to change the amount of ferromagnetic insulating layer between said plurality of turning portions for regulating the inductance of said inductor.

2. A semiconductor device fabricated on a substrate and having an inductor, said inductor comprising:

a first conductive wiring formed into a spiral configuration over said substrate, and having a plurality of turning portions contiguous to one another,

a ferromagnetic insulating structure covering said first conductive wiring, and having a ferromagnetic insulating layer formed from an insulating material and ferromagnetic particles dispersed in said insulating material and inserted between said plurality of turning portions,

a second conductive wiring formed over said first conductive wiring and is electrically connected to one end portion of said first conductive wiring so that electric current flows between said one end portion and the other end portion of said first conductive wiring, and

said ferromagnetic structure further including an insulating layer covering said ferromagnetic insulating layer and having a through-hole so as to cause said second conductive wiring to be held in contact with said one end portion therethrough.

3. A semiconductor device fabricated on a substrate and having an inductor, said inductor comprising

a first conductive wiring formed into a spiral configuration over said substrate, and having a plurality of turning portions contiguous to one another, and

a ferromagnetic insulating structure covering said first conductive wiring, and having a ferromagnetic insulating layer formed from an insulating material and ferromagnetic particles dispersed in said insulating material and inserted between said plurality of turning portions, wherein said ferromagnetic structure includes an insulating layer provided between said first conductive wiring and said ferromagnetic insulating layer.

4. The semiconductor device as set forth in claim 3, in which said insulating layer serves as an inductance regulator operative to change the amount of ferromagnetic insulating layer between said plurality of turning portions for regulating the inductance of said inductor.

5. A semiconductor device fabricated on a substrate and having an inductor, said inductor comprising:

a first conductive wiring formed into a spiral configuration over said substrate, and having a plurality of turning portions contiguous to one another,

a ferromagnetic insulating structure covering said first conductive wiring, and having a ferromagnetic insulating layer formed from an insulating material and ferromagnetic particles dispersed in said insulating material and inserted between said plurality of turning portions,

a second conductive wiring formed over said first conductive wiring and is electrically connected to one end portion of said first conductive wiring so that electric current flows between said one end portion and the other end portion of said first conductive wiring, and

an inter-level insulating layer inserted between said first conductive wiring and said second conductive wiring and having a through-hole so as to cause said one end portion to be held in contact with said second conductive wiring therethrough.