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Semiconductor device having spiral wiring directly covered with an insulating layer containing ferromagnetic particles

  • US 5,834,825 A
  • Filed: 12/23/1996
  • Issued: 11/10/1998
  • Est. Priority Date: 12/27/1995
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device fabricated on a substrate and having an inductor, said inductor comprising:

  • a first conductive wiring formed into a spiral configuration over said substrate, and having a plurality of turning portions contiguous to one another,a ferromagnetic insulation structure covering said first conductive wiring, and having a ferromagnetic insulating layer formed from an insulating material and ferromagnetic particles dispersed in said insulating material and inserted between said plurality of turning portions, andan inductance regulator operative to change the amount of ferromagnetic insulating layer between said plurality of turning portions for regulating the inductance of said inductor.

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