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Single-polysilicon CMOS active pixel image sensor

  • US 5,835,141 A
  • Filed: 07/03/1996
  • Issued: 11/10/1998
  • Est. Priority Date: 11/22/1994
  • Status: Expired due to Term
First Claim
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1. A CMOS active pixel for converting an optical signal to an electronic signal, comprising:

  • a semiconductor substrate wherein charge carriers are generated from incident photonic energy;

    a photo gate for collecting the charge carriers, the photo gate having a contact electrically connected to a first region of polysilicon;

    a transfer transistor gate for transferring charge between the photo gate and output electronics, the transfer transistor gate having a contact electrically connected to a second region of polysilicon, said second region of polysilicon having a first side and a second side;

    a transfer transistor comprising the transfer transistor gate, a first diffusion region and a second diffusion region, wherein the first diffusion region is within the substrate between the first region of polysilicon and the first side of the second region of polysilicon, and wherein the second diffusion region is within the substrate nearest the second side of the second region of polysilicon;

    reset electronics electrically connected to the second diffusion region; and

    output electronics, electrically connected to the second diffusion region, which receive the charge transferred by the transfer transistor gate and conduct the signal to processing electronics.

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