Method and structure for polishing a wafer during manufacture of integrated circuits

• US 5,836,807 A
• Filed: 04/25/1996
• Issued: 11/17/1998
• Est. Priority Date: 08/08/1994
• Status: Expired due to Fees

• Current Assignee: Michael A. Leach
• Original Assignee: Michael A. Leach
• Inventors: Leach, Michael A.
• Primary Examiner(s): Eley, Timothy V.
• Assistant Examiner(s): BANKS, DERRIS HOLT
• Application Number:
  US08/638,056
• Time in Patent Office: 936 Days
• Field of Search: 451/287, 451/289, 451/278, 451/533, 451/41, 451/259, 451/288, 451/526, 451/529, 451/539, 451/165, 451/273, 451/290, 451/463, 451/481
• US Class Current: 451/41
• CPC Class Codes: B24B 37/11 Lapping tools

Abstract

A number of blocks are reciprocably supported in a polishing apparatus in accordance with this invention, entirely independent of each other so that lifting motion of one block is not transferred to an adjacent block, thus providing flexibility to follow the global curvature of the wafer. The polishing apparatus uses a block of a very hard design to ensure minimal deflection of the block into the microstructure of the wafer. Each block removes a portion of the wafer using relative motion between the block and the wafer. Each block is supported by at least three regions of the wafer during the relative motion, wherein each of the regions has the slowest rate of material removal in a die enclosing that region. In one embodiment, the smallest dimension of a block is approximately three times the size of the side of a die. The three point support and hard design of the blocks ensure local polishing removal uniformity while the independent support of the blocks ensures global uniformity, thus achieving an advantage over the conventional polishing process and apparatus.

Claims

1. An apparatus for removing a portion of a wafer using relative motion between said block and said wafer, said apparatus comprising:

a plurality of blocks, each block having an eroding surface;

means for forcing said eroding surface of each of said blocks and said portion of said wafer against each other; and

means for providing relative motion between said plurality of blocks and said wafer;

wherein;

said apparatus is devoid of means for forcing each block to rotate about an axis passing through said each block; and

said eroding surface has an area necessary for said each block to remain in contact with at least three regions of slow material removal in said wafer, said area being smaller than an area of said wafer.

2. The apparatus of claim 1 wherein each of said blocks consists essentially of a solid body formed of a predetermined polishing material.

3. The apparatus of claim 1 further comprising a plurality of cylinders, each of said blocks being mounted to reciprocate within one of said cylinders.

4. The apparatus of claim 1 wherein said means for forcing comprises:

means for applying uniform pressure on at least two blocks.

5. The apparatus of claim 1 wherein each of said regions has the slowest rate of material removal in said wafer.

6. The apparatus of claim 1 wherein each block is formed of a polishing material having a modulus of elasticity and a thickness sufficient to ensure minimal deflection of said polishing material into a microstructure of said wafer.

7. The apparatus of claim 1 wherein said three regions maintain said eroding surface parallel to a surface of said wafer during relative motion between said wafer and said plurality of blocks.

8. An apparatus for removing a portion of a wafer using relative motion between said block and said wafer, said apparatus comprising:

a plurality of blocks, each block having an eroding surface;

means for forcing said eroding surface of each of said blocks and said portion of said wafer against each other; and

means for providing relative motion between said plurality of blocks and said wafer;

wherein;

a first block of said plurality of blocks is movable independent of a second block of said plurality of blocks;

said portion of said wafer has a plurality of protrusions and each of said protrusions has a top surface; and

said eroding surface has an area necessary for at least one block to remain in contact with at least three regions of slow material removal in said wafer.

9. The apparatus of claim 8 wherein each of said regions has the slowest rate of material removal in said wafer.

10. The apparatus of claim 8 wherein said means for forcing comprises:

means for applying uniform pressure on at least two blocks.

11. The apparatus of claim 8 wherein each block is formed of a polishing material having a modulus of elasticity and a thickness sufficient to ensure minimal deflection of said polishing material into a microstructure of said wafer.

12. The apparatus of claim 8 wherein said three regions maintain said eroding surface parallel to a surface of said wafer during relative motion between said wafer and said plurality of blocks.

13. An apparatus for removing a portion of a wafer using relative motion between said block and said wafer, said wafer comprising a plurality of photolithographic images, said apparatus comprising:

a plurality of blocks, each block having an eroding surface; and

means for forcing said plurality of blocks and said wafer against each other;

wherein a first block of said plurality of blocks is movable independent of a second block of said plurality of blocks;

further wherein the smallest dimension of said eroding surface is approximately three times the size of a side of one of said photolithographic images.

14. The apparatus of claim 13 further comprising means for providing relative motion between said plurality of blocks and said wafer.

15. The apparatus of claim 14 wherein said means for providing relative motion comprises a motor for rotating said wafer.

16. The apparatus of claim 15 wherein said motor averages removal uniformity gradient across said wafer.

17. The apparatus of claim 14 wherein each of said blocks comprises a solid body and a layer of polishing material formed on said solid body.

18. The apparatus of claim 14 wherein said means for providing relative motion comprises means for moving said wafer at a uniform speed in a direction substantially perpendicular to an axis of one of said blocks.

19. The apparatus of claim 18 wherein said uniform speed is at least sufficient to allow all parts of said wafer to cross a path of said blocks.

20. The apparatus of claim 14 wherein a first number of said blocks are arranged equidistant from each other on a first circle, and a second number of said blocks are arranged on a second circle, said second circle being concentric to said first circle.

21. The apparatus of claim 20 wherein said second circle has a diameter larger than a diameter of said wafer.

22. The apparatus of claim 20 wherein each of said blocks in said first number is arranged on a first radial line passing through a center of said first circle and each of said blocks in said second number is arranged on a second radial line passing through a center of said second circle, said first radial line being staggered from said second radial line.

23. The apparatus of claim 14 wherein said means for providing relative motion comprises means for providing vibration motion.

24. The apparatus of claim 23 wherein said means for providing vibration motion provides ultrasonic vibration motion.

25. The apparatus of claim 13 wherein at least one of said blocks has an eroding surface at least partially constructed with an impregnated abrasive.

26. An apparatus for removing a portion of a wafer using relative motion between a block and said wafer, wherein said wafer has a plurality of photolithographic images formed on a surface of said wafer, each of said photolithographic images comprising a region having the slowest rate of material removal in said photolithographic image, said apparatus comprising:

a housing;

a plurality of blocks including said block supported by said housing; and

means for forcing said plurality of blocks and said wafer against each other;

wherein a first block of said plurality of blocks is movable independent of a second block of said plurality of blocks;

wherein each of said blocks has an eroding surface for eroding said wafer, said eroding surface having an area between a maximum area and a minimum area,

wherein the smallest dimension of said minimum area is greater than twice the largest side of a triangle, wherein said triangle is the largest possible triangle having a region at each corner such that said triangle excludes all regions on said wafer other than said regions at said corners, and

wherein the maximum area is the largest area possible for said eroding surface such that a curvature of said eroding surface deviates from a curvature of said wafer surface by a predetermined amount.

27. The apparatus of claim 26 wherein said eroding surface has the shape of a circle.

28. The apparatus of claim 26 wherein said eroding surface has the shape of a square.

29. The apparatus of claim 26 wherein said eroding surface has the shape of a rectangle.

30. The apparatus of claim 26 wherein said eroding surface has the shape of an ellipse.

31. A method comprising:

forming protrusions on a surface of a wafer;

forcing a plurality of blocks and said wafer against each other, wherein at least one block has an area necessary for said block to remain in contact with at least three regions of slow material removal in said wafer, said area being smaller than an area of said wafer;

causing relative motion between a block and said wafer;

wherein said method is devoid of a step of forcing each block to rotate about an axis passing through the block.

32. The method of claim 31, wherein said motion is linear motion.

33. The method of claim 31 wherein said motion is orbital motion.

34. The method of claim 31 wherein said block is supported by said wafer in at least three regions at all times during said relative motion, each one of said three regions having the slowest rate of material removal in a photolithographic image comprising said one region.

35. The method of claim 31 wherein said step of forcing comprises:

applying uniform pressure on at least two blocks.

36. The method of claim 31 being devoid of a step of distorting said polishing material into a microstructure of said wafer.

37. The method of claim 31 wherein said three regions maintain said eroding surface parallel to a surface of said wafer during said step of causing.

38. The method of claim 31, wherein said relative motion includes linear motion.

39. The method of claim 31, wherein said relative motion includes circular motion.

40. The method of claim 31, wherein said relative motion includes vibrational motion.

41. The method of claim 31, wherein said relative motion includes orbital motion.

42. A method comprising:

forming protrusions on a surface of a wafer;

forcing a plurality of blocks and said wafer against each other, wherein a first block of said plurality of blocks is movable independent of a second block of said plurality of blocks;

causing relative motion between a block and said wafer;

wherein said relative motion includes circular motion of block about a common central axis.

43. The method of claim 42 wherein said step of forcing comprises:

applying uniform pressure on at least two blocks.

44. The method of claim 42 being devoid of a step of distorting said polishing material into a microstructure of said wafer.

45. The method of claim 42 wherein said three regions maintain said eroding surface parallel to a surface of said wafer during said step of causing.

46. A method comprising:

forming protrusions on a surface of a wafer;

forcing a plurality of blocks and said wafer against each other, wherein a first block of said plurality of blocks is movable independent of a second block of said plurality of blocks;

causing relative motion between a block and said wafer;

wherein said relative motion includes vibrational motion.

47. The method of claim 46 wherein said stop of forcing comprises:

applying uniform pressure on at least two blocks.

48. The method of claim 46 being devoid of a step of distorting said polishing material into a microstructure of said wafer.

49. The method of claim 46 wherein said three regions maintain said eroding surface parallel to a surface of said wafer during said step of causing.

50. A method comprising:

supporting a plurality of blocks independent of each other in an apparatus;

forming protrusions on a surface of a wafer; and

polishing said protrusions using said apparatus having independently supported blocks.

51. The method of claim 50 wherein said supporting comprises reciprocably mounting said blocks such that an eroding surface of each of said blocks is parallel to said wafer surface during said polishing.

52. The method of claim 50 further comprising:

forming a plurality of blocks having a size three times the size of a side of a photolithographic image on a wafer to be polished, said forming being done prior to said supporting.

53. The method of claim 50 further comprising detecting an endpoint of said polishing process when said wafer is located in an open central area between said plurality of blocks.

54. The method of claim 50 further comprising passing said plurality of blocks over an abrading surface to true an eroding surface of each of said blocks to be parallel to a wafer support arm for holding said wafer.

55. The method of claim 50 further comprising using a liquid slurry between said wafer and said blocks, said liquid slurry comprising a plurality of abrasive particles.

56. An apparatus for removing a portion of a workpiece, the workpiece having a plurality of first regions and a plurality of second regions, each first region having a rate of removal slower than a rate of removal of a second region, the apparatus comprising:

a plurality of blocks, each block having an eroding surface of at least an area needed by the block to be supported by three of the first regions; and

means for causing relative motion between the plurality of blocks and the workpiece such that the apparatus removes a portion of the workpiece during the relative motion.

57. The apparatus of claim 56 wherein the smallest dimension of each block is greater than twice the largest side of a triangle, the triangle being the largest possible triangle having a first region at each corner so that the triangle excludes all first regions on the workpiece other than the first regions at the corners.

58. The apparatus of claim 56 wherein the workpiece is a wafer having a plurality of photolithographic regions, each photolithographic region having only one of the first regions and thereby the smallest dimension of each block is approximately three times the size of a side of one of the photolithographic images.

59. The apparatus of claim 56 wherein each of the blocks consists essentially of a solid cylindrical body formed of a predetermined polishing material having a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi.

60. The apparatus of claim 56 wherein each of the blocks is formed as a composite of a solid body with a layer of a predetermined polishing material having a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi.

61. The apparatus of claim 56 wherein the eroding surface of each block has an area supported by four of the first regions.

62. The apparatus of claim 56 wherein the eroding surface of each block has an area no larger than the largest possible area for the eroding surface to contact all first regions covered by the eroding surface prior to the relative motion.

63. The apparatus of claim 56 herein the eroding surface of each block has an area no larger than the largest area for which a curvature of the eroding surface deviates from a curvature of the workpiece by a predetermined amount.