Applications of protective ceramics

• US 5,838,530 A
• Filed: 10/17/1996
• Issued: 11/17/1998
• Est. Priority Date: 07/22/1996
• Status: Expired due to Term

• Current Assignee: Guobiao Zhang
• Original Assignee: Guobiao Zhang
• Inventors: Zhang, Guobiao
• Primary Examiner(s): Kincaid, Kristine L.
• Assistant Examiner(s): Dinkins, Anthony
• Application Number:
  US08/731,696
• Time in Patent Office: 761 Days
• Field of Search: 361/301.1, 361/301.4, 361/305, 361/311, 361/312, 361/313, 361/314, 361/321.1, 361/321.2, 361/321.3, 361/321.4, 361/321.5, 361/322, 257/301, 257/303, 257/306, 257/296, 257/530, 257/532, 257/528, 437/52, 437/60, 437/922, 437/195, 438/250, 438/253, 438/239, 438/240
• US Class Current: 361/321.4
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02244 of a metallic layer
• CPC Class Codes: H01L 21/02247 formation by nitridation, e.g. nitridation of the substrate
• CPC Class Codes: H01L 21/02252 formation by plasma treatment, e.g. plasma oxidation of the substrate after treatment of an insulating film by plasma H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02258 formation by anodic treatment, e.g. anodic oxidation
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H10N 60/12 Josephson-effect devices

Abstract

It is beneficial for an FPGA, PROM, DRAM and superconductive circuit to use a protective ceramic as its insulating material. This protective ceramic can densely cover metal surface and is free of defects. As a result, a high yield can be ensured. The Pilling-Bedworth ratio is a good indicator of the protective nature of an insulating material. It is desirable to limit the Pilling-Bedworth ratio larger than 1 and preferably smaller than 2. Multiple layers of ceramics can be used to further reduce the defect density and improve yield.

Claims

1. A capacitor-like device in an integrated circuit comprising

a first bottom electrode, said first bottom electrode comprising conductive materials, said first bottom electrode having a top surface;

a second top electrode, said second top electrode comprising conductive materials;

an insulating layer interposed between said first bottom electrode and said second top electrode, said insulating layer comprising at least one layer of a protective ceramic which is a compound of at least one metallic element and at least one non-metallic element from a group consisting of C, N, O, P, S.

2. The capacitor-like device of claim 1, wherein said protective ceramic has a Piling-Bedworth ratio larger than 1.

3. The capacitor-like device of claim 2, wherein said protective ceramic has a Pilling-Bedworth ratio smaller than 2.

4. The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal oxide.

5. The capacitor-like device of claim 4, wherein said protective metal oxide is an oxide of at least one element from a group including Be, Cu, Al, Cr, Mn, Fe, Co, Ni, Pd, Pb, Ce, Sc, Zn, Zr, La, Y, Nb, Rh and Pt.

6. The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal nitride.

7. The capacitor-like device of claim 6, wherein said protective metal nitride is a nitride of at least one element from a group including Ti, V, Cr, Fe, Cu, Zn, Zr, Nb, Ta, Al and Ge.

8. The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal carbide.

9. The capacitor-like device of claim 8, wherein said protective metal carbide is a carbide of at least one element from a group including Ti, Si, V, Cr, Mn, Fe, Ni, Y, Zr, Nb, Mo, La, Hf, Ta, W and Al.

10. The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal phosphide.

11. The capacitor-like device of claim 10, wherein said protective metal phosphide is a phosphide of at least one element from a group including Ti, Fe, Co, Ni, Cu, Cd and Sn.

12. The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal sulfide.

13. The capacitor-like device of claim 12, wherein said protective metal sulfide is a sulfide of at least one element from a group including Cu, Ag, I, Sn, Tl, Pb and Bi.

14. The capacitor-like device of claim 22, wherein:

said top surface of said first bottom electrode comprises at least one metallic element, said metallic element being a metallic component of said protective ceramic;

at least one portion of said protective ceramic is formed by a growing means, whereby at least one non-metallic element from a group consisting of C, N, O, P, S is incorporated into said top surface of said first bottom electrode.

15. The capacitor-like device of claim 1, wherein:

said protective ceramic is a protective metal oxide;

said top surface of said first bottom electrode comprises at least one element from a group including Be, Cu, Al, Cr, Mn, Fe, Co, Ni, Pd, Pb, Ce, Sc, Zn, Zr, La, Y, Nb, Rh and Pt.

16. The capacitor-like device of claim 14, wherein:

said protective ceramic is a protective metal nitride;

said top surface of said first bottom electrode comprising at least one element from a group including Ti, V, Cr, Fe, Cu, Zn, Zr, Nb, Ta, Al and Ge.

17. The capacitor-like device of claim 14, wherein:

said growing means includes thermal oxidation, thermal nitridation, plasma oxidation, plasma nitridation, anodization, and implantation.

18. The capacitor-like device of claim 1, wherein:

at least one portion of said protective ceramic is formed by a depositing means above said top surface of said first bottom electrode.

19. The capacitor-like device of claim 18, wherein:

said depositing means includes direct sputtering, reactive sputtering and chemical vapor deposition.

20. The capacitor-like device of claim 1, wherein:

at least one portion of said bottom electrode is formed by an evaporating means.

21. The capacitor-like device of claim 1, wherein said protective ceramic has a polycrystalline structure.

22. The capacitor-like device of claim 1, wherein said protective ceramic has an amorphous structure.

23. The capacitor-like device of claim 1 further being an antifuse for applications including FPGA and PROM applications.

24. The capacitor-like device of claim 1 further being a capacitor, whereby electrical charge can be accumulated on at least one of said first and second electrodes.

25. The capacitor of claim 24 further being a storage capacitor for applications including DRAM.

26. The capacitor-like device of claim 1 further being a Josephson Junction for applications including superconductive circuit.