Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication

• US 5,838,707 A
• Filed: 12/27/1996
• Issued: 11/17/1998
• Est. Priority Date: 12/27/1996
• Status: Expired due to Term

• Current Assignee: Google Technology Holdings LLC (Alphabet Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Ramdani, Jamal, Jiang, Wenbin, Lebby, Michael S.
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): Leung, Quyen Phan
• Application Number:
  US08/775,048
• Time in Patent Office: 690 Days
• Field of Search: 372/36, 372/45, 372/46, 372/50, 372/92, 372/96, 372/99, 438/22, 257/76, 148/33.1
• US Class Current: 372/50.11
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/0422 with n- and p-contacts on the same side of the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18375 based on metal reflectors
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

An ultraviolet/blue/green vertical cavity surface emitting laser (VCSEL) for use in high density data storage that includes the fabrication of a VCSEL structure on a metallic single crystal substrate. The metallic single crystal substrate is utilized as a back reflecting mirror that in conjunction with an aluminum gallium nitride/gallium nitride distributed Bragg reflector serves to increase the overall reflectance of the VCSEL device. The metallic substrate is fabricated of a material such as nickel aluminum, thereby achieving an improved lattice match to the included III-nitride materials.

Claims

1. A vertical cavity surface emitting laser comprising:

a metallic supporting substrate having a surface;

a first buffer layer disposed on the surface of the metallic supporting substrate;

a first distributed Bragg reflector disposed on the first buffer layer, capable of serving as a second buffer layer, the first distributed Bragg reflector including pairs of alternating layers;

a first contact layer disposed on the first distributed Bragg reflector, a first cladding region disposed on the first contact layer, an active region disposed on the first cladding region, a second cladding region disposed on the active region, and a second contact layer disposed on the second cladding region; and

a second distributed Bragg reflector disposed on the second contact layer.

2. A vertical cavity surface emitting laser as claimed in claim 1 wherein the metallic supporting substrate is comprised of nickel aluminum.

3. A vertical cavity surface emitting laser as claimed in claim 1 wherein the first buffer layer includes a plurality of layers of an aluminum nitride material.

4. A vertical cavity surface emitting laser as claimed in claim 3 where, in the first buffer layer including a plurality of layers of aluminum nitride, includes a repetitive process of depositing an atomic layer of aluminum on one of the surface of the metallic supporting substrate and the previous layer of aluminum nitride followed by a nitrogenization process.

5. A vertical cavity surface emitting laser as claimed in claim 1 where, in the pairs of alternating layers in the first distributed Bragg reflector, each pair of alternating layers includes a layer containing an n-doped gallium nitride material.

6. A vertical cavity surface emitting laser as claimed in claim 5 where, in the pairs of alternating layers in the first distributed Bragg reflector, each pair of alternating layers includes a layer of an aluminum gallium nitride material.

7. A vertical cavity surface emitting laser as claimed in claim 6 wherein the pairs of alternating layers in the first distributed Bragg reflector includes five to ten pairs of layers.

8. A vertical cavity surface emitting laser as claimed in claim 1 wherein the first contact layer includes a n-doped gallium nitride material.

9. A vertical cavity surface emitting laser as claimed in claim 8 wherein the second contact layer includes a p-doped gallium nitride material.

10. A vertical cavity surface emitting laser as claimed in claim 1 wherein the first cladding region includes a n-doped aluminum gallium nitride material.

11. A vertical cavity surface emitting laser as claimed in claim 10 wherein the second cladding region includes a p-doped aluminum gallium nitride material.

12. A vertical cavity surface emitting laser as claimed in claim 1 wherein the active region defines multiple quantum wells and includes an indium gallium nitride material.

13. A vertical cavity surface emitting laser as claimed in claim 1 wherein the second distributed Bragg reflector includes a dielectric mirror structure.

14. A vertical cavity surface emitting laser as claimed in claim 13 wherein the dielectric mirror structure includes having pairs of alternating layers of a zinc oxide material and an aluminum oxide material.

15. A vertical cavity surface emitting laser as claimed in claim 14 wherein the pairs of alternating layers in the second distributed Bragg reflector includes from one to ten pairs of layers.

16. A vertical cavity surface emitting laser comprising:

a metallic supporting substrate having a surface;

a buffer layer disposed on the surface of the metallic supporting substrate, the buffer layer including a plurality of layers of an aluminum nitride material;

a first distributed Bragg reflector disposed on the surface of the buffer layer, the first distributed Bragg reflector having pairs of alternating layers with a first layer in each pair including a n-doped gallium nitride material and a second layer in each pair including an aluminum gallium nitride material;

a first contact layer disposed on the first distributed Bragg reflector including a n-doped gallium nitride material;

a first cladding region disposed on the first contact layer including a n-doped aluminum gallium nitride material;

an active region disposed on the first cladding region, the active region having a quantum well layer, a first barrier layer and a second barrier layer with the quantum well layer positioned between the first barrier layer and the second barrier layer;

a second cladding region disposed on the active region and including a p-doped aluminum gallium nitride material;

a second contact layer disposed on the second cladding region and including a p-doped gallium nitride material; and

a second distributed Bragg reflector disposed on the second contact layer, the second distributed Bragg reflector including pairs of alternating layers with each pair including a layer with a zinc oxide material and a layer with an aluminum oxide material.

17. A vertical cavity surface emitting laser as claimed in claim 16 wherein the metallic supporting substrate is comprised of nickel aluminum.

18. A vertical cavity surface emitting laser as claimed in claim 16 wherein the first distributed Bragg reflector enhances reflectivity to between ninety and one hundred percent.

19. A vertical cavity surface emitting laser as claimed in claim 16 wherein the metallic supporting substrate and the gallium nitride material have a lattice mismatch of twelve percent or less.

20. A method of fabricating a vertical cavity surface emitting laser comprising the steps of:

providing a metallic supporting substrate having a surface;

disposing a buffer layer on the surface of the metallic supporting substrate, forming the buffer layer to include a plurality of layers of an aluminum nitride material;

disposing a first distributed Bragg reflector on the buffer layer, forming the first distributed Bragg reflector to include pairs of alternating layers, and positioning the pairs of alternating layers adjacent the buffer layer;

disposing a first contact layer on the first distributed Bragg reflector, a first cladding region on the first contact layer, an active region on the first cladding region, a second cladding region on the active region and a second contact layer on the second cladding region; and

disposing a second distributed Bragg reflector on the second contact layer.

21. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a first distributed Bragg reflector on the buffer layer includes forming each of the pairs of alternating layers with a first layer in each pair to include a n-doped gallium nitride material.

22. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 21 wherein the step of disposing a first distributed Bragg reflector on the buffer layer includes forming each of the pairs of alternating layers with a second layer in each pair to include an aluminum gallium nitride material.

23. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing the buffer layer to include a plurality of layers of an aluminum nitride material includes the step of depositing a layer of an aluminum material on the surface of the metallic supporting substrate and nitrogenizing the layer of the aluminum material during the method of fabricating and thereafter repeating the step of depositing a layer of an aluminum material and nitrogenizing the layer of the aluminum material to generate a plurality of layers of an aluminum nitride material.

24. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a first contact layer includes the step of forming the first contact layer to include a n-doped gallium nitride material.

25. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a first cladding region includes the step of forming the first cladding region to include a n-doped aluminum gallium nitride material.

26. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing an active region includes the step of forming the active region to define multiple quantum wells and to include an indium gallium nitride material.

27. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a second cladding region includes the step of forming the second cladding region to include a p-doped aluminum gallium nitride material.

28. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a second contact layer includes the step of forming the second contact layer to include a p-doped gallium nitride material.

29. A method of fabricating a vertical cavity surface emitting laser as claimed in claim 20 wherein the step of disposing a second distributed Bragg reflector includes the step of forming the second distributed Bragg reflector to include alternating layers of a zinc oxide material and an aluminum oxide material.

30. A method of fabricating a vertical cavity surface emitting laser comprising the steps of:

providing a nickel aluminum supporting substrate having a surface;

disposing a buffer layer on the surface of the nickel aluminum supporting substrate, forming the buffer layer to include a plurality of layers of an aluminum nitride material;

disposing a first distributed Bragg reflector on the buffer layer, forming the first distributed Bragg reflector to include pairs of alternating layers of a n-doped gallium nitride material and an aluminum gallium nitride material, and positioning the pairs of alternating layers adjacent the buffer layer;

disposing a n-doped gallium nitride contact layer on the first distributed Bragg reflector, a n-doped aluminum gallium nitride cladding layer on the n-doped gallium nitride contact layer, an indium gallium nitride active layer on the n-doped aluminum gallium nitride cladding layer, a p-doped aluminum gallium nitride cladding layer on the indium gallium nitride active layer and a p-doped gallium nitride contact layer on the p-doped aluminum gallium nitride cladding layer; and

disposing a second distributed Bragg reflector on the p-doped gallium nitride contact layer, forming the second distributed Bragg reflector to include pairs of alternating layers including a zinc oxide material and an aluminum oxide material, and positioning the pairs of alternating layers adjacent the p-doped gallium nitride contact layer.