Nanometer-scale silicon-on-insulator photonic componets
First Claim
1. A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising:
- (a) a silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1-5 H;
(b) a dielectric insulating layer having an upper surface portion underlying the lower surface portion of said light transmissive strip, and a lower surface portion;
(c) a silicon substrate having an upper surface portion underlying the lower surface portion of said dielectric insulating layer.
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Accused Products
Abstract
Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip.
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Citations
40 Claims
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1. A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising:
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(a) a silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1-5 H; (b) a dielectric insulating layer having an upper surface portion underlying the lower surface portion of said light transmissive strip, and a lower surface portion; (c) a silicon substrate having an upper surface portion underlying the lower surface portion of said dielectric insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising:
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(a) a silicon light transmissive strip having a rectangular cross section, an upper and lower surface portion, a height H of less than 300 nanometers and a width of less than 1.5 H; (b) a dielectric insulating layer having an upper surface portion in contact with the lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising:
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(a) a silicon light transmissive strip having a square cross section, the sides of said square cross section having a length of about 0.2 times the wavelength of light in free space transmitted therethrough; (b) a dielectric insulating layer having an upper surface portion in contact with a lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer. - View Dependent Claims (38, 39)
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40. A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising:
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(a) a crystal silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1.5 H; and (b) a dielectric insulating layer of single crystal bulk sapphire having an upper surface portion underlying the lower surface portion of said light transmissive strip.
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Specification