Wafer wet treating apparatus

• US 5,839,456 A
• Filed: 08/20/1997
• Issued: 11/24/1998
• Est. Priority Date: 12/24/1996
• Status: Expired due to Term

• Current Assignee: LG Semicon Co Ltd (SK Hynix Inc.)
• Original Assignee: LG Semicon Co Ltd (SK Hynix Inc.)
• Inventors: Han, Suk Bin
• Primary Examiner(s): Coe, Philip R.
• Application Number:
  US08/914,794
• Time in Patent Office: 461 Days
• Field of Search: 134/104.1, 134/111, 134/152, 134/185, 134/183, 134/902, 156/345 L
• US Class Current: 134/104.1
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A wafer wet treatment apparatus includes a first supply/discharge line, an outer bath connected to the first supply/discharge line, an inner bath within the outer bath, a second supply/discharge line connected to the inner bath, and at least one partition located on a portion of the inner bath.

Claims

1. A wafer wet treatment apparatus comprising:

a first supply/discharge line;

an outer bath connected to the first supply/discharge line;

an inner bath within the outer bath;

a second supply/discharge line connected to the inner bath;

at least one removable partition located within the inner bath and dividing the inner bath into isolated portions; and

at least one partition receiving member for holding the at least one removable partition.

2. The wafer wet treatment apparatus according to claim 1, wherein the first supply/discharge line acts as a supply line to the outer bath when the second supply/discharge acts as a discharge line for the inner bath.

3. The wafer wet treatment apparatus according to claim 1, wherein the first supply/discharge line acts as a discharge line for the outer bath when the second supply/discharge acts as a supply line to the inner bath.

4. The wafer wet treatment apparatus according to claim 1, further comprising an intermediate bath below the inner bath connected to the second supply/discharge line.

5. The wafer wet treatment apparatus according to claim 4, wherein the intermediate bath includes:

a partition support portion supporting the at least one partition; and

a wafer support portion having a hole supporting a wafer, the wafer support portion being higher than the partition support portion.

6. The wafer wet treatment apparatus according to claim 1, further comprising additional partitions adjacent to the at least one partition and a cover connecting adjacent partitions.

7. The wafer wet treatment apparatus according to claim 6, wherein the partitions have different heights.

8. The wafer wet treatment apparatus according to claim 7, wherein a partition closer to the inner bath is shorter than a partition further from the inner bath.

9. The wafer wet treatment apparatus according to claim 7, wherein a partition closer to the inner bath is taller than a partition further from the inner bath.

10. The wafer wet treatment apparatus according to claim 1, further comprising a third bath and a spray system, the third bath receiving a partition and cleaning the partition with the spray system.

11. The wafer wet treatment apparatus according to claim 1, further comprising third and fourth baths and a spray system, the third and fourth bath receiving portions of a partition and cleaning the portions of the partition with the spray system.

12. The wafer wet treatment apparatus according to claim 1, further comprising a solution supply unit supplying a solution to the first and second supply/discharge lines.

13. The wafer wet treatment apparatus according to claim 1, further comprising a recirculating unit including a filter and a pump coupled to the first and second supply/discharge lines, the recirculating unit receiving used solution from one of the inner and outer baths, filtering the used solution and recirculating the filtered solution.