Covalent carbon nitride material comprising C.sub.2 N and formation method

• US 5,840,435 A
• Filed: 06/07/1995
• Issued: 11/24/1998
• Est. Priority Date: 07/15/1993
• Status: Expired due to Fees

• Current Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Original Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Inventors: Zhang, Z. John, Niu, Chunming, Lieber, Charles M.
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US08/477,194
• Time in Patent Office: 1,266 Days
• Field of Search: 51/307, 51/309, 384/492, 423/364, 423/414, 428/336, 428/457, 428/469, 428/446, 428/698
• US Class Current: 428/698
• CPC Class Codes: C01B 21/0605 Binary compounds of nitrogen with carbon
• CPC Class Codes: C23C 14/0021 Reactive sputtering or evaporation
• CPC Class Codes: C23C 14/0658 Carbon nitride
• CPC Class Codes: C23C 14/28 by wave energy or particle radiation C23C14/32 - C23C14/48 take precedence
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A nitride material comprises C₂ N. A method of forming a covalent carbon material includes forming an atomic nitrogen source, forming an elemental reagent source and combining the atomic nitrogen, elemental reagent to form the covalent carbon material and annealing the covalent carbon material. The elemental reagent is reactive with the atomic nitrogen of the atomic nitrogen source to form the covalent carbon material. Annealing the covalent carbon material produces the C₂ N. In one embodiment, essentially all carbon nitride chemical bonds are single or double bonds.

Claims

1. A composition comprising C₂ N.

2. A nitride material wherein at least a portion of the material has an empirical formula of C₂ N.

3. A nitride material of claim 2 wherein the material is a film.

4. A nitride material of claim 3 wherein at least 10% of the film has an empirical formula of C₂ N.

5. A nitride material of claim 3 wherein at least 20% of the film has an empirical formula of C₂ N.

6. A nitride material of claim 3 wherein at least 50% of the film has an empirical formula of C₂ N.

7. A nitride material of claim 6 wherein the film includes less than about five percent oxygen.

8. A nitride material of claim 3 wherein essentially all of the film has an empirical formula of C₂ N.

9. A nitride material of claim 8 wherein the film has a thickness in the range of between about 0.1 and five microns.

10. A nitride material of claim 2 wherein said material has a high electrical resistivity.

11. A nitride material of claim 10 wherein said material has an electrical resistivity of greater than about 1×

10⁵ Ω

-cm.

12. A nitride material of claim 2 wherein said material has a high thermal conductivity.

13. A nitride material of claim 12 wherein said thermal conductivity is between about 0.8 and 1.3 with W/m-k.

14. A nitride material of claim 2 wherein said covalent nitride material substantially comprises C--N and C═

N bonding.

15. A nitride material of claim 14 wherein essentially all carbon nitride chemical bonds are single or double bonds.

16. A nitride material of claim 2 wherein said material includes at least about 35 atomic percent nitrogen.

17. A composite, comprising:

a) a substrate; and

b) an covalent nitride material on said substrate, at least a portion of said covalent nitride material having an empirical formula of C₂ N.

18. A composite of claim 17 wherein the covalent nitride material is a film.

19. A composite of claim 18 wherein the substrate includes silicon.

20. A composite of claim 18 wherein the substrate includes quartz.

21. A composite of claim 18 wherein the substrate includes Ni-metal.

22. A composite of claim 18, wherein the substrate includes titanium nitride.

23. A composite of claim 18, wherein the substrate includes NbN.

24. A composite of claim 18 wherein said composite has a high electrical resistivity.

25. A composite of claim 18 wherein said composite has a high thermal conductivity.

26. A composite of claim 19 wherein essentially all carbon nitride chemical bonds of said film are single or double bonds.

27. A composite of claim 18 wherein the substrate includes at least one bearing surface.

28. A composite of claim 19 wherein essentially all of the film has an empirical formula of C₂ N.

29. A composite of claim 19 wherein the film has a thickness in a range of between about 0.1 and five microns.

38. A composite of claim 21 wherein the substrate includes polycrystalline nickel.

39. A composite of claim 18 wherein the substrate is at least one component of a cutting tool.

30. A nitride material wherein at least a portion of said material has an empirical formula of C₂ N, the material being formed by a method comprising the steps of:

a) forming an atomic nitrogen source;

b) forming an elemental carbon source, said elemental carbon source including elemental carbon which is reactive with atomic nitrogen of said atomic nitrogen source to form the covalent carbon nitride material;

c) combining the atomic nitrogen and the elemental carbon to cause the atomic nitrogen and the elemental carbon to react and form a covalent carbon nitride material; and

d) annealing said covalent carbon nitride material, whereby an annealed covalent carbon nitride material is formed wherein at least a portion of said annealed covalent carbon nitride material has an empirical formula of C₂ N.

31. An annealed covalent carbon nitride material of claim 30 wherein the material contains at least about 35 percent nitrogen.

32. An annealed covalent carbon nitride material of claim 30 wherein the material substantially comprises C--N and C═

N bonding.

33. An annealed covalent carbon nitride material of claim 32 wherein essentially all carbon nitride chemical bonds of the annealed extended material are single or double bonds.

34. An annealed covalent carbon nitride material of claim 30 wherein said covalent carbon nitride material is annealed at a temperature in a range of between about 300°

and about 700°

C.

35. An annealed covalent carbon nitride material of claim 34 wherein said covalent carbon nitride material is annealed at a temperature of about 550°

C.

36. An annealed covalent carbon nitride material of claim 35 wherein said covalent carbon nitride material is annealed for a period of time in a range of between about 0.5 and 24 hours.

37. An annealed covalent carbon nitride material of claim 36 wherein said covalent carbon nitride material is annealed for about three hours.