×

Membrane dielectric isolation IC fabrication

  • US 5,840,593 A
  • Filed: 03/10/1997
  • Issued: 11/24/1998
  • Est. Priority Date: 04/08/1992
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of fabricating an integrated circuit comprising the steps of:

  • providing a free standing membrane formed of a layer of low stress dielectric and a substrate layer;

    forming a plurality of transistors in the substrate layer; and

    forming interconnections on the dielectric layer between the transistors.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×