Conductive layer with anti-reflective surface portion
First Claim
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1. A semiconductor device comprising:
- a substrate;
an insulating layer formed on the substrate; and
a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion, and the reflectivity of the upper portion was reduced to less than about 50% of the reflectivity of the remainder of the conductive layer.
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Abstract
The application of a dissimilar anti-reflective coating on a conductive layer during photolithographic processing is avoided, as by modifying a portion of the upper surface of the conductive layer to exhibit anti-reflective properties. In an embodiment of the present invention, impurity ions are implanted into a portion of the upper surface of an aluminum or an aluminum-alloy conductive layer to render the upper portion substantially amorphous and, hence, decrease its reflectivity to perform an anti-reflective function.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion, and the reflectivity of the upper portion was reduced to less than about 50% of the reflectivity of the remainder of the conductive layer.
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2. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implanting impurity atoms thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion and the conductive layer comprises a metal and the implanted impurity atoms are heavier than metal atoms of the conductive layer.
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3. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion and the conductive layer comprises a metal, the anti-reflective upper portion is substantially amorphous, and the remainder of the conductive layer is substantially crystalline. - View Dependent Claims (4)
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5. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion and the conductive layer comprises an interconnection pattern defined by a plurality of conductive lines having an interwiring spacing less than about 1 micron. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion and the thickness of the anti-reflective upper portion is less than about 1000Å
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13. A semiconductor device comprising:
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a substrate; an insulating layer formed on the substrate; and a conductive layer having an upper surface and a lower surface formed above the insulating layer;
whereinthe upper surface comprises an ion implanted, converted anti-reflective upper portion extending into the conductive layer, which anti-reflective upper portion is formed by ion implantation thereby altering the reflectivity and converting the upper surface of the conductive layer into the anti-reflective upper portion and the lower surface of the conductive layer is formed on a metallic underlayer.
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14. A semiconductor device, comprising:
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a substrate; an insulating layer on the substrate; a conductive interconnect pattern on the insulating layer, the conductive interconnect pattern comprising a plurality of metal lines separated by an interwiring spacing less than about one micron, at least one metal line having a substantially amorphous anti-reflective film thereon of the same metal as the metal line, which substantially amorphous anti-reflective film is formed by ion implanting the metal line to alter its surface reflectivity. - View Dependent Claims (15, 16, 17, 18)
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Specification