Dielectric multilayered reflector

• US 5,841,584 A
• Filed: 04/26/1996
• Issued: 11/24/1998
• Est. Priority Date: 04/26/1995
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Okumura, Toshiyuki, Takatani, Kunihiro
• Primary Examiner(s): Epps, Georgia Y.
• Assistant Examiner(s): BEY, DAWN MARIE
• Application Number:
  US08/639,989
• Time in Patent Office: 942 Days
• Field of Search: 359/580, 359/581, 359/582, 359/583, 359/584, 359/585, 359/586, 359/587, 359/588, 372/98, 372/99
• US Class Current: 359/586
• CPC Class Codes: G02B 5/0833 comprising inorganic materials only
• CPC Class Codes: H01L 23/647 Resistive arrangements H01L23/66, H01L23/62 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0281 Coatings made of semiconductor materials
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments

Abstract

The dielectric multilayered reflector of the invention is formed on at least one of two emitting surfaces of a semiconductor laser device. The dielectric multilayered reflector includes: a multilayered structure formed by stacking a plurality of layers; and a layer made of magnesium difluoride. In this dielectric multilayered reflector, the multilayered structure includes at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.

Claims

1. A dielectric multilayered reflector, which is formed on at least one of two emitting surfaces of a semiconductor laser device, comprising:

a multilayered structure formed by stacking a plurality of layers on one of the emitting surfaces of the semiconductor laser device; and

a layer made of magnesium difluoride, wherein the multilayered structure comprises at least one layer made of an oxide dielectric material and the layer made of magnesium difluoride is formed on a surface of an outermost layer of the multilayered structure.

2. A dielectric multilayered reflector according to claim 1, wherein the oxide dielectric material is at least one material selected from the group consisting of:

silicon dioxide (SiO₂);

titanium dioxide (TiO₂);

zirconium dioxide (ZrO₂); and

tantalum pentoxide (Ta₂ O₅).

3. A dielectric multilayered reflector according to claim 1, wherein the multilayered structure is formed by periodically stacking a plurality of layers having respectively different refractive indices.

4. A dielectric multilayered reflector according to claim 1, wherein the multilayered structure is formed by alternately stacking three pairs of layers made of silicon dioxide (SiO₂) and layers made of titanium dioxide (TiO₂).

5. The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group II-VI compound semiconductor and wherein the plurality of layers of the multilayered structure are formed by an alternating EB deposition within a vacuum container at a temperature of about 100°

C., to about 150°

C., thereby enhancing the adhesion strength among the plurality of layers in the multilayer structure.

6. The dielectric multilayered reflector according to claim 5, wherein a pressure in the vacuum container is about 4×

10^-6 Torr.

7. The dielectric multilayered reflector according to claim 5, wherein the EB deposition includes introducing oxygen for compensation of oxygen atom vacancies.

8. The dielectric multilayered reflector according to claim 1, wherein a thickness of the magnesium difluoride layer is such that an optical thickness of the magnesium difluoride layer is one-half of a lasing wavelength of the semiconductor laser device.

9. The dielectric multilayered reflector according to claim 5, wherein the semiconductor laser comprises a group II-VI compound semiconductor and wherein the magnesium difluoride layer is formed by an alternating EB deposition within a vacuum container at a temperature of about 100°

C. to about 150°

C., thereby enhancing the adhesion strength between the multilayered structure and the magnesium difluoride layer.

10. The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a higher refractive index than the second layers, and wherein the first layers exert stress in one direction and the second layers exert stress in an opposite direction, thereby reducing a total stress of the multilayered structure.

11. The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a refractive index of about 2.3 and the second layers have a refractive index of about 1.45.

12. The dielectric multilayered reflector of claim 1, wherein the magnesium difluoride layer has a refractive index of about 1.36.

13. The dielectric multilayered reflector of claim 11, wherein the semiconductor laser has a lasing wavelength of about 520 nm and the first layers each have a thickness of about 56.52 nm, the second layers each have a thickness of about 89.66 nm and the magnesium difluoride layer has a thickness of about 191.18 nm.

14. The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group III-V compound semiconductor and wherein the plurality of layers of the multilayered structure are formed by an alternating EB deposition within a vacuum container at a temperature of about 200°

C., to about 250°

C., thereby enhancing the adhesion strength among the plurality of layers in the multilayer structure.

15. The dielectric multilayered reflector according to claim 1, wherein the semiconductor laser comprises a group III-V compound semiconductor and wherein the magnesium difluoride layer is formed by an alternating EB deposition within a vacuum container at a temperature of about 200°

C. to about 250°

C., thereby enhancing the adhesion strength between the multilayered structure and the magnesium difluoride layer.

16. The dielectric multilayered reflector of claim 1, wherein the multilayered structure further comprises a plurality of alternating first and second layers, wherein the first layers have a refractive index of about 1.45 and the second layers have a refractive index of about 3.6.

17. The dielectric multilayered reflector of claim 16, wherein the semiconductor laser has a lasing wavelength of about 780 nm and the first layers each have a thickness of about 134.48 nm, the second layers each have a thickness of about 54.17 nm magnesium difluoride layer has a thickness of about 286.76 nm.

18. The dielectric multilayered reflector of claim 1, wherein the magnesium difluoride layer has a thickness of about 100 nm to about 600 nm.