Magnetic tunnel junction device with antiferromagnetically coupled pinned layer

• US 5,841,692 A
• Filed: 07/16/1997
• Issued: 11/24/1998
• Est. Priority Date: 03/18/1996
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Sun, Jonathan Zanhong, Parkin, Stuart Stephen Papworth, Slonczewski, John Casimir, Gallagher, William Joseph
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): TRAN, MICHAEL THANH
• Application Number:
  US08/895,118
• Time in Patent Office: 496 Days
• Field of Search: 365/171, 365/173
• US Class Current: 365/173
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is formed as a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer. The free and pinned ferromagnetic layers are located in separate spaced-apart planes so as to not overlap the tunnel barrier layer. An insulating layer surrounds the lateral perimeter of at least the free ferromagnetic layer and supports an electrical lead that makes contact with the free ferromagnetic layer.

Claims

1. A magnetic tunnel junction device comprising:

a planar pinned ferromagnetic layer having first and second generally parallel surfaces, the pinned layer comprising a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer;

an antiferromagnetic layer formed on and in contact with the first surface of the pinned ferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer in a preferred direction and substantially preventing its rotation in the presence of an applied magnetic field;

an insulating tunnel barrier layer located on and in contact with the second surface of the pinned ferromagnetic layer;

a planar free ferromagnetic layer located on and in contact with the insulating tunnel barrier layer, the free ferromagnetic layer having a magnetization free to rotate in the presence of an applied magnetic field;

wherein the pinned and free ferromagnetic layers are in separate spaced-apart planes without overlap of the insulating tunnel barrier layer; and

a substrate, the pinned ferromagnetic layer, the antiferromagnetic layer, the tunnel barrier layer and the free ferromagnetic layer being formed on the substrate, whereby tunneling current passes through the tunnel barrier layer in a direction generally perpendicular to the planar pinned and free ferromagnetic layers when the planar pinned and free ferromagnetic layers are connected to electrical circuitry.

2. The magnetic tunnel junction device according to claim 1 wherein the magnetization directions of the pinned and free ferromagnetic layers are substantially parallel or antiparallel to one another in the absence of an applied magnetic field.

3. The magnetic tunnel junction device according to claim 1 wherein the free ferromagnetic layer'"'"'s magnetization direction is substantially perpendicular to the pinned ferromagnetic layer'"'"'s magnetization direction in the absence of an applied magnetic field.

4. The magnetic tunnel junction device according to claim 1 wherein the lateral perimeters of the pinned and free ferromagnetic layers are generally rectangularly shaped, and wherein the magnetization directions of the pinned and free ferromagnetic layers are aligned generally along the lengths of the rectangles.

5. The magnetic tunnel junction device according to claim 1 further comprising a nonmagnetic conductor layer electrically connected to the free ferromagnetic layer and an insulator layer surrounding the lateral perimeter of the free ferromagnetic layer and supporting the insulator layer on a plane substantially parallel to the first and second surfaces of the free ferromagnetic layer.