System for real-time control of semiconductor wafer polishing including heater

• US 5,842,909 A
• Filed: 01/28/1998
• Issued: 12/01/1998
• Est. Priority Date: 08/25/1993
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Doan, Trung Tri
• Primary Examiner(s): Rose, Robert A.
• Assistant Examiner(s): NGUYEN, GEORGE BINH MINH
• Application Number:
  US09/015,021
• Time in Patent Office: 307 Days
• Field of Search: 451/517
• US Class Current: 451/7
• CPC Class Codes: B23Q 15/013 Control or regulation of feed movement B23Q15/12 takes precedence
• CPC Class Codes: B23Q 15/12 Adaptive control, i.e. adjusting itself to have a performance which is optimum according to a preassigned criterion
• CPC Class Codes: B24B 13/015 of television picture tube viewing panels, headlight reflectors or the like
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/015 Temperature control
• CPC Class Codes: B24B 37/107 in a rotary movement only, about an axis being stationary during lapping
• CPC Class Codes: B24B 37/12 Lapping plates for working plane surfaces
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 49/003 involving acoustic means
• CPC Class Codes: B24B 49/02 according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent B24B49/12 takes precedence
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/10 involving electrical means B24B49/02, B24B49/08 take precedence
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• CPC Class Codes: G05B 19/404 characterised by control arrangements for compensation, e.g. for backlash, overshoot, tool offset, tool wear, temperature, machine construction errors, load, inertia G05B19/19, G05B19/41 take precedence
• CPC Class Codes: G05B 2219/34403 RTI real time, kernel, processing
• CPC Class Codes: G05B 2219/37398 Thickness
• CPC Class Codes: G05B 2219/37602 Material removal rate
• CPC Class Codes: G05B 2219/45026 Circuit board, pcb
• CPC Class Codes: G05B 2219/45199 Polish
• CPC Class Codes: G05B 2219/45232 : CMP chemical mechanical polishing of wafer
• CPC Class Codes: G05B 2219/49052 : Accessory, coolant
• CPC Class Codes: G05B 2219/49057 : Controlling temperature of workpiece, tool, probe holder

Abstract

A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Claims

1. A system for polishing a semiconductor wafer, the system comprising:

a platen subassembly defining a polishing area;

a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;

means supported by the polishing head for heating the wafer while the wafer face is being polished, the heating means including a heating filament supported by the polishing head; and

means for heating the platen subassembly.

2. A system in accordance with claim 1 wherein the platen subassembly comprises a platen having a hollow interior, and wherein the means for heating the platen subassembly comprises means for flowing fluid through the hollow interior and for heating the fluid.

3. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis and having a hollow interior, a polishing head which supports the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism which moves the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that upon variation change the polishing rate and polishing uniformity;

a fluid passage in fluid communication with the hollow interior;

a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior;

a heating element proximate the fluid passage;

a controller operably coupled to the wafer polishing assembly for monitoring and managing in situ at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller; and

the controller adjusting in situ at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer.

4. A system according to claim 3 wherein the platen rotates at a variable platen velocity, the controller being coupled to monitor the platen velocity and to controllably adjust in situ the platen velocity in response to the control information from the processor.

5. A system according to claim 4 wherein the wafer polishing assembly includes a platen subassembly and a polishing head for supporting and moving the semiconductor wafer across the platen subassembly along an adjustable polishing path, the controller being coupled to controllably adjust in situ the polishing path in response to the control information from the processor.

6. A system according to claim 5 wherein the polishing head moves the semiconductor wafer across the platen subassembly at a wafer movement rate, the controller being coupled to controllably adjust in situ the wafer movement rate in response to the control information from the processor.

7. A system for polishing a semiconductor wafer comprising:

a rotatable platen subassembly defining a polishing area;

a drive mechanism coupled to rotate the platen subassembly at a platen velocity;

a polishing head for supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face whereby individual regions of the wafer face have different polishing rates, the polishing head being movable across the platen subassembly;

a heating element supported by the polishing head;

the polishing head having pressure applicators for applying various localized pressures on the individual regions of the semiconductor wafer to conform the wafer face to a selected contour; and

a polish control subsystem for monitoring in situ the polishing rates at various regions of the semiconductor wafer, the polish control subsystem adjusting in situ the platen velocity.