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High withstand-voltage lateral MOSFET with a trench and method of producing the same

  • US 5,844,275 A
  • Filed: 09/20/1995
  • Issued: 12/01/1998
  • Est. Priority Date: 09/21/1994
  • Status: Expired due to Term
First Claim
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1. A high withstand-voltage lateral MOSFET with a trench, comprising:

  • a second conductive type semiconductor layer;

    a first conductive type base region formed in a portion of a surface layer of said second conductive type semiconductor layer;

    a second conductive type source region formed in self-alignment in a portion of a surface layer of said first conductive type base region;

    a second conductive type drain drift region formed in a portion of the surface layer of said second conductive type semiconductor layer;

    a trench formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

    a second conductive type drain region formed in the surface layer of said second conductive type semiconductor layer on a side opposite to said first conductive type base region with respect to said trench and partially overlapping said second conductive type drain drift region;

    a gate electrode which is provided on an exposed surface portion of said first conductive type base region through a gate oxide film;

    a source electrode provided on a surface of said second conductive type source region; and

    a drain electrode provided on a surface of said second conductive type drain region.

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