High withstand-voltage lateral MOSFET with a trench and method of producing the same

• US 5,844,275 A
• Filed: 09/20/1995
• Issued: 12/01/1998
• Est. Priority Date: 09/21/1994
• Status: Expired due to Term

• Current Assignee: Fuji Electric Systems Company Limited
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Kitamura, Akio, Fujishima, Naoto
• Primary Examiner(s): FAHMY, WAEL M
• Application Number:
  US08/531,312
• Time in Patent Office: 1,168 Days
• Field of Search: 257/329, 257/330, 257/331, 257/332, 257/335, 257/336, 257/341, 257/343
• US Class Current: 257/335
• CPC Class Codes: H01L 21/2257 the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/105 with vertical doping variation H01L29/7827 takes precedence
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

A high withstand-voltage lateral MOSFET with a trench includes a first conductive type semiconductor layer; a second conductive type source region; a second conductive type drain drift region, the second conductive type source region and the second conductive type drain drift region being formed in a portion of a surface layer of the first conductive type semiconductor layer at a distance from each other; a trench which formed in a surface layer of the second conductive type drain drift region from the surface side thereof; a second conductive type drain region formed in the surface layer of the first conductive type semiconductor layer on the side opposite to the second conductive type source region with respect to the trench and partially overlaps with the second conductive type drain drift region; a gate electrode provided on the surface of a surface exposed portion of the first conductive type semiconductor layer through a gate oxide film; a source electrode provided on the surface of the second conductive type source region; and a drain electrode provided on the surface of the second conductive type drain region.

Claims

1. A high withstand-voltage lateral MOSFET with a trench, comprising:

a second conductive type semiconductor layer;

a first conductive type base region formed in a portion of a surface layer of said second conductive type semiconductor layer;

a second conductive type source region formed in self-alignment in a portion of a surface layer of said first conductive type base region;

a second conductive type drain drift region formed in a portion of the surface layer of said second conductive type semiconductor layer;

a trench formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

a second conductive type drain region formed in the surface layer of said second conductive type semiconductor layer on a side opposite to said first conductive type base region with respect to said trench and partially overlapping said second conductive type drain drift region;

a gate electrode which is provided on an exposed surface portion of said first conductive type base region through a gate oxide film;

a source electrode provided on a surface of said second conductive type source region; and

a drain electrode provided on a surface of said second conductive type drain region.

2. A high withstand-voltage lateral MOSFET with a trench according to claim 1, further comprising a first conductive type channel region formed in a surface layer directly under said gate electrode between said second conductive type source region and said trench.

3. A high withstand-voltage lateral MOSFET with a trench according to claim 1, further comprising an insulating film filling said trench.

4. A high withstand-voltage lateral MOSFET with a trench according to claim 1, further comprising a semi-insulating film filling said trench.

5. A high withstand-voltage lateral MOSFET with a trench according to claim 3 or 4 wherein said gate electrode extends over said trench.

6. A high withstand-voltage lateral MOSFET with a trench according to claim 1, wherein a depth of said trench is larger than a width thereof.

7. A high withstand-voltage lateral MOSFET with a trench according to claim 1, wherein a plurality of trenches are formed, and a plurality of second conductive type drain drift regions formed along inner walls of said trenches are connected in series.

8. A high withstand-voltage lateral MOSFET with a trench according to claim 4, wherein said gate electrode extends over said trench.

9. A high withstand-voltage lateral MOSFET with a trench according to claim 1, wherein said gate electrode extends over said trench.

10. A high withstand-voltage lateral MOSFET with a trench according to claim 2, wherein said gate electrode extends over said trench.

11. A high withstand-voltage lateral MOSFET with a trench according to claim 6, wherein said gate electrode extends over said trench.

12. A high withstand-voltage lateral MOSFET with a trench, comprising:

a first conductive type semiconductor layer;

a second conductive type source region;

a second conductive type drain drift region, said second conductive type source region and said second conductive type drain drift region being formed in a portion of a surface layer of said first conductive type semiconductor layer at a distance from each other;

a trench, filled with an insulating film, formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

a second conductive type drain region formed in the surface layer of said first conductive type semiconductor layer on a side opposite to said second conductive type source region with respect to said trench and partially overlapping said second conductive type drain drift region;

a gate electrode, extending over said trench, provided on an exposed surface portion of said first conductive type semiconductor layer through a gate oxide film;

a source electrode provided on a surface of said second conductive type source region; and

a drain electrode provided on a surface of said second conductive type drain region.

13. A high withstand-voltage lateral MOSFET with a trench, comprising:

a first conductive type semiconductor layer;

a second conductive type source region;

a second conductive type drain drift region, said second conductive type source region and said second conductive type drain drift region being formed in a portion of a surface layer of said first conductive type semiconductor layer at a distance from each other;

a trench, filled with a semi-insulating film, formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

a second conductive type drain region formed in the surface layer of said first conductive type semiconductor layer on a side opposite to said second conductive type source region with respect to said trench and partially overlapping said second conductive type drain drift region;

a gate electrode, extending over said trench, provided on an exposed surface portion of said first conductive type semiconductor layer through a gate oxide film;

a source electrode provided on a surface of said second conductive type source region; and

a drain electrode provided on a surface of said second conductive type drain region.

14. A high withstand-voltage lateral MOSFET with a trench, comprising:

a first conductive type semiconductor layer;

a first conductive type base region formed in a portion of a surface layer of said first conductive type semiconductor layer;

a second conductive type source region formed in self-alignment in a portion of a surface layer of said first conductive type base region;

a second conductive type drain drift region formed in a portion of the surface layer of said first conductive type semiconductor layer;

a trench, filled with an insulating film, formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

a second conductive type drain region formed in the surface layer of said first conductive type semiconductor layer on a side opposite to said first conductive type base region with respect to said trench and partially overlapping said second conductive type drain drift region;

a gate oxide film;

a gate electrode, extending over said trench, provided on an exposed surface portion of said first conductive type base region through said gate oxide film;

a source electrode provided on a surface of said second conductive type source region; and

a drain electrode provided on a surface of said second conductive type drain region.

15. A high withstand-voltage lateral MOSFET with a trench, comprising:

a first conductive type semiconductor layer;

a first conductive type base region formed in a portion of a surface layer of said first conductive type semiconductor layer;

a second conductive type source region formed in self-alignment in a portion of a surface layer of said first conductive type base region;

a second conductive type drain drift region formed in a portion of the surface layer of said first conductive type semiconductor layer;

a trench, filled with a semi-insulating film, formed in a surface layer of said second conductive type drain drift region from a surface side thereof;

a second conductive type drain region formed in the surface layer of said first conductive type semiconductor layer on a side opposite to said first conductive type base region with respect to said trench and partially overlapping said second conductive type drain drift region;

a gate oxide film;

a gate electrode, extending over said trench, provided on an exposed surface portion of said first conductive type base region through said gate oxide film;

a source electrode provided on a surface of said second conductive type source region; and

a drain electrode provided on a surface of said second conductive type drain region.