Integrated semiconductor circuit with capacitors of precisely defined capacitance and process for producing the circuit
First Claim
1. An integrated semiconductor circuit, comprising;
- a first conductive layer;
a second conductive layer disposed on said first conductive layer;
said first conductive layer and said second conductive layer defining a first zone and a second zone;
said first zone having a capacitor disposed therein, said capacitor having capacitor electrodes being formed of said first conductive layer and said second conductive layer;
said second zone having circuit elements disposed therein;
a planarizing layer disposed between said first conductive layer and said second conductive layer in said second zone and a cover layer directly covering said planarizing layer, said planarizing layer and said cover layer insulating said first conductive layer and said second conductive layer from one another in said second zone; and
a dielectric being formed only of said cover layer between said capacitor electrodes in said first zone.
3 Assignments
0 Petitions
Accused Products
Abstract
An integrated semiconductor circuit, such as an A/D converter, includes a first zone having capacitors disposed therein. The capacitors have capacitor plates being formed of a first conductive layer and a second conductive layer. A second zone has circuit elements disposed therein. A planarizing layer and a cover layer insulate the first and second conductive layers from one another in the second zone, except for a possible peripheral region. A dielectric is formed only of the cover layer between the capacitor plates in the first zone, except for a possible peripheral region. A process for producing an integrated semiconductor circuit includes producing the first conductive layer; applying an insulating planarizing layer after producing the first conductive layer; removing the planarizing layer in the first zone until a surface of the first conductive layer is exposed, except for a possible peripheral region; applying an insulating cover layer over the entire surface; and producing the second conductive layer.
-
Citations
8 Claims
-
1. An integrated semiconductor circuit, comprising;
-
a first conductive layer; a second conductive layer disposed on said first conductive layer; said first conductive layer and said second conductive layer defining a first zone and a second zone; said first zone having a capacitor disposed therein, said capacitor having capacitor electrodes being formed of said first conductive layer and said second conductive layer; said second zone having circuit elements disposed therein; a planarizing layer disposed between said first conductive layer and said second conductive layer in said second zone and a cover layer directly covering said planarizing layer, said planarizing layer and said cover layer insulating said first conductive layer and said second conductive layer from one another in said second zone; and a dielectric being formed only of said cover layer between said capacitor electrodes in said first zone. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An A/D converter, comprising:
-
a first conductive layer; a second conductive layer disposed on said first conductive layer; said first conductive layer and said second conductive layer defining a first zone and a second zone; said first zone having a capacitor disposed therein, said capacitor having capacitor electrodes being formed of said first conductive layer and said second conductive layer; said second zone having circuit elements disposed therein; a planarizing layer disposed between said first conductive layer and said second conductive layer in said second zone and a cover layer directly covering said planarizing layer, said planarizing layer and said cover layer insulating said first conductive layer and said second conductive layer from one another in said second zone; and a dielectric being formed only of said cover layer between said capacitor electrodes in said first zone.
-
Specification