Plasma processing apparatus

• US 5,846,329 A
• Filed: 02/24/1997
• Issued: 12/08/1998
• Est. Priority Date: 02/23/1996
• Status: Expired due to Term

• Current Assignee: Tokyo OHKA Kogyo Company Limited
• Original Assignee: Tokyo OHKA Kogyo Company Limited
• Inventors: Sakamoto, Kaoru, Hori, Hisashi, Matsushita, Atsushi, Ohbuchi, Kazuto
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/805,062
• Time in Patent Office: 652 Days
• Field of Search: 118/723 R, 118/723 E, 118/723 ER, 118/723 I, 118/723 IR, 315/111.21, 315/111.31, 315/111.51, 156/345, 204/298.06, 204/298.14, 204/298.34
• US Class Current: 118/723.00E
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32541 Shape

Abstract

A plasma processing apparatus has first and second electrodes disposed around a tubular chamber for generating a plasma. Each of the first and second electrodes comprises a plurality of web-shaped electrode segments spaced by a constant distant and disposed substantially halfway around the chamber. Each of the web-shaped electrode segments has opposite ends fastened to a pair of respective insulators disposed diametrically opposite to each other across the chamber. The web-shaped electrode segments of the first electrode are electrically connected to each other by a conductor on one of the insulators, and the web-shaped electrode segments of the second electrode are electrically connected to each other by a conductor on the other conductors. The first electrode is connected to a high-frequency power supply, and the second electrode is connected to ground.

Claims

1. A plasma processing apparatus comprising:

a chamber having a substantially tubular shape with a closed upper end thereof;

a first electrode disposed on said chamber and connected to a high-frequency power supply;

a second electrode disposed on said chamber for generating a plasma between said second electrode and said first electrode, said second electrode being connected to ground or a power supply which supplies electric energy of a lower frequency than electric energy supplied by said high frequency power supply;

insulator means disposed outside of said chamber for having said electrodes secured thereto; and

conductor means mounted on said insulator means;

each of said first electrode and said second electrode comprising a plurality of web-shaped electrode segments, said web-shaped electrode segments of said first electrode and said web-shaped electrode segments of said second electrode being vertically alternately arranged in spaced relationship, each of said web-shaped electrode segments having opposite ends fastened to said insulator means, said web-shaped electrode segments of said first electrode being electrically connected to each other by said conductor means, and said web-shaped electrode segments of said second electrode being electrically connected to each other by said conductor means.

2. A plasma processing apparatus according to claim 1, wherein an uppermost one of said web-shaped electrode segments serves as said first electrode.

3. A plasma processing apparatus according to claim 1, further comprising a lowermost third electrode disposed on said chamber below said first and second electrodes and connected to ground.

4. A plasma processing apparatus according to claim 1, further comprising:

a base having an opening defined therein, said chamber having an open lower end mounted on said base in covering relationship to said opening; and

a table for supporting a workpiece to be processed, said table being vertically movably disposed in said opening.

5. A plasma processing apparatus according to 1, further comprising:

a reaction gas inlet tube connected to an upper portion of said chamber.

6. A plasma processing apparatus according to claim 1, wherein said insulator means comprises a pair of insulators, said conductor means comprises a pair of conductors, each of said web-shaped electrode segments is disposed substantially halfway around said chamber and said opposite ends thereof are fastened to said insulators, respectively, said web-shaped electrode segments of said first electrode being connected to each other by one of said conductors, and said web-shaped electrode segments of said second electrode being connected to each other by the other of said conductors.

7. A plasma processing apparatus according to claim 1, wherein said insulator means comprises a single insulator, said conductor means comprises a pair of conductors mounted on said single insulator, each of said web-shaped electrode segments being disposed substantially fully around said chamber and having opposite ends fastened to said single insulator, said web-shaped electrode segments of the first electrode being electrically connected to each other by one of said conductors, and said web-shaped electrode segments of said second electrode being electrically connected to each other by the other of said conductors.

8. A plasma processing apparatus according to claim 7, further comprising a lowermost third electrode disposed on said chamber below said first and second electrodes and connected to ground.

9. A plasma processing apparatus comprising:

a chamber having a substantially tubular shape with a closed upper end thereof;

a pair of first and second electrodes helically wound around said chamber and spaced from each other by a constant gap;

insulator means disposed outside of said chamber; and

conductor means mounted on said insulator means;

each of said first electrode and said second electrode comprising a plurality of web-shaped electrode segments each having opposite ends fastened to said insulator means, said web-shaped electrode segments of said first electrode being electrically connected to each other by said conductor means, and said web-shaped electrode segments of said second electrode being electrically connected to each other by said conductor means.

10. A plasma processing apparatus according to claim 9, wherein said first electrode is connected to a high-frequency power supply, and said second electrode is connected to a power supply which supplies electric energy of a lower frequency than electric energy supplied by said high-frequency power supply.

11. A plasma processing apparatus according to claim 9, wherein said first electrode is connected to a high-frequency power supply, and said second electrode is connected to ground.

12. A plasma processing apparatus according to claim 9, wherein each of said first electrode and said second electrode has an end connected to a high-frequency power supply, and an opposite end connected to ground or a power supply which supplies electric energy of a lower frequency than electric energy supplied by said high-frequency power supply.

13. A plasma processing apparatus according to claim 9, wherein said insulator means comprises a pair of insulators, said conductor means comprises a plurality of conductors, each of said web-shaped electrode segments is disposed substantially halfway around said chamber and has opposite ends fastened to said insulators, said web-shaped electrode segments of said first electrode being electrically connected to each other by a first group of said conductors, and said web-shaped electrode segments of said second electrode being electrically connected to each other by a second group of said conductors.

14. A plasma processing apparatus according to claim 9, wherein said insulator means comprises a single insulator, said conductor means comprises a plurality of conductors, each of said web-shaped electrode segments is disposed substantially fully around said chamber and has opposite ends fastened to said single insulator, said web-shaped electrode segments of said first electrode being electrically connected to each other by a first group of said conductors, and said web-shaped electrode segments of said second electrode being electrically connected to each other by a second group of said conductors.

15. A plasma processing apparatus according to claim 9, further comprising:

a base having an opening defined therein, said chamber having an open lower end mounted on said base in covering relationship to said opening; and

a table for supporting a workpiece to be processed, said table being vertically movably disposed in said opening.

16. A plasma processing apparatus according to claim 9, further comprising:

a reaction gas inlet tube connected to an upper portion of said chamber.

17. A plasma processing apparatus comprising:

a chamber having a substantially tubular shape with a closed upper end thereof;

an electrode helically wound around said chamber and comprising a plurality of web-shaped electrode segments spaced by a constant gap and disposed substantially halfway around said chamber;

a pair of insulators disposed outside of said chamber; and

a plurality of conductors mounted on said insulators;

each of said web-shaped electrode segments having opposite ends fastened to said insulators, said web-shaped electrode segments being electrically connected through said conductors to form said electrode.

18. A plasma processing apparatus according to claim 17, wherein said electrode has an end connected to a high-frequency power supply, and an opposite end connected to ground or a power supply which supplies electric energy of a lower frequency than electric energy supplied by said high-frequency power supply.

19. A plasma processing apparatus according to claim 18, wherein said end connected to said high-frequency power supply comprises an upper end of said electrode.

20. A plasma processing apparatus according to claim 17, further comprising:

a base having an opening defined therein, said chamber having an open lower end mounted on said base in covering relationship to said opening; and

a table for supporting a workpiece to be processed, said table being vertically movably disposed in said opening.

21. A plasma processing apparatus according to claim 17, further comprising: