Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment

• US 5,846,375 A
• Filed: 09/26/1996
• Issued: 12/08/1998
• Est. Priority Date: 09/26/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Gilchrist, Robin, Wilhoit, Michael S.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/721,365
• Time in Patent Office: 803 Days
• Field of Search: 118/724, 118/725, 118/728, 118/723 E, 156/345, 165/80.1, 165/80.5, 165/80.2, 165/80.3, 165/80.4, 361/234
• US Class Current: 156/345.52
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A temperature control system to selectively control the temperature of specific areas of the chuck or electrode plate upon which a wafer is mounted during plasma etching, chemical vapor deposition and other such temperature dependent processes for the purpose of ultimately controlling the temperature of the semiconductor wafer. The temperature control system includes a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops. Each conduit is connected to its own inlet and outlet to allow a heating or cooling agent to flow independently through each conduit.

Claims

1. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode; and

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops.

2. A device according to claim 1, wherein the loops are circular.

3. A device according to claim 1, wherein the loops are elliptical.

4. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode; and

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and

e. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.

5. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode;

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops;

e. an inlet port connected to the reaction chamber for introducing materials into the reaction chamber; and

f. an exhaust port connected to the reaction chamber for exhausting materials from the chamber.

6. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode; and

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and

e. a source of a.c. voltage operatively coupled to one of the electrodes for applying an a.c. voltage between the first and second electrodes.

7. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode; and

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and

e. a plurality of supply mechanisms for supplying a cooling agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.

8. A plasma type semiconductor processing device, comprising:

a. a reaction chamber;

b. a first electrode in the reaction chamber, the first electrode having a surface to which a semiconductor wafer is mounted during processing;

c. a second electrode disposed opposite the first electrode; and

d. a plurality of conduits embedded in the first electrode and arranged about the center of the first electrode as a series of concentric radially adjacent loops; and

e. a plurality of supply mechanisms for supplying a heating agent to each of the conduits, respective ones of the supply mechanisms being operatively coupled to respective ones of the conduits.

9. A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops.

10. A temperature control system according to claim 9, wherein the loops are circular.

11. A temperature control system according to claim 9, wherein the loops are elliptical.

12. A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising a plurality of conduits embedded in the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.

13. A temperature control system for regulating the temperature of a chuck used to hold a wafer in semiconductor processing equipment, the temperature control system comprising:

a. a plurality of conduits arranged about the center of the chuck as a series of concentric radially adjacent loops; and

b. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.

14. A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising:

a. a generally disc shaped body to which the wafer is mounted during processing; and

b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops.

15. A chuck according to claim 14, wherein the loops are circular.

16. A chuck according to claim 14, wherein the loops are elliptical.

17. A chuck for holding a semiconductor wafer in semiconductor processing equipment, the chuck comprising:

a. a generally disc shaped body to which the wafer is mounted during processing;

b. a plurality of conduits embedded in the body of the chuck and arranged about the center of the chuck as a series of concentric radially adjacent loops; and

c. a plurality of inlets and outlets for allowing a heating or cooling agent to flow through the conduits, respective ones of the inlets and outlets being connected to respective ones of the conduits.