Method for producing group III nitride compound semiconductor substrates using ZnO release layers

• US 5,846,844 A
• Filed: 02/07/1996
• Issued: 12/08/1998
• Est. Priority Date: 11/29/1993
• Status: Expired due to Fees

• Current Assignee: Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu, Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu, Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Detchprohm, Theeradetch, Amano, Hiroshi, Akasaki, Isamu, Hiramatsu, Kazumasa
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Radomsky, Leon
• Application Number:
  US08/598,134
• Time in Patent Office: 1,035 Days
• Field of Search: 148/33.4, 148/DIG. 135, 148/33.5, 148/DIG. 65, 148/DIG. 100, 148/DIG. 113, 437/21, 437/84, 437/86, 437/110, 437/133, 437/944, 437/974, 216/40, 117/915, 117/922, 117/952, 156/636.1
• US Class Current: 438/24
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: Y10S 117/915 Separating from substrate
• CPC Class Codes: Y10S 148/065 Gp III-V generic compounds-processing
• CPC Class Codes: Y10S 148/113 Nitrides of boron or aluminum or gallium
• CPC Class Codes: Y10S 148/135 Removal of substrate

Abstract

A nitrogen-group III compound semiconductor satisfying the formula Al_x Ga_y In_1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al_x Ga_y In_1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

Claims

1. A method for producing a semiconductor comprising the steps of:

forming an intermediate zinc oxide (ZnO) layer on a sapphire substrate, said immediate ZnO layer having a thickness of about 10 nm to 1 μ

m;

forming a semiconductor substrate on said intermediate ZnO layer, said semiconductor substrate being made of a nitrogen-group III compound satisfying the formula Al_x Ga_y In_l-x-y N, inclusive of x=0, y=0 and x=y=0;

etching said intermediate ZnO layer with etching liquid capable of selectively etching ZnO so that the ZnO layer is substantially removed from between the semiconductor substrate and the sapphire substrate;

separating said semiconductor substrate from said sapphire substrate by said etching; and

epitaxially growing a semiconductor layer made of nitrogen-group III compound satisfying the formula Al_x Ga_y In_1-x-y N, inclusive of x=0, y=0 and x=y=0 on said semiconductor substrate.

2. The method of claim 1, wherein said semiconductor layer comprises at least an n-type nitrogen-group III compound semiconductor satisfying the formula Al_x Ga_y In_1-x-y N, inclusive of x=0, y=0 and x=y=0, and a p-type nitrogen-group III compound semiconductor satisfying the formula Al_x Ga_y In_1-x-y N, inclusive of x=0, y=0 and x=y=0.

3. The method of claim 1, wherein said semiconductor substrate includes gallium nitride.

4. The method of claim 1, wherein said ZnO layer is formed on said sapphire substrate by RF sputtering ZnO.