Process for removing titanium nitride layer in an integrated circuit

• US 5,846,880 A
• Filed: 05/16/1996
• Issued: 12/08/1998
• Est. Priority Date: 04/28/1995
• Status: Expired due to Term

• Current Assignee: Vanguard International Semiconductor Corporation
• Original Assignee: Vanguard International Semiconductor Corporation
• Inventors: Lee, Ching-Ying
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US08/690,302
• Time in Patent Office: 936 Days
• Field of Search: 438/720, 438/648, 438/626, 438/631, 438/688, 438/694, 438/697, 438/706, 438/712, 438/669, 438/738, 438/754, 438/725, 438/636, 438/637
• US Class Current: 438/669
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics

Abstract

A process has been developed for removing an anti-reflective coating of titanium nitride from the surface of an aluminum layer that has been covered by a dielectric layer. Previously, this was achieved by coating said titanium nitride layer (together with the aluminum layer) with the dielectric layer and then using a single etching process to form both via holes through the dielectric and to remove the titanium nitride. When this process is used, etching proceeds reasonably quickly through the dielectric layer but becomes extremely slow once the titanium nitride is reached. In the process of the present invention, the titanium nitride layer is rapidly removed (prior to application of the dielectric layer) using a more powerful etchant. The titanium nitride/titanium layer that underlies the aluminum layer is protected during this rapid etching phase by means of a layer of a spin-on glass.

Claims

1. A process for removing a first layer of titanium nitride, said first layer of titanium nitride covering a metal layer which covers a second layer of titanium nitride, within an integrated circuit, comprising:

depositing a layer of a spin-on glass over said first titanium nitride layer to a thickness greater than that of said first titanium nitride layer and of all layers that underlie it;

etching back said layer of spin-on glass for long enough for the first titanium nitride layer to become fully exposed, while still leaving said layer of spin-on-glass in place to prevent any undercutting of the second titanium nitride layer; and

removing said first layer of titanium nitride in a manner such that said metal layer underlying it is exposed and not removed.

2. The process of claim 1 wherein said layer of titanium nitride serves the function of an anti-reflective coating.

3. The process of claim 1 wherein said spin-on glass is Allied Signal Siloxane type 211.

4. The process of claim 1 wherein the layer immediately underlying said layer of titanium nitride comprises aluminum or titanium.

5. The process of claim 1 wherein the thickness of said layer of titanium nitride is between 200 and 500 Angstrom units.

6. The process of claim 1 wherein the removal of said layer of spin-on glass comprises etching in a mix of CF₄ and CHF₃ gases in argon for between 0.3 and 1 minutes at a temperature between 0°

and 30°

C. and a pressure between 200 and 400 torr.

7. The process of claim 1 wherein the removal of said layer of titanium nitride comprises etching in a mix of carbon tetrafluoride, oxygen, and nitrogen for between 0.3 and 0.5 minutes at a temperature between 250°

and 450°

C. and a pressure between 1.5 and 4 torr.

16. The process of claim 1 wherein the thickness of said layer of aluminum is between 4,000 and 6,000 Angstrom units.

8. A process for forming an inter-metal dielectric layer over, and then making electrical contact to, an aluminum layer, within an integrated circuit, which has been previously over and under coated with first and second layers respectively of titanium nitride, comprising:

depositing a layer of spin-on glass over said integrated circuit;

etching said layer of spin-on glass for long enough for the first titanium nitride layer to become fully exposed, while still leaving said layer of spin-on-glass in place to prevent any undercutting of said second layer of titanium nitride;

removing said first layer of titanium nitride;

coating said integrated circuit with a layer of dielectric material to a thickness sufficient to cover the surface of the integrated circuit;

etching via holes through said layer of dielectric material wherever electrical contact with said aluminum layer is required;

forming a conductive layer on said dielectric layer, including the bottoms and sides of said via holes; and

patterning said conductive layer to provide electrical connections to other parts of the integrated circuit.

9. The process of claim 8 wherein said layer of titanium nitride serves the function of an anti-reflective coating.

10. The process of claim 8 wherein the thickness of said layer of titanium nitride is between 200 and 500 Angstrom units.

11. The process of claim 8 wherein the removal of said layer of spin-on glass comprises etching in a mixture of CF₄ and CHF₃ gases in argon for between 0.3 and 1 minutes at a temperature between 0°

and 30°

C. and a pressure between 200 and 400 torr.

12. The process of claim 8 wherein the removal of said layer of titanium nitride comprises etching in a mix of carbon tetrafluoride, oxygen, and nitrogen for between 0.3 and 0.5 minutes at a temperature between 250°

and 450°

C. and a pressure between 1.5 and 4 torr.

13. The process of claim 8 wherein said layer of spin-on glass comprises Allied Signal Siloxane type 211 SOG formed by spin coating followed by baking and curing in nitrogen.

14. The process of claim 8 wherein the thickness of said layer of spin-on glass and said dielectric layer total between 15,000 and 18,000 Angstrom units.

15. The process of claim 8 wherein said dielectric layer comprises a second layer of spin-on glass.