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Semiconductor electro-optical device

  • US 5,847,410 A
  • Filed: 11/25/1996
  • Issued: 12/08/1998
  • Est. Priority Date: 11/24/1995
  • Status: Expired due to Term
First Claim
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1. An electro-optical device comprising a pixel portion having a thin film transistor using silicon as a semiconductor layer and a pixel electrode connected to the thin film transistor,wherein said pixel electrode comprises a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film disposed on the first transparent electrically conductive film,said first transparent electrically conductive film comprises an oxide layer of a first metal having an oxidation potential lower than that of silicon, andsaid second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon.

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