Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same

• US 5,848,088 A
• Filed: 11/26/1997
• Issued: 12/08/1998
• Est. Priority Date: 07/11/1995
• Status: Expired due to Term

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki, Mori, Katsumi, Kaneko, Takeo
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): Leung, Quyen Phan
• Application Number:
  US08/979,945
• Time in Patent Office: 377 Days
• Field of Search: 372/45, 372/46, 372/50, 372/96, 372/99, 438/24, 438/34, 438/39
• US Class Current: 372/50.21
• CPC Class Codes: H01S 5/0208 Semi-insulating substrates
• CPC Class Codes: H01S 5/0262 Photo-diodes, e.g. transceiver devices, bidirectional devices H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials

Abstract

A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 μm, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 μm after etching.

Claims

1. A surface emission type semiconductor laser having an optical detector, comprising:

a semiconductor substrate having first and second regions formed therein;

a first conducting semiconductor layer formed on each of said first and second regions;

a second conducting semiconductor layer formed on each of said first and second regions of said first conducting semiconductor layer; and

an optical resonator formed on said second conducting semiconductor layer on said first region, and said optical resonator emitting light in a direction perpendicular to said semiconductor substrate;

wherein said second conducting semiconductor layer on said first region has a thickness of at least 1 μ

m, and is used as a lower electrode for supplying a current to said optical resonator; and

said first and second conducting semiconductor layers form at least one photodiode on said second region, and said second conducting semiconductor layer forming said at least one photodiode has a thickness of less than 1 μ

m.

2. The surface emission type semiconductor laser according to claim 1, wherein said second conducting semiconductor layer on said first region has a thickness of less than or equal to 5 μ

m.

3. The surface emission type semiconductor laser according to claim 2, wherein said second conducting semiconductor layer on each of said first and second regions has the carrier concentration from 5×

10¹⁷ to 2×

10¹⁹ cm^-3.

4. The surface emission type semiconductor laser according to claim 1, wherein said second conducting semiconductor layer on said first region has a thickness ranging from 2 μ

m to 3 μ

m.

5. The surface emission type semiconductor laser according to claim 4, wherein said second conducting semiconductor layer on each of said first and second regions has the carrier concentration from 1×

10¹⁸ to 1×

10¹⁹ cm^-3.

6. The surface emission type semiconductor laser according to claim 1, wherein said second conducting semiconductor layer on said second region has a thickness of less than or equal to 0.8 μ

m.

7. The surface emission type semiconductor laser according to claim 1, wherein said second conducting semiconductor layer on said second region has a thickness of less than or equal to 0.5 μ

m.

8. The surface emission type semiconductor laser according to claim 1, wherein said optical resonator comprises:

a pair of reflecting mirrors, and

a multilayer semiconductor layer including at least an active layer and a cladding layer, said multilayer semiconductor layer being formed between said pair of reflecting mirrors; and

wherein an upper layer of said multilayer semiconductor layer including at least said cladding layer forms a pillar portion;

an insulating layer is embedded in the periphery of said pillar portion;

an upper electrode is provided having an opening formed therein at the end surface of said pillar portion; and

one of said pair of mirrors being on the light emitting side is formed to cover said opening.

9. The surface emission type semiconductor laser according to claim 8, wherein one of said pair of reflecting mirrors formed on said second conducting semiconductor layer is a semiconductor multilayer mirror, and another of said pair of reflecting mirrors on the light emitting side is a dielectric multilayer mirror;

and

wherein said multilayer semiconductor layer formed between said pair of reflecting mirrors includes;

a first cladding layer formed on said semiconductor multilayer mirror;

an active layer of quantum well structure formed on said first cladding layer;

a second cladding layer formed on said active layer; and

a contact layer formed on said second cladding layer;

and wherein said second cladding layer and said contact layer form said pillar portion.

10. The surface emission type semiconductor laser according to claim 1, wherein said first conducting semiconductor layer on said first region and said first conducting semiconductor layer on said second region are electrically insulated;

and

said second conducting semiconductor layer on said first region and said second conducting semiconductor layer on said second region are electrically insulated.

11. A sensor having the surface emission type semiconductor laser having an optical detector according to claim 10,

wherein said optical resonator irradiates a relocatable measurement target object with laser beam, and laser beam reflected on said measurement target object impinges on said at least one photodiode, so as to detect the position of said measurement target object.

12. The sensor according to claim 11:

wherein a plurality of said photodiodes are irradiated with said reflected laser beam emitted by said optical resonator so as to detect said position of said measurement target object based on the distribution of light amounts detected by each of said plurality of photodiodes.

13. A sensor having the surface emission type semiconductor laser having an optical detector according to claim 10,

wherein said optical resonator irradiates an element whose position changes according to an applied pressure with laser beam, laser beam reflected on said measurement target object impinges on said at least one photodiode, so as to detect the magnitude of the pressure applied to said element.

14. The sensor according to claim 13, wherein a plurality of said photodiodes are irradiated with said reflected laser beam emitted by said optical resonator so as to detect said magnitude of the pressure applied to said element.

15. The surface emission type semiconductor laser according to claim 1, wherein said optical resonator comprises:

a pair of reflecting mirrors; and

a multilayer semiconductor layer including at least an active layer and a cladding layer, said multilayer semiconductor layer being formed between said pair of reflecting mirrors; and

wherein said pair of reflecting mirrors are semiconductor multilayer mirrors;

one of said pair of semiconductor multilayer mirrors being on the light emitting side forms a pillar portion, and an upper electrode is provided having an opening formed therein at the end surface of said pillar portion.

16. The surface emission type semiconductor laser according to claim 15, wherein at least one of said multilayer semiconductor layer forming said semiconductor multilayer mirror on said light emitting side is a ring-shaped current constricting layer.

17. The surface emission type semiconductor laser according to claim 16, wherein said current constricting layer is formed within said multilayer semiconductor layer comprising said semiconductor multilayer mirror on the light emitting side in the range from 0.2 μ

m to 1.5 μ

m from said active layer.

18. The surface emission type semiconductor laser according to claim 17, wherein said current constricting layer is formed within said pillar portion.

19. A method of manufacturing a surface emission type semiconductor laser having an optical detector wherein a surface emission type semiconductor laser is formed on a first region of a semiconductor substrate, and at least one photodiode is formed on a second region of said semiconductor substrate, comprising the steps of:

(a) successively epitaxially growing on each of said first and second regions a first conducting semiconductor layer, a second conducting semiconductor layer having a thickness of at least 1 μ

m, and an optical resonator formed from a pair of reflecting mirrors and a multilayer semiconductor layer formed therebetween excluding the reflecting mirror on the emission side;

(b) etching an upper layer of said multilayer semiconductor layer including at least a cladding layer to form a pillar portion on said first region of said epitaxial growth layers;

(c) embedding an insulating layer in the periphery of said pillar portion;

(d) forming an upper electrode having an opening formed therein at the end surface of said pillar portion;

(e) forming the mirror on the light emitting side to cover said opening; and

(f) etching said epitaxial growth layer in said second region, said etching step is terminated leaving a part of said second conducting semiconductor layer so that said second conducting semiconductor layer on said second region has a thickness of less than 1 μ

m.

20. The method according to claim 19, wherein in said step (a) said second conducting semiconductor layer has the carrier concentration ranging from 5×

10¹⁷ to 2×

10¹⁹ cm^-3 and a thickness of less than or equal to 5 μ

m.

21. The method according to claim 19, wherein in said step (a) said second conducting semiconductor layer has the carrier concentration ranging from 1×

10¹⁸ to 1×

10¹⁹ cm^-3 and a thickness of between 2 μ

m and 3 μ

m.

22. The method according to claim 19, wherein in step (f) said second conducting semiconductor layer on said second region has a thickness of less than or equal to 0.8 μ

m.

23. The method according to claim 19, wherein in step (f) said second conducting semiconductor layer on said second region has a thickness of less than or equal to 0.5 μ

m.

24. The method according to claim 19, wherein in step (a) during the epitaxial growth of at least said second conducting semiconductor layer and said mirror thereon, light of a predetermined wavelength is irradiated at said second conducting semiconductor layer and said mirror thereon, the reflected spectrum is detected, and the reflectance profile is measured to control the thickness of said second conducting semiconductor layer and said mirror thereon.

25. The method according to claim 19, wherein in step (f) during the etching of at least said second conducting semiconductor layer and said mirror thereon, light of a predetermined wavelength is irradiated at said second conducting semiconductor layer and said mirror thereon, the reflected spectrum is detected, and the reflectance profile is measured to control the etching amount of said second conducting semiconductor layer and said mirror thereon.

26. The method according to claim 19, further comprising:

a step of electrically insulating said first conducting semiconductor layer on said first region from said first conducting semiconductor layer on said second region, and said second conducting semiconductor layer on said first region from said second conducting semiconductor layer on said second region.

27. A method of manufacturing a surface emission type semiconductor laser having an optical detector wherein a surface emission type semiconductor laser is formed on a first region of a semiconductor substrate, and at least one photodiode is formed on a second region of said semiconductor substrate, comprising the steps of:

(a) successively epitaxially growing on each of said first and second regions a first conducting semiconductor layer, a second conducting semiconductor layer having a thickness of at least 1 μ

m, a semiconductor multilayer mirror, a first cladding layer, an active layer of quantum well structure, a second cladding layer, and a contact layer;

(b) etching said epitaxial growth layers in said first region, said etching step is terminated leaving a part of said second cladding layer to form a pillar portion formed by said second cladding layer and said contact layer;

(c) embedding an insulating layer in the periphery of said pillar portion;

(d) forming an upper electrode having an opening formed therein at the end surface of said pillar portion;

(e) forming a dielectric multilayer mirror to cover said opening; and

(f) etching said epitaxial growth layer in said second region, said etching step is terminated leaving a part of said second conducting semiconductor layer so that said second conducting semiconductor layer on said second region has a thickness of less than 1 μ

m.

28. A method of manufacturing a surface emission type semiconductor laser having an optical detector, wherein a surface emission type semiconductor laser is formed on a first region of a semiconductor substrate, and at least one photodiode is formed on a second region of said semiconductor substrate, comprising the steps of:

(a) successively epitaxially growing on each of said first and second regions a first conducting semiconductor layer, a second conducting semiconductor layer having a thickness of at least 1 μ

m, a pair of reflecting mirrors and a multilayer semiconductor layer formed therebetween;

(b) etching one of said pair of reflecting mirrors being on the light emitting side to form a pillar portion on said first region of said epitaxial growth layers;

(c) forming an insulating layer in the periphery of said pillar portion;

(d) forming an upper electrode having an opening formed therein at the end surface of said pillar portion; and

(e) etching said epitaxial growth layer in said second region, said etching step is terminated leaving a part of said second conducting semiconductor layer so that said second conducting semiconductor layer on said second region has a thickness of less than 1 μ

m.

29. The method according to claim 28, wherein:

in said step (b) said one of said pair of reflecting mirrors being on the light emitting side is etched by using an electron cyclotron resonance-reactive ion beam etching system which uses a gas being a mixture of chlorine gas and argon gas; and

in said step (e) said epitaxial growth layer in said second region is etched by using an inductively coupled plasma etching system which uses a gas being a mixture of chlorine gas and argon gas.