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High frequency semiconductor wafer processing apparatus and method

  • US 5,849,136 A
  • Filed: 11/22/1996
  • Issued: 12/15/1998
  • Est. Priority Date: 10/11/1991
  • Status: Expired due to Term
First Claim
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1. A plasma process apparatus comprising:

  • a plasma reactor having a powered electrode on which a wafer is to be placed for processing;

    a single rf power supply that produces power at a single rf frequency f in the range greater than 13.56 MHz and up to 200 MHz connected to said powered electrode, said frequency f selected so as to optimize a wafer process to be carried out in said reactor.

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