Process for formation of epitaxial film

• US 5,849,163 A
• Filed: 06/06/1995
• Issued: 12/15/1998
• Est. Priority Date: 12/15/1989
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Ichikawa, Takeshi, Mizutani, Hidemasa
• Primary Examiner(s): Nguyen, Nam
• Application Number:
  US08/468,233
• Time in Patent Office: 1,288 Days
• Field of Search: 204/192.12, 204/192.23, 204/192.3, 204/192.15, 204/298.06, 204/298.08
• US Class Current: 204/192.23
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: C30B 23/002 Controlling or regulating
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 23/08 by condensing ionised vapours by reactive sputtering C30B25/06
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: C30B 29/36 Carbides

Abstract

A process for forming an epitaxial film on a biased substrate by sputtering a target to which a bias voltage and a plasma-generating high-frequency power are applied, wherein the film formation is carried out in an atmosphere having H₂ O, CO and CO₂ partial pressures controlled at 1.0×10^-8 Torr, with the substrate temperature maintained in the range of from 400° to 700° C. The epitaxial film obtained by the process has excellent interface characteristics, very low impurity contents, good crystallinity and excellent step coverage, and is suitable for application to semiconductor devices.

Claims

1. A process for forming a silicon-containing epitaxial film on a substrate arranged in a film-forming space by a sputtering method comprising the steps of:

(a) introducing into said film-forming space containing said substrate therein a plasma-generating raw process gas containing 1 ppm or less of each of H₂ O, CO and CO₂ ;

(b) controlling the partial pressure of each of said H₂ O, CO and CO₂ to a value of 1.0×

10^-8 Torr or less and the sum of the partial pressures of said H₂ O, CO and CO₂ to a value of 1.0×

10^-8 Torr or less in the gaseous atmosphere in said film-forming space;

(c) maintaining said substrate at a temperature in the range of 400°

to 700°

C.;

(d) applying a DC voltage to a silicon-containing target arranged in said film-forming space while simultaneously applying a plasma-generating high frequency power to said silicon containing target, to produce plasma in said film forming space, wherein said silicon-containing target is sputtered by said plasma to cause the formation of said silicon-containing epitaxial film on said substrate.

2. The process for forming an epitaxial film according to claim 1, wherein a high-frequency power is applied also to the substrate.

3. The process for forming an epitaxial film according to claim 2, wherein the high-frequency power to be applied to the substrate has a frequency higher than that of the high-frequency power to be applied to the target.

4. A process for forming a silicon-containing epitaxial film on a substrate arranged in a film-forming space by a sputtering method said process comprising the steps of:

(a) introducing into said film-forming space containing said substrate therein a plasma-generating process gas containing 1 ppm or less of each of H₂ O, CO and CO₂ ;

(b) controlling the partial pressure of each of said H₂ O, CO and CO₂ to a value of 1.0×

10^-8 Torr or less and the sum of the partial pressures of said H₂ O, CO and CO₂ to a value of 1.0×

10^-8 Torr or less in the gaseous atmosphere in said film-forming space;

(c) maintaining said substrate at a temperature in the range of 400°

to 700°

C.;

(d) applying a DC voltage to a silicon-containing target arranged in said film-forming space while simultaneously applying a plasma-generating high frequency power to said silicon-containing target and a high frequency power of a frequency higher than that of said plasma-generating high frequency power to said substrate, to produce plasma in said film-forming space, wherein said silicon-containing target is sputtered by said plasma to cause the formation of said silicon-containing epitaxial film on said substrate.

5. A process for forming a silicon-containing epitaxial film on a substrate arranged in a film-forming space by a sputtering method, said process comprising the steps of:

(a) introducing a plasma-generating raw process gas whose content of each of H₂ O, CO, and CO₂ being 1 ppm or less into said film-forming space containing said substrate therein;

(b) controlling the gaseous atmosphere in said film-forming space to have a vacuum, wherein a partial pressure of each of said H₂ O, CO, and CO₂ is 1.0×

10^-8 or less, and the sum of the partial pressures of said H₂ O, CO, and CO₂ is 1.0×

10^-8 or less;

(c) maintaining said substrate at a temperature in the range of 400°

to 700°

C.; and

(d) applying a DC voltage to a silicon-containing target arranged in said film-forming space while simultaneously applying a plasma-generating high frequency power to said silicon-containing target to produce plasma in said film-forming space, wherein said silicon-containing target is sputtered by said plasma to cause the formation of said silicon-containing epitaxial film on said substrate.

6. The process according to claim 5, wherein a high frequency power is also applied to the substrate.

7. The process according to claim 6, wherein the high frequency power applied to the substrate has a frequency which is greater than that of the high frequency power applied to the silicon-containing target.