Method of forming thin film resistors on organic surfaces

• US 5,849,623 A
• Filed: 05/23/1997
• Issued: 12/15/1998
• Est. Priority Date: 12/05/1994
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Rose, James Wilson, Wojnarowski, Robert John, Paik, Kyung Wook, Gdula, Michael
• Primary Examiner(s): Nguyen, Tuan H.
• Application Number:
  US08/862,672
• Time in Patent Office: 571 Days
• Field of Search: 438/238, 438/382, 438/381, 438/384, 148/DIG. 136
• US Class Current: 438/382
• CPC Class Codes: H01C 1/032 plural layers surrounding the resistive element H01C1/028 takes precedence
• CPC Class Codes: H01C 17/075 by thin film techniques H01C17/20 takes precedence
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/82039 using a laser
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H05K 1/0268 for electrical inspection or testing
• CPC Class Codes: H05K 1/167 incorporating printed resistors
• CPC Class Codes: H05K 2201/0317 Thin film conductor layer; Thin film passive component
• CPC Class Codes: H05K 2203/0361 Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
• CPC Class Codes: H05K 2203/171 Tuning, e.g. by trimming of printed components or high frequency circuits
• CPC Class Codes: H05K 3/388 by the use of a metallic or inorganic thin film adhesion layer
• CPC Class Codes: Y10S 148/136 Resistors
• CPC Class Codes: Y10T 29/49101 Applying terminal

Abstract

A method for fabricating a thin film resistor comprises applying a tantalum nitride layer over a dielectric layer, applying a metallization layer over the tantalum nitride layer, and patterning the metallization layer with a first portion of the metallization layer situated apart from a second portion of the metallization layer and both the first and second portions being at least partially situated on the tantalum nitride layer. In one embodiment, after patterning the metallization layer, the resistance value between the first and second portions of the metallization layer is determined and compared to a predetermined resistance value, and at least one of the first and second portions is trimmed to obtain a modified resistance value between the first and second portions that is closer to the predetermined resistance value than the determined resistance value.

Claims

1. A method for fabricating a thin film resistor, comprising the steps of:

applying a tantalum nitride layer over an organic dielectric layer;

applying a metallization layer over the tantalum nitride layer;

patterning the metallization layer with a first portion of the metallization layer situated apart from a second portion of the metallization layer and both the first and second portions being at least partially situated on the tantalum nitride layer;

determining a resistance value between the first and second portions of the metallization layer;

comparing the determined resistance value with a predetermined resistance value; and

etching at least one of the first and second portions to obtain a modified resistance value between the first and second portions that is closer to the predetermined resistance value than the determined resistance value.

2. The method of claim 1, further including the step of patterning the tantalum nitride layer prior to applying the metallization layer.

3. The method of claim 1, further including, after patterning the metallization layer, stabilizing the resistance of the tantalum nitride layer by heating the tantalum nitride and metallization layer.

4. The method of claim 1, wherein applying the tantalum nitride layer over the dielectric layer comprises the steps of positioning the dielectric layer in a tantalum sputtering chamber under low pressure conditions and using a gas mixture ranging from 13%-17% N2 gas and from 83%-87% argon gas to sputter tantalum nitride in the hexagonal close packed phase on the dielectric layer.

5. The method of claim 1, further including:

applying an additional dielectric layer over the metallization layer;

applying an additional tantalum nitride layer over the additional dielectric layer;

applying an additional metallization layer over the additional tantalum nitride layer and

patterning the additional metallization layer with a first additional portion of the additional metallization layer situated apart from a second additional portion of the additional metallization layer and both the first and second additional portions being at least partially situated on the additional tantalum nitride layer.