Electrostatically force balanced silicon accelerometer

• US 5,850,042 A
• Filed: 12/08/1995
• Issued: 12/15/1998
• Est. Priority Date: 07/26/1993
• Status: Expired due to Term

• Current Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: Litton Systems Incorporated
• Inventors: Warren, Keith O.
• Primary Examiner(s): Oda, Christine K.
• Application Number:
  US08/569,356
• Time in Patent Office: 1,103 Days
• Field of Search: 73/510, 73/718, 73/504.04, 73/514.13, 73/514.21, 73/514.23, 73/514.24, 73/514.32, 73/514.36, 73/514.37, 73/514.38
• US Class Current: 73/514.36
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate by ion implantation and the formation of an oxide support layer below the proofmass, subsequently integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates; and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material where the hinge is structurally mounted to the substrates.

Claims

1. A solid state accelerometer comprising:

a proofmass formed from two complementary portions bonded together;

a surrounding substrate;

at least one hinge connecting said proofmass with said surrounding substrate; and

a gap located between said proofmass and said surrounding substrate;

wherein said proofmass has a first doping concentration and said surrounding substrate has a second doping concentration and includes at least one oxide channel; and

wherein at least two regions of said substrate have a third doping concentration;

said third doping concentration formed of a different type of doped semiconductor from said first doping concentration and said second doping concentration, said region having said third doping concentration being located substantially adjacent to and coplanar with said proofmass.

2. A solid state accelerometer as defined in claim 1 wherein said accelerometer is formed of a single body of continuous crystalline semiconductor material.

3. A solid state accelerometer as defined in claim 1 wherein each of said two complementary portions and said substrate structures are formed of a single unitary body of semiconductor material.

4. A solid state accelerometer comprising:

a proofmass formed from two complementary portions bonded together;

a surrounding substrate;

at least one hinge connecting said proofmass with said surrounding substrate;

a gap located between said proofmass and said surrounding substrate;

wherein said proofmass has a first doping concentration and said surrounding substrate has a second doping concentration; and

wherein at least one slot extends along the proofmass allowing gas to pass through the slot when the proofmass moves.

5. A solid state accelerometer comprising:

a proofmass formed from two complementary portions bonded together;

a proofmass surrounding substrate surrounding said proofmass;

at least one hinge connecting said proofmass with said surrounding substrate;

said proofmass, said hinge and said surrounding substrate being formed of an integral body of semiconductor material;

wherein said proofmass has a first doping concentration and said surrounding substrate has a second doping concentration; and

wherein said proofmass includes at least one slot.

6. A solid state accelerometer as defined in claim 5 wherein said proofmass has a first doping concentration and said surrounding substrate has a second doping concentration and further comprising at least one oxide channel;

at least two regions of said substrate having a third doping concentration, said third doping concentration formed of a different type of doped semiconductor from said first doping concentration and said second doping concentration, said region having said third doping concentration being located substantially adjacent to and coplanar with said proofmass.

7. A solid state accelerometer as defined in claim 5 wherein said proofmass is electrically separated from said substrate by an oxide layer and by a change in semiconductor type.

8. A solid state accelerometer as defined in claim 5 wherein said accelerometer further comprises an electrical connection to said proofmass.