Uncooled amorphous YBaCuO thin film infrared detector
First Claim
1. A pyroelectric detector, comprising:
- an integral transducer structure for absorbing infrared radiation, including;
an electrically conducting supporting layer having a supporting layer lower surface and a supporting layer upper surface;
a semiconducting transducing layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) at least one member selected from the group consisting of yttrium, lanthanum, and rare earths, (3) copper, and (4) oxygen, having a transducing layer lower surface, a transducing layer upper surface, a resistance of greater than 0.1 Ω
-cm at twenty degrees centigrade, a change in dielectric constant with change in temperature of at least 0.2 per degree centigrade at twenty degrees centigrade, and the transducing layer lower surface opposing said supporting layer upper surface; and
a first electrode layer having a first electrode layer lower surface, a first electrode layer upper surface, and the first electrode layer lower surface opposing a first region of the supporting layer upper surface across the transducing layer; and
means, electrically coupled via said first electrode layer, for measuring pyroelectric current generated by changes in temperature of said transducing layer.
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Abstract
A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.
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Citations
20 Claims
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1. A pyroelectric detector, comprising:
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an integral transducer structure for absorbing infrared radiation, including; an electrically conducting supporting layer having a supporting layer lower surface and a supporting layer upper surface; a semiconducting transducing layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) at least one member selected from the group consisting of yttrium, lanthanum, and rare earths, (3) copper, and (4) oxygen, having a transducing layer lower surface, a transducing layer upper surface, a resistance of greater than 0.1 Ω
-cm at twenty degrees centigrade, a change in dielectric constant with change in temperature of at least 0.2 per degree centigrade at twenty degrees centigrade, and the transducing layer lower surface opposing said supporting layer upper surface; anda first electrode layer having a first electrode layer lower surface, a first electrode layer upper surface, and the first electrode layer lower surface opposing a first region of the supporting layer upper surface across the transducing layer; and means, electrically coupled via said first electrode layer, for measuring pyroelectric current generated by changes in temperature of said transducing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16)
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13. A pyroelectric detector comprising:
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an integral transducer structure for absorbing infrared radiation, including; a semiconducting transducing layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) at least one member selected from the group consisting of yttrium, lanthanum, and rare earths, (3) copper, and (4) oxygen, said semiconducting transducing layer having a resistivity of greater than 0.1 Ω
-cm at twenty degrees centigrade, a change in dielectric constant with change in temperature of at least 0.2 per degree centigrade at twenty degrees centigrade; andmeans for measuring a pyroelectric current generated by changes in temperature of said transducing layer.
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17. A pyroelectric detector comprising:
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a semiconducting transducer layer of amorphous oxide formed from (1) at least one member selected from the group consisting of barium, strontium, and calcium, (2) at least one member selected from the group consisting of yttrium, lanthanum, and rare earths, (3) copper, and (4) oxygen, said semiconducting transducing layer having a change in dielectric constant with change in temperature of at least 0.2 per degrees centigrade at twenty degrees centigrade; and means for measuring a pyroelectric current generated by changes in temperature of said transducing layer. - View Dependent Claims (18, 19, 20)
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Specification