System for real-time control of semiconductor wafer polishing

• US 5,851,135 A
• Filed: 08/07/1997
• Issued: 12/22/1998
• Est. Priority Date: 08/25/1993
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Doan, Trung Tri
• Primary Examiner(s): Eley, Timothy V.
• Application Number:
  US08/907,389
• Time in Patent Office: 502 Days
• Field of Search: 451/5, 451/6, 451/7, 451/8, 451/9, 451/10, 451/41, 451/285, 451/286, 451/287, 451/288, 451/289, 451/290, 437/7, 437/8, 437/225, 437/249
• US Class Current: 451/5
• CPC Class Codes: B23Q 15/013 Control or regulation of feed movement B23Q15/12 takes precedence
• CPC Class Codes: B23Q 15/12 Adaptive control, i.e. adjusting itself to have a performance which is optimum according to a preassigned criterion
• CPC Class Codes: B24B 13/015 of television picture tube viewing panels, headlight reflectors or the like
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/015 Temperature control
• CPC Class Codes: B24B 37/107 in a rotary movement only, about an axis being stationary during lapping
• CPC Class Codes: B24B 37/12 Lapping plates for working plane surfaces
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 49/003 involving acoustic means
• CPC Class Codes: B24B 49/02 according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent B24B49/12 takes precedence
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/10 involving electrical means B24B49/02, B24B49/08 take precedence
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• CPC Class Codes: G05B 19/404 characterised by control arrangements for compensation, e.g. for backlash, overshoot, tool offset, tool wear, temperature, machine construction errors, load, inertia G05B19/19, G05B19/41 take precedence
• CPC Class Codes: G05B 2219/34403 RTI real time, kernel, processing
• CPC Class Codes: G05B 2219/37398 Thickness
• CPC Class Codes: G05B 2219/37602 Material removal rate
• CPC Class Codes: G05B 2219/45026 Circuit board, pcb
• CPC Class Codes: G05B 2219/45199 Polish
• CPC Class Codes: G05B 2219/45232 : CMP chemical mechanical polishing of wafer
• CPC Class Codes: G05B 2219/49052 : Accessory, coolant
• CPC Class Codes: G05B 2219/49057 : Controlling temperature of workpiece, tool, probe holder

Abstract

A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Claims

1. A system for polishing a semiconductor wafer, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, a polishing head shaft, and a polishing head supported by the polishing head shaft for rotation relative to the polishing head shaft, the polishing head being configured to support a semiconductor wafer, and to hold a face of the semiconductor wafer in contact with the platen subassembly, the wafer polishing assembly further including a polishing head displacement mechanism supporting the polishing head shaft relative to the platen subassembly and configured to translate the polishing head shaft relative to the platen subassembly along a polishing path which is variable between a linear polishing path and a non-linear polishing path, to cause the polishing head to polish the wafer face; and

a controller configured to adjust the polishing path during polishing of the wafer.

2. A system in accordance with claim 1 wherein the wafer polishing assembly has a plurality of controllable operational parameters, including polishing path and at least one more controllable operational parameter, that affect the polishing rate and polishing uniformity, wherein the controller is operably coupled to the wafer polishing assembly for monitoring and managing in situ the operational parameters of the wafer polishing assembly.

3. A system in accordance with claim 1 wherein the wafer polishing assembly has a plurality of controllable operational parameters including polishing path and at least one more controllable operational parameter, that affect the polishing rate and polishing uniformity, wherein the controller is operably coupled to the wafer polishing assembly for monitoring and managing in situ the operational parameters of the wafer polishing assembly, wherein the system further comprises a processor operably coupled to the controller for determining desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, and wherein the controller adjusts in situ the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity during polishing of the wafer.

4. A system in accordance with claim 1 wherein the platen subassembly is rotatable about an axis and configured to rotate at a variable platen velocity, and wherein the controller is configured to adjust the velocity of the platen during polishing of the wafer.

5. A system in accordance with claim 1 wherein the polishing head is rotatable about an axis and configured to rotate at a variable wafer velocity, and wherein the controller is configured to adjust the velocity of the polishing head during polishing of the wafer.

6. A system in accordance with claim 1 wherein the polishing head is movable across the platen subassembly at an adjustable wafer movement rate, and wherein the controller is configured to adjust the rate of movement of the polishing head during polishing of the wafer.

7. A system in accordance with claim 1 and further comprising a processor coupled to the controller, a motor drivingly connected to the platen to cause rotation of the platen about an axis, and an endpoint detector including a current meter electrically connected to the motor and in communication with the processor, the current meter indicating to the processor amperage through the motor, the processor providing a signal indicating completion of processing of the wafer in response to a change in amperage through the motor.

8. A system in accordance with claim 1 and further comprising an endpoint detector including an acoustic wave transducer configured to be directed at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

9. A system in accordance with claim 1 and further comprising an endpoint detector including an infrared camera configured to be directed at the wafer.

10. A system in accordance with claim 1 and further comprising end point detection means for determining if polishing of the wafer is complete.

11. A system in accordance with claim 10 wherein the end point detection means comprises means for sensing a change in friction between the wafer and the polishing platen.

12. A system in accordance with claim 10 wherein the end point detection means comprises means for directing acoustic waves at the wafer during polishing, and means for receiving reflected acoustic waves from the wafer.

13. A system in accordance with claim 10 wherein the end point detection means comprises means for detecting temperatures of different areas of the wafer.

14. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a motor drivingly connected to the platen and operative to cause rotation of the platen about the first axis;

a controller operably coupled to the wafer polishing assembly for monitoring and managing in situ at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller adjusting in situ at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including a current meter electrically connected to the motor and in communication with the processor, the current meter indicating to the processor a change in friction between the wafer and the polishing head by detecting a change in amperage through the motor.

15. A system for polishing a semiconductor wafer, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support a semiconductor wafer relative to the platen subassembly under an adjustable polishing force to polish the wafer face;

a motor drivingly connected to the platen subassembly and operative to cause rotation of the platen subassembly about an axis;

a controller configured to adjust the polishing force during polishing of the wafer; and

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a current meter electrically connected to the motor, the current meter indicating a change in friction between the wafer and the polishing head by detecting a change in amperage through the motor.

16. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a controller operably coupled to the wafer polishing assembly for monitoring and managing in situ at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller adjusting in situ at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an acoustic wave transducer configured to direct acoustic waves at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

17. A system for polishing a semiconductor wafer, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support a semiconductor wafer relative to the platen subassembly under an adjustable polishing force to polish the wafer face;

a controller configured to adjust the polishing force during polishing of the wafer;

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an acoustic wave transducer configured to direct acoustic waves at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

18. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a controller operably coupled to the wafer polishing assembly for monitoring and managing in situ at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller adjusting in situ at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including an infrared camera directed at the wafer.

19. A system for polishing a semiconductor wafer, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support a semiconductor wafer relative to the platen subassembly under an adjustable polishing force to polish the wafer face;

a controller configured to adjust the polishing force during polishing of the wafer;

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an infrared camera configured to be directed at the wafer.