Semiconductor laser element, method of manufacturing semiconductor laser element, and laser diode module

• US 5,852,624 A
• Filed: 04/15/1996
• Issued: 12/22/1998
• Est. Priority Date: 05/15/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Furukawa, Chisato, Matsuyama, Takayuki
• Primary Examiner(s): Palmer, Phan T. H.
• Assistant Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US08/632,116
• Time in Patent Office: 981 Days
• Field of Search: 372/36, 372/44, 372/50, 372/109, 372/46, 438/33, 438/28
• US Class Current: 372/44.01
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
• CPC Class Codes: H01S 5/0202 Cleaving

Abstract

In the semiconductor laser element of the present invention, a striped active layer for injecting an electrical current, is formed on the main surface of the semiconductor substrate. A pair of notches for dividing the semiconductor substrate, are made in the main surface of the semiconductor substrate so as to be in parallel with each other interposing the striped active layer. Each of the pair of notches has the ratio between the depth d thereof and a double of the width w, that is 2w, (d/2w), of 1.0 or higher.

Claims

1. A semiconductor laser element comprising:

a semiconductor substrate;

a striped active layer on a surface region of a main surface of the semiconductor substrate; and

a plurality of element separation grooves in the striped active layer on the surface region of the main surface of the semiconductor substrate so as to be adjacent to each other at an interval, for separating the semiconductor substrate into individual elements, the element separation grooves having a ratio of (d/2w) of a depth d from the main surface of the semiconductor substrate with respect to twice width w of higher than 1.0, each element separation groove forming a pair of notches when divided.

2. A semiconductor laser element according to claim 1, wherein an angle made between a bottom surface and a side surface of said notch, is 90°

or larger.

3. A semiconductor laser element according to claim 1, wherein a crystal plane which constitutes the main surface of said semiconductor substrate is a (100) plane, a crystal plane which constitutes side surfaces of said semiconductor substrate are a (011) plane and a (011) plane, and a crystal plane which constitutes the bottom surface of said notch is a (111) plane.

4. A semiconductor laser element according to claim 1, wherein said semiconductor substrate is made of an InP semiconductor and said striped active layer is made of either one of InGaAs and InGaAsP conductors.

5. A semiconductor laser element comprising:

a semiconductor substrate;

a striped active layer, formed on a surface region of a main surface of the semiconductor substrate; and

a pair of U-shaped notches made in the main surface of the semiconductor substrate so as to be in parallel to each other, on both sides of the striped active layer, each of the pair of notches having a ratio (d/2w) of a depth d with respect to a double of width 2w of 1.0 or higher, and a pair of buried layer separation grooves made in the main surface of the semiconductor substrate, on both sides of the stripe active layer, at a predetermined interval, each of the pair of the buried layer separation grooves, having such a relationship that a ratio (DBH/WBH) of a depth DBH from the main surface of the semiconductor substrate with respect to a width WBH, is lower than a ratio (d/2w) of a depth d of the notch from the main surface of the semiconductor substrate with respect to a double of the width 2w, (DBH/WBH<

d/2W).

6. A semiconductor laser element according to claim 5, wherein the ratio of the depth d of said notch taken from the main surface of said semiconductor substrate with respect to the double width 2w, (d/2w), is higher than the ratio of the depth DBH of said buried layer separation groove taken from the main surface of said semiconductor substrate with respect to the width WBH thereof, (DBH/WBH), but equal to or less than five times as high as this ratio (DBH/WBH<

d/2W≦

5 (DBH/WBH)).

7. A semiconductor laser element according to claim 5, wherein an angle made between a bottom surface and a side surface of said notch, is 90°

or larger.

8. A semiconductor laser element according to claim 5, wherein a crystal plane which constitutes the main surface of said semiconductor substrate is a (100) plane, a crystal plane which constitutes side surfaces of said semiconductor substrate are a (011) plane and a (011) plane, and a crystal plane which constitutes the bottom surface of said notch is a (111) plane.

9. A semiconductor laser element according to claim 5, wherein said semiconductor substrate is made of an InP semiconductor and said striped active layer is made of either one of InGaAs and InGaAsP conductors.

10. A semiconductor laser element according to claim 5, wherein the depth of said buried layer separation groove is equal to the depth of said notch.

11. A semiconductor laser element array comprising:

a semiconductor substrate;

a plurality of striped active layers, formed on a surface region of a main surface of the semiconductor substrate, for injecting a plurality of currents; and

a plurality of pairs of buried layer separation grooves made in the main surface of the semiconductor substrate and on both sides of each of the stripe active layers, at a predetermined interval;

a pair of U-shaped notches for dividing the semiconductor substrate so as to be in parallel to each other, interposing all of the plurality of pairs of the buried layer separation grooves, each of the pair of notches having a ratio (d/2w), of a depth d taken from the main surface of the semiconductor substrate with respect to a double of the width 2w of 1.0 or higher, and each of the pairs of the buried layer separation grooves having such a relationship that a ratio (DBH/WBH) of a depth DBH from the main surface of the semiconductor substrate with respect to a width WBH, is lower than a ratio (d/2w) of a depth d of the notch from the main surface of the semiconductor substrate with respect to a double of the width 2w, (DBH/WBH<

d/2W).

12. A method of manufacturing a semiconductor laser element comprising the steps of:

forming a plurality of striped active layers made of semiconductors containing one of InGaAs and InGaAsP, for injecting an electrical current to a surface region of a main surface of a semiconductor substrate made of InP substrate;

forming a pair of U-shaped notches which are located on both sides of the active layer, by selectively wet-etching the main surface of the semiconductor substrate with a sulfuric acid-based etchant, each of the pair of the notches having a ratio (d/2w) of a depth d from the main surface of the semiconductor substrate with respect to a double of the width 2w of 1.0 or higher, and forming a pair of buried layer separation grooves made in the main surface of the semiconductor substrate, on both sides of the stripe active layer, at a predetermined interval, each of the pair of the buried layer separation grooves, having such a relationship that a ratio (DBH/WBH) of a depth DBH from the main surface of the semiconductor substrate with respect to a width WBH, is lower than a ratio (d/2w) of a depth d of the notch from the main surface of the semiconductor substrate with respect to a double of the width 2w, (DBH/WBH<

d/2W); and

slicing the semiconductor substrate from a rear surface which opposes to the main surface thereof, to form a resonance surface, and further slicing the semiconductor substrate from the main surface, using the notches as guides, thus making a plurality of semiconductor laser elements, each having a resonance surface, a striped active layer, and a pair of buried layer separation grooves formed on both sides of the striped active layer, from the semiconductor substrate.

13. A laser diode module comprising:

a semiconductor laser element having;

a semiconductor substrate;

a striped activation layer for injecting a current, on a surface region of a main surface of the semiconductor substrate; and

a pair of U-shaped notches in the main surface of the semiconductor substrate so as to be in parallel with each other on both sides of the active layer, for separating the semiconductor substrate into individual elements, each of said pair of notches having a ratio (d/2w) of a depth d from the main surface of the semiconductor substrate with respect to twice width w of higher than 1.0;

supporting means for supporting the semiconductor laser element;

lead means to which a drive signal is input so as to cause an emission of the semiconductor laser element, a laser beam being generated as the emission of the semiconductor laser element; and

optical fiber means for receiving the laser beam focused by a lens and outputting it as an optical signal.