Method of planarizing an insulating layer in a semiconductor device
First Claim
1. A method of planarizing an insulating layer of a semiconductor device using a chemical mechanical polish apparatus which comprises a rotatable platen, a polishing pad secured to said platen and a rotating carrier having recesses for holding a wafer, said rotating carrier operated to position said wafer on said polishing pad, the method comprising steps of:
- a first polishing step for rotating said platen and said rotating carrier holding said wafer contacted with said polishing pad secured to said platen, applying a nitrogen (N2) gas to the rear surface of the wafer to contact a surface of said wafer with the polishing pad, and applying force to said wafer through said rotating carrier to press said wafer against said polishing pad;
a second polishing step for increasing a speed of revolution of said platen and said rotating carrier and decreasing the force applied to said wafer.
3 Assignments
0 Petitions
Accused Products
Abstract
The present invention discloses a method of planarizing an insulating layer of a semiconductor device. The method of the present invention comprises a first polishing step for rotating the platen and the rotating carrier holding the wafer contacted with the polishing pad secured to the platen, applying a nitrogen (N2) gas to the rear surface of the wafer to contact a surface of the wafer with the polishing pad, and applying force to the wafer through the rotating carrier to press the wafer against the polishing pad. Then, a second polishing step for increasing a speed of revolution of the platen and the rotating carrier and decreasing the force applied to the wafer is performed.
17 Citations
7 Claims
-
1. A method of planarizing an insulating layer of a semiconductor device using a chemical mechanical polish apparatus which comprises a rotatable platen, a polishing pad secured to said platen and a rotating carrier having recesses for holding a wafer, said rotating carrier operated to position said wafer on said polishing pad, the method comprising steps of:
-
a first polishing step for rotating said platen and said rotating carrier holding said wafer contacted with said polishing pad secured to said platen, applying a nitrogen (N2) gas to the rear surface of the wafer to contact a surface of said wafer with the polishing pad, and applying force to said wafer through said rotating carrier to press said wafer against said polishing pad; a second polishing step for increasing a speed of revolution of said platen and said rotating carrier and decreasing the force applied to said wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification