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Method of manufacturing a varicap diode, a varicap diode, a receiver device, and a TV receiver set

  • US 5,854,117 A
  • Filed: 09/17/1996
  • Issued: 12/29/1998
  • Est. Priority Date: 09/18/1995
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a varicap diode comprising providing a silicon substrate with an epitaxial layer of a first conductivity type with a first zone by providing dopant atoms of a first conductivity type in the epitaxial layer and with a second zone adjoining a surface of the epitaxial layer by providing dopant atoms of a second conductivity type opposed to the first in the epitaxial layer, forming a pn junction between the second zone and the first zone, characterized in that the second zone is provided by providing a layer of polycrystalline silicon having dopant atoms of the second conductivity type on the surface, and diffusing the dopant atoms from this layer into the epitaxial layer to form a pn junction at a distance of less than 0.3 μ

  • m from the polycrystalline silicon.

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