Apparatus for growing thin films

• US 5,855,680 A
• Filed: 09/25/1996
• Issued: 01/05/1999
• Est. Priority Date: 11/28/1994
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: Neste Oy (Neste Corporation)
• Inventors: Patteri, Janne, Soininen, Pekka
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US08/682,704
• Time in Patent Office: 832 Days
• Field of Search: 118/715, 118/719, 118/725, 118/726
• US Class Current: 118/719
• CPC Class Codes: C23C 16/448 characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

An apparatus for growing thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film. The apparatus includes a reaction chamber pack into which the substrate is placed. The apparatus further includes at least two reactant sources, from which the reactants can be fed in the form of gas-phase pulses into the reaction chamber pack. The apparatus further includes reactant inflow channels for connecting the reactant sources to the reaction chamber pack. The reaction chamber pack, the reactant sources and the reactant inflow channels are all placed inside the same pressure shell. The reaction chamber pack and the reactant sources are each provided with individual heaters, which heat the reaction chamber pack and each reactant source, so that each heater is independently controllable from each other. Further, active thermal insulation elements thermally isolate the heaters from each other. These active thermal insulation elements are capable of controlling the internal temperature of the pressure shell independently from the temperatures of the reactant sources and the reaction chamber pack. The apparatus allows the temperatures of the reactant sources and the reaction chamber pack to be rapidly elevated and lowered, respectively, with low heat loss.

Claims

1. An apparatus for growing compound thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film, said apparatus comprising:

a reaction chamber pack into which the substrate can be placed;

a plurality of reactant sources from which the vapor-phase reactants used in a thin-film growth process can be fed in the form of gas-phase pulses into said reaction chamber pack; and

a plurality of reactant inflow channels suited for connecting said reactant sources to said reaction chamber pack, wherein said reaction chamber pack, said reactant sources and said reactant inflow channels are all placed inside a pressure shell, and wherein said reaction chamber pack and said reactant sources are each provided with individual heating means for heating said reaction chamber pack and each of said reactant sources in a fashion independently controllable from each other, and wherein said heating means has a plurality of heatable components which are isolated from each other using active thermal insulation elements.

2. The apparatus according to claim 1, wherein the internal temperature of the pressure shell can be controlled independently from the temperatures of said reactant sources and said reaction chamber pack with the help of said active thermal insulation elements.

3. The apparatus according to claim 2, wherein said active thermal insulation element of said reaction chamber pack comprises at least a thermal radiation reflecting envelope adapted about a heater element of said reaction chamber pack.

4. The apparatus according to claim 3, wherein the heater element of said reaction chamber pack comprises a tubular resistive heater element.

5. The apparatus according to claim 1, where the walls of said pressure shell are made from at least one of the following metals:

stainless steel, titanium and aluminum.

6. The apparatus according to claim 1, where the walls of said pressure shell are made from a metal alloy.

7. The apparatus according to claim 1, wherein said reactant sources are divided into a first group and a second group, said first group comprising metallic reactants and said second group comprising nonmetallic reactants, whereby the sources of said first group use a first inflow channel and the sources of said second group use a second inflow channel.

8. The apparatus according to claim 7, wherein the sources of said first and second groups are each arranged superimposed in parallel, whereby each of the sources are connected at one end to said first and second inflow channels, respectively, wherein the other end of said first and second inflow channels is connected to said reaction chamber pack.

9. The apparatus according to claim 1, wherein a heating means is placed outside said reactant inflow channels.

10. An apparatus for growing compound thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film, said apparatus comprising:

a reaction chamber pack into which the substrate can be placed;

a plurality of reactant sources from which the vapor-phase reactants used in a thin-film growth process can be fed in the form of gas-phase pulses into said reaction chamber pack; and

a plurality of reactant inflow channels suited for connecting said reactant sources to said reaction chamber pack, wherein said reaction chamber pack, said reactant sources and said reactant inflow channels are all placed inside a pressure shell, and wherein said reaction chamber pack and said reactant sources are each provided with individual heating means, which are suited for heating said reaction chamber pack and each of said reactant sources in a fashion independently controllable from each other, wherein said heating means has a plurality of heatable components which are isolated from each other using active thermal insulation elements, and wherein said heating means comprises an envelope surrounding said reaction chamber pack, said envelope having a first heat-equalizing envelope placed to a side facing said reaction chamber pack, and a second heat-equalizing envelope placed to a side facing the pressure shell, wherein between the first and second heat-equalizing envelopes is adapted a heater element suited for heating the surfaces of the first and second heat-equalizing envelopes.

11. An apparatus for growing compound thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film, said apparatus comprising:

a reaction chamber pack into which the substrate can be placed;

a plurality of reactant sources from which the vapor-phase reactants used in a thin-film growth process can be fed in the form of gas-phase pulses into said reaction chamber pack; and

a plurality of reactant inflow channels suited for connecting said reactant sources to said reaction chamber pack, wherein said reaction chamber pack, said reactant sources and said reactant inflow channels are all placed inside a pressure shell, and wherein said reaction chamber pack and said reactant sources are each provided with individual heating means, which are suited for heating said reaction chamber pack and each of said reactant sources in a fashion independently controllable from each other, and wherein said heating means has a plurality of heatable components which are isolated from each other using active thermal insulation elements, wherein said heating means of said reactant sources are formed by an envelope enclosing each of said reactant sources, said envelope having a first heat-equalizing envelope placed to a side facing said reactant sources, and a second heat-equalizing envelope placed to a side facing the pressure shell, wherein between the first and second heat-equalizing envelopes is a adapted a heater element suited for heating the surfaces of the first and second heat-equalizing envelopes.

12. The apparatus according to claim 11, wherein said active thermal insulation element of said reactant sources comprises at least one thermal radiation reflecting envelope adapted about the heater element of each of said reactant sources.

13. The apparatus according to claim 12, wherein the heater element of said reactant sources comprises a tubular heater element.

14. An apparatus for growing compound thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film, said apparatus comprising:

a reaction chamber pack into which the substrate can be placed;

a plurality of reactant sources from which the vapor-phase reactants used in a thin-film growth process can be fed in the form of gas-phase pulses into said reaction chamber pack; and

a plurality of reactant inflow channels suited for connecting said reactant sources to said reaction chamber pack, wherein said reaction chamber pack, said reactant sources and said reactant inflow channels are all placed inside a pressure shell, and wherein said reaction chamber pack and said reactant sources are each provided with individual heating means, which are suited for heating said reaction chamber pack and each of said reactant sources in a fashion independently controllable from each other, and wherein said heating means has a plurality of heatable components which are isolated from each other using active thermal insulation elements, and wherein the pressure shell is equipped with a door having a wall facing the interior of the pressure shell provided with a means for heating said door.

15. The apparatus according to claim 14, wherein said reactant inflow channels are disposed within the pressure shell on the side facing said door, said channels being heatable with the help of the heating means of said door.

16. An apparatus for growing compound thin films onto a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants for the purpose of forming a solid-state thin film, said apparatus comprising:

a reaction chamber pack into which the substrate can be placed;

a plurality of reactant sources from which the vapor-phase reactants used in a thin-film growth process can be fed in the form of gas-phase pulses into said reaction chamber pack; and

a plurality of reactant inflow channels suited for connecting said reactant sources to said reaction chamber pack, wherein said reaction chamber pack, said reactant sources and said reactant inflow channels are all placed inside a pressure shell, and wherein said reaction chamber pack and said reactant sources are each provided with individual heating means, which are suited for heating said reaction chamber pack and each of said reactant sources in a fashion independently controllable from each other, wherein said heating means has a plurality of heatable components which are isolated from each other using active thermal insulation elements, and wherein an exhaust pipe of nonreacted reaction components is connected to said reaction chamber pack, wherein said pipe is disposed in a cool part of the pressure shell so that condensation of the nonreacted reaction components occurs therein.