Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method

• US 5,855,685 A
• Filed: 10/03/1996
• Issued: 01/05/1999
• Est. Priority Date: 10/09/1995
• Status: Expired due to Fees

• Current Assignee: Anelva Corporation (Canon Inc.)
• Original Assignee: Anelva Corporation (Canon Inc.)
• Inventors: Sasaki, Masao, Sekiguchi, Atsushi, Tobe, Ryoki
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/720,866
• Time in Patent Office: 824 Days
• Field of Search: 156/345, 118/723 E, 118/723 I, 118/723 IR
• US Class Current: 118/723.00I
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.

Claims

1. A plasma enhanced CVD apparatus, comprising:

a processing chamber;

an evacuation mechanism for evacuating said processing chamber;

a gas introduction mechanism for introducing a source gas into the processing chamber;

a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode;

cylindrical introduction portions passing through a wall of said processing chamber; and

electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber;

wherein each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed in the processing chamber and arranged surrounding said through-hole.

2. A plasma enhanced CVD apparatus as set forth in claim 1, wherein an opening of said groove is located on a plane perpendicular to an axis of said through-hole and a depth direction of said annular groove is parallel to the axis of said through-hole.

3. A plasma enhanced CVD apparatus as set forth in claim 1, wherein an opening of said annular groove is located on a cylindrical face concentric with said through-hole and a depth direction of said annular groove is perpendicular to an axis of said through hole.

4. A plasma enhanced CVD apparatus as set forth in claim 2, wherein each of said insulation members includes a plurality of annular grooves.

5. A plasma enhanced CVD apparatus as set forth in claim 1, wherein each of said insulation members includes a plurality of annular grooves, and some openings of said annular grooves are located on a plane perpendicular to an axis of said through-hole and a remainder of the openings of said annular grooves are located on a cylindrical face concentric with said through-hole.

6. A plasma enhanced CVD apparatus as set forth in claim 1, wherein a surface of each of said electrical insulation members that is exposed in said processing chamber is rough.

7. A plasma enhanced CVD apparatus as set forth in claim 1, wherein a width of said groove is in a range of 0.01 mm to 3 mm.

8. A plasma enhanced CVD apparatus as set forth in claim 1, wherein a width of said groove is in a range of 0.3 mm to 2 mm.

9. A plasma enhanced CVD apparatus as set forth in claim 1, wherein a ratio of depth to width of said annular groove is in a range of 2 to 1,000.

10. A plasma enhanced CVD apparatus as set forth in claim 1, wherein a ratio of depth to width of said annular groove is in a range of 5 to 100.

11. A plasma enhanced CVD apparatus as set forth in claim 1, wherein said plasma generating electrode is a coil comprising substantially one-turn.

12. A plasma enhanced CVD apparatus as set forth in claim 1, wherein said plasma generating electrode is a coil comprising more than one turn.

13. A plasma enhanced CVD apparatus as set forth in claim 1, wherein the introduction portions form part of said plasma generating electrode, one of said introduction portions is connected to a radio-frequency power supply and another of the introduction portions is grounded via a ground connecting mechanism.

14. A plasma enhanced CVD apparatus as set forth in claim 13, wherein said ground connecting mechanism comprises at least one of a capacitor connecting said plasma generating electrode to ground, a metal plate connecting said plasma generating electrode to ground, and a coil connecting said plasma generating electrode to ground.

15. A plasma enhanced CVD apparatus as set forth in claim 13, wherein said ground connecting mechanism comprises at least two of a capacitor capable of connecting said plasma generating electrode to ground, a metal plate capable of connecting said plasma generating electrode to ground, and a coil capable of connecting said plasma generating electrode to ground, which are selectively switched.

16. A plasma processing CVD apparatus, comprising:

a processing chamber;

an evacuation mechanism for vacuuming said processing chamber;

a gas introduction mechanism for introducing a source gas into the processing chamber;

a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode;

cylindrical introduction portions passing through a wall of said processing chamber; and

electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber;

wherein each of said electrical insulation members comprises a round through-hole through which said corresponding introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed to the processing chamber and arranged surrounding said through-hole.

17. An insulator for a CVD apparatus, comprising:

a body formed of an insulating material, said body including a face for securing the insulator to a wall of a processing chamber of said CVD apparatus;

a through-hole extending through a center of said body so that the through-hole extends through the wall of the processing chamber when the body is secured to the wall; and

a pair of parallel plates arranged concentrically around said through-hole so as to create a groove between said parallel plates, said groove being exposed to an interior portion of the processing chamber when the body is secured to the wall.

18. The insulator of claim 17, wherein the through-hole extends substantially perpendicular to the wall of the processing chamber when the body is secured to the wall.

19. The insulator of claim 17, wherein the parallel plates extend in a direction parallel to the through-hole.

20. The insulator of claim 17, wherein the parallel plates extend in a direction perpendicular to the through-hole.

21. The insulator of claim 17, wherein the parallel plates extend in a direction parallel to the through-hole, and further comprising a second pair of parallel plates that extend perpendicular to the through-hole.

22. The insulator of claim 17, further comprising a third plate parallel to the pair of plates.

23. A plasma enhanced CVD method, comprising steps of:

introducing a source gas into a processing chamber;

generating plasma by supplying electric power to a plasma generating electrode provided in said processing chamber; and

depositing a conductive film onto a substrate in said processing chamber;

wherein said plasma generating electrode comprises cylindrical introduction portions passing through a wall of said processing chamber;

electrical insulation members are arranged between a respective one of said introduction portions and said processing chamber; and

each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface exposed in said processing chamber and arranged surrounding said through hole.

24. A plasma enhanced CVD method as set forth in claim 23, wherein a titanium nitride film is deposited onto the substrate by using titanium tetrachloride, gaseous nitrogen and gaseous hydrogen as said source gases.

25. A plasma enhanced CVD method as set forth in claim 23, wherein a titanium film is deposited onto the substrate by using titanium tetrachloride and gaseous hydrogen as said source gases.

26. A plasma enhanced CVD method as set forth in claim 23, wherein a titanium silicide film is deposited onto the substrate by using titanium tetrachloride and gaseous hydrogen as said source gases and by using silicon as said substrate.

27. A plasma enhanced CVD method as set forth in claim 24, wherein titanium is used as a material for said plasma generating electrode.