IC-processed microneedles

• US 5,855,801 A
• Filed: 01/07/1997
• Issued: 01/05/1999
• Est. Priority Date: 06/06/1994
• Status: Expired due to Fees

• Current Assignee: Albert P. Pisano, Liwei Lin
• Original Assignee: Albert P. Pisano, Liwei Lin
• Inventors: Pisano, Albert P., Lin, Liwei
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/779,504
• Time in Patent Office: 728 Days
• Field of Search: 156/644.1, 156/657.1, 156/662.1, 216/2, 216/56, 216/87, 216/41, 438/689, 438/745, 438/756, 438/757
• US Class Current: 216/2
• CPC Class Codes: A61B 17/205 Vaccinating by means of needles or other puncturing devices
• CPC Class Codes: A61M 37/00 Other apparatus for introducing media into the body for reproduction or fertilisation A61B17/425; apparatus for iontophoresis or cataphoresis A61N1/30; Percutany, i.e. introducing medicines into the body by diffusion through the skin salt baths A61H33/04
• CPC Class Codes: A61M 37/0015 by using microneedles
• CPC Class Codes: G01N 2035/00237 Handling microquantities of analyte, e.g. microvalves, capillary networks
• CPC Class Codes: G01N 33/4833 of solid biological material, e.g. tissue samples, cell cultures tissue in vivo A61B5/00; cell suspensions G01N33/48735

Abstract

A method of fabricating a microstructure is disclosed. The method includes providing a substrate for forming an interface region and an elongated portion extending away from the interface region. A patterned, non-planar etchable structure is formed on one side of the elongated portion of the substrate. An unetchable membrane layer is deposited atop the etchable structure. At least one etching hole is formed in the membrane layer. The etchable structure is etched by placing an etchant into the etching hole to form a cavity underneath the membrane layer, thereby producing a shaft.

Claims

1. A method of fabricating a microstructure, comprising the steps of:

providing a substrate for forming an interface region and an elongated portion extending away from said interface region, said substrate including a frontside and a backside;

forming a patterned, non-planar etchable structure on the frontside of said elongated portion;

depositing an unetchable membrane layer atop said etchable structure;

opening at least one etching hole in said membrane layer; and

etching said etchable structure by placing an etchant into said etching hole, said etchable structure being etched to form a cavity underneath said membrane layer, thereby producing a shaft formed from said membrane layer and said elongated portion of said substrate.

2. The method of claim 1 further including the step of:

depositing additional membrane material to close said etching hole.

3. The method of claim 1 wherein said opening step includes opening a plurality of etching holes including a first etching hole at a first end of said membrane layer and a second etching hole at a second end of said membrane layer.

4. The method of claim 3 further including:

depositing additional membrane material to close said plurality of etching holes except said first and second etching holes, which form ports for permitting flow of a liquid therethrough.

5. The method of claim 1 further including the step of:

prior to said step of forming said patterned non-planar etchable structure, forming at least one polysilicon resistor, such that said patterned non-planar etchable structure is then deposited atop said resistor.

6. The method of claim 1 further including the steps of:

patterning the backside of said substrate; and

etching the backside in order to separate said shaft and said interface region from said substrate.

7. The method of claim 6 wherein said backside etching step further includes the steps of:

etching the backside such that said interface region and said elongated portion remain attached to said substrate;

etching portions of thin films on the frontside of said substrate to form an opening through to said substrate; and

etching said substrate such that said opening extends through said substrate on said elongated portion, said elongated portion being detached from said substrate.

8. A method of fabricating a microneedle, comprising the steps of:

providing a semiconductor substrate for forming an interface region and an elongated portion;

forming a shaft enclosing a microchannel along said elongated portion, said shaft extending from said interface region; and

forming first and second ports through said shaft for permitting transport of a liquid through said microchannel.

9. The method of claim 8 further including the step of:

providing a first resistor on said substrate within said shaft for heating a liquid which flows therethrough.

10. The method of claim 9 further including the step of:

fabricating a CMOS device on said interface region.

11. The method of claim 10 wherein said CMOS fabricating step includes depositing a polysilicon layer, said polysilicon layer also forming said first resistor.

12. A method of fabricating a microstructure, comprising the steps of:

providing a substrate for forming a region and an elongated portion extending away from said region, said substrate including a first side and a second side;

forming a patterned etchable structure on said first side;

depositing an unetchable layer atop said etchable structure;

opening at least one etching hole in said unetchable layer; and

etching said etchable structure by placing an etchant into said at least one etching hole, said etchable structure being etched to form a cavity underneath said unetachable layer, thereby producing a shaft formed from said unetchable layer and said elongated portion of said substrate.