Process for production of semiconductor substrate

• US 5,856,229 A
• Filed: 05/27/1997
• Issued: 01/05/1999
• Est. Priority Date: 03/10/1994
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Yonehara, Takao
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US08/863,717
• Time in Patent Office: 588 Days
• Field of Search: 438/406, 438/409, 438/466, 438/459, 438/759, 438/977, 438/222, 438/330, 438/485, 438/107, 438/960
• US Class Current: 438/406
• CPC Class Codes: H01L 21/76245 using full isolation by porous oxide silicon, i.e. FIPOS techniques
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: Y10S 438/96 Porous semiconductor
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Claims

1. A process for producing a semiconductor substrate comprising the steps of:

forming a nonporous monocrystalline semiconductor layer on a first substrate wherein the first substrate comprises a porous layer at the surface thereof;

bonding a second substrate to the nonporous monocrystalline layer;

separating the bonded substrate such that a portion of the porous layer remains on the second substrate and a portion of the porous layer is not removed from the first substrate;

removing the portion of the porous layer on the second substrate; and

removing the portion of the porous layer remaining on the first substrate.

3. The process according to claim 1 or 2, wherein the porous layer is formed of silicon.

4. The process according to claim 1 or 2, wherein after removing the porous layer from the separated first substrate, a new porous layer is formed on the first substrate, and is employed repeatedly as the first substrate in the forming step of the nonporous monocrystalline semiconductor layer and subsequent steps.

5. The process according to claim 1 or 2, wherein the nonporous crystalline semiconductor layer is an Si layer.

6. The process according to claim 1 or 2, wherein the nonporous crystalline semiconductor layer is a compound semiconductor layer.

7. The process according to claim 1 or 2, wherein the first substrate is Si.

8. The process according to claim 1 or 2, wherein the second substrate is light-transmissive.

9. The process according to claim 1 or 2, wherein either of the steps of removing the porous layer is conducted by etching.

10. The process according to claim 1 or 2, wherein either of the steps of removing the porous layer is conducted by selective grinding of the porous layer by employing the nonporous monocrystalline semiconductor layer as a stopper.

11. The process according to claim 1 or 2, wherein the step of separating the bonded substrates at the porous layer is conducted by at least one of methods of application of a compression force to the substrate in a direction perpendicular to the bonding face of the substrate, application of a pulling force to the substrate in a direction perpendicular to the bonding face of the substrate, and application of a shear stress to the bonding face.

14. The process according to claim 1 or 2, wherein the step of bonding is conducted by one or more of the methods of anode coupling, compression, and heat treatment.

15. The process according to claim 1 or 2, wherein the porous layer is formed by anodization.

16. The process according to claim 15, wherein the anodization is conducted in an HF solution.

17. The process according to claim 1 or 2, wherein the step of separating the substrates at the porous layer is conducted by application of a wave energy.

18. The process according to claim 1 or 2, wherein the step of separating the substrates at the porous layer is conducted by inserting a separation member from an edge face of the porous layer thereinto.

19. The process according to claim 1 or 2, wherein the step of separating the substrates at the porous layer is conducted by expansion energy of a material impregnated into the porous layer.

20. The process according to claim 1 or 2, wherein the step of separating the substrates at the porous layer is conducted by selective etching at the edge face of the wafer.

21. The process according to claim 1 or 2, wherein the porosity of the porous layer ranges from 10 to 80%.

22. The process according to claim 15, wherein the current density is increased in stages when said anodization is carried out.

23. The process according to claim 15, wherein the porosity of the porous layer is varied when said anodization is carried out.

24. The process according to claim 23, wherein the variation of the porosity is carried out in stages.

2. A process for producing a semiconductor substrate, comprising the steps of:

forming a nonporous monocrystalline semiconductor layer on a first substrate wherein the first substrate comprises a porous layer at the surface thereof;

bonding a second substrate to the nonporous monocrystalline layer with interposition of an insulative layer;

separating the bonded substrates such that a portion of the porous layer remains on the second substrate and a portion of the porous layer is not removed from the first substrate;

removing the portion of the porous layer on the second substrate; and

removing the portion of the porous layer remaining on the first substrate.

12. The process according to claim 2, wherein the insulative layer is formed on at least one of the nonporous monocrystalline layer and the surface of the second substrate.

13. The process according to claim 12, wherein the insulative layer is selected from thermal oxidation films, deposited SiO₂ films, and deposited Si₃ N₄ films.