Self-biased dual spin valve sensor

• US 5,856,897 A
• Filed: 11/26/1997
• Issued: 01/05/1999
• Est. Priority Date: 11/27/1996
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Mauri, Daniele
• Primary Examiner(s): OMETZ, DAVID LOUIS
• Application Number:
  US08/979,815
• Time in Patent Office: 405 Days
• Field of Search: 360/110, 360/113, 360/122, 360/124, 360/126, 324/252, 324/207.21, 365/8, 365/157, 365/158, 338/32 R, 338/32 H
• US Class Current: 360/314
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/00 Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor G11B11/00 and G11B13/00 take precedence
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3932 Magnetic biasing films
• CPC Class Codes: G11B 5/3954 the active elements transducing on a single track

Abstract

A dual spin valve (DSV) magnetoresistive (MR) sensor has a free magnetic layer disposed between first and second pinned magnetic layers. The first pinned layer has two magnetic sublayers separated from each other by an antiparallel spacer. The first magnetic sublayer closer to the free layer has a magnetic moment which is smaller than the magnetic moment of the second magnetic sublayer. The net moment of the magnetic sublayers is chosen to be equal to the magnetic moment of the second pinned layer thus creating a flux closure and substantially minimizing the effect of the demagnetizing forces. By creating a flux closure and current induced magnetic fields, the first and second pinned layers'"'"' magnetization are fixed. This is in contrast with conventional dual spin valve sensors using two antiferromagnetic layers to pin the magnetization of the pinned layers.

Claims

1. A dual spin valve (DSV) sensor having first and second end regions separated from each other by a central region, said DSV sensor comprising:

a DSV element in said central region, said DSV element including;

a free layer, said free layer having;

first and second ferromagnetic sublayers; and

an antiparallel spacer disposed between said first and second ferromagnetic sublayers;

a first pinned layer having a first magnetic moment;

a second pinned layer having a second magnetic moment;

a first non-magnetic spacer layer disposed between said free layer and said first pinned layer; and

a second non-magnetic spacer layer disposed between said free layer and said second pinned layer, said free layer being disposed between said first spacer layer and said second spacer layer;

first and second longitudinal bias layers formed in said first and second end regions, respectively, for longitudinally biasing said free layer, said first and second longitudinal bias layers forming a contiguous junction with said DSV element; and

first and second DSV leads disposed over said first and second longitudinal bias layers, respectively, for applying sense current to said DSV element for pinning the magnetization of said first and second pinned layers.

2. A DSV sensor as recited in claim 1 wherein said first ferromagnetic sublayer is selected from a group of material consisting of NiFe, NiFeCo, NiFe/Co and NiFeCo/Co.

3. A DSV sensor as recited in claim 1 wherein said second ferromagnetic sublayer is selected from a group of material consisting of NiFe, NiFeCo, NiFe/Co and NiFeCo/Co.

4. A DSV sensor as recited in claim 1 wherein said first and second pinned layers are selected from a group of material consisting of NiFe, NiFe/Co, NiFeCr, NiFeNb, Co, NiFe/Co, NiFeCo/Co, NiFeCr/Co and NiFeNb/Co.

5. A DSV sensor as recited in claim 1 wherein said first spacer layer is selected from a group of material consisting of copper, gold, silver and their alloys.

6. A DSV sensor as recited in claim 1 wherein said second spacer layer is selected from a group of material consisting of copper, gold, silver and their alloys.

7. A DSV sensor as recited in claim 1 wherein said antiparallel spacer is selected from a group of material consisting of Ru, Cr, Rh, Ir and their alloys.

8. A DSV sensor as recited in claim 1 wherein said first an d second longitudinal bias layers are selected from a group of hard magnetic material consisting of CoPtCr, CoPtCrTa, and CoPtCrSiO₂.

9. A DSV sensor as recited in claim 1 wherein said first and second longitudinal bias layers are selected from a group of soft magnetic material consisting of NiFe and NiFeCo, each of said longitudinal bias layers being exchanged with an antiferromagnetic layer, each of said antiferromagnetic layers selected from a group of material consisting of FeMn, NiMn, PtMn, PdMn, IrMn and RhMn.

10. A magnetic storage system, comprising:

a magnetic storage medium for recording data;

a dual spin valve (DSV) sensor having first and second end regions separated from each other by a central region, said DSV sensor comprising;

a DSV element in said central region, said DSV element including;

a free layer, said free layer having;

first and second ferromagnetic sublayers; and

an antiparallel spacer disposed between said first and second ferromagnetic sublayers;

a first pinned layer having a first magnetic moment;

a second pinned layer having a second magnetic moment;

a first non-magnetic spacer layer disposed between said free layer and said first pinned layer; and

a second non-magnetic spacer layer disposed between said free layer and said second pinned layer, said free layer being disposed between said first spacer layer and said second spacer layer;

first and second longitudinal bias layers formed in said first and second end regions, respectively, for longitudinally biasing said free layer, said first and second longitudinal bias layers forming a contiguous junction with said DSV element; and

first and second DSV leads disposed over said first and second longitudinal bias layers, respectively, for applying sense current to said DSV element for pinning the magnetization of said first and second pinned layers; and

a recording channel coupled to said DSV sensor for detecting resistance changes in said DSV element responsive to applied magnetic fields representative of data recorded in said magnetic storage medium.

11. A magnetic storage system according to claim 10, wherein said first and second ferromagnetic sublayers are selected from a group of material consisting of NiFe, NiFeCo, NiFe/Co and NiFeCo/Co.

12. A magnetic storage system according to claim 10, wherein said first and second pinned layers are selected from a group of material consisting of NiFe, NiFe/Co, NiFeCr, NiFeNb, Co, NiFe/Co, NiFeCo/Co, NiFeCr/Co and NiFeNb/Co.

13. A magnetic storage system according to claim 10, wherein said first and second spacer layers are selected from a group of material consisting of copper, gold, silver and their alloys.

14. A magnetic storage system according to claim 10, wherein said antiparallel spacer is selected from a group of material consisting of Ru, Cr, Rh, Ir and their alloys.

15. A magnetic storage system according to claim 10, wherein said first and second longitudinal bias layers are selected from a group of hard magnetic material consisting of CoPtCr, CoPtCrTa, and CoPtCrSiO₂.

16. A magnetic storage system according to claim 10, wherein said first and second longitudinal bias layers are selected from a group of soft magnetic material consisting of NiFe and NiFeCo, each of said longitudinal bias layers being exchanged with an antiferromagnetic layer, each of said antiferromagnetic layers selected from a group of material consisting of FeMn, NiMn, PtMn, PdMn, IrMn and RhMn.