Method of and apparatus for dressing polishing cloth

• US 5,857,898 A
• Filed: 11/19/1997
• Issued: 01/12/1999
• Est. Priority Date: 07/18/1995
• Status: Expired due to Term

• Current Assignee: Ebara Corporation
• Original Assignee: Ebara Corporation
• Inventors: Yahiro, Tomoyuki, Kimura, Norio, Hiyama, Hirokuni
• Primary Examiner(s): Morgan, Eileen P.
• Application Number:
  US08/974,598
• Time in Patent Office: 419 Days
• Field of Search: 451/56, 451/57, 451/58, 451/41, 451/285, 451/287, 451/289, 451/443, 451/444
• US Class Current: 451/56
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

A polishing cloth is dressed between polishing processes each for polishing a workpiece such as a semiconductor wafer. The polishing cloth is dressed while supplying a dressing liquid such as water during a dressing process, and an abrasive liquid for polishing a workpiece is supplied to the polishing cloth for a predetermined period of time prior to a polishing process. The predetermined period of time may be present within the dressing process and immediately precedes the polishing process, and the dressing process may be carried out while supplying the abrasive liquid to the polishing cloth. Alternatively, the predetermined period of time may be present between the dressing process and the polishing process.

Claims

1. A method of dressing a polishing cloth between a preceding polishing process for polishing a workpiece and a subsequent polishing operation for polishing another workpiece, said method comprising the steps of:

dressing said polishing cloth with a dressing element while supplying a dressing liquid to said polishing cloth; and

supplying an abrasive liquid for polishing said another workpiece to said polishing cloth for a predetermined period of time prior to said subsequent polishing process;

said dressing liquid being of a different composition than said abrasive liquid and being capable of diluting said abrasive liquid.

2. A method according to claim 1, wherein said predetermined period of time is during said dressing step and immediately precedes said subsequent polishing process, and said dressing step is carried out while supplying said abrasive liquid to said polishing cloth.

3. A method according to claim 2, wherein said dressing liquid is not supplied during said predetermined period of time.

4. A method according to claim 1, wherein said predetermined period of time is between said dressing step and said subsequent polishing process.

5. A method according to claim 1, wherein said dressing step comprises pressing a dressing element having diamond pellets against said polishing cloth in the presence of said dressing liquid.

6. A method according to claim 1, wherein said dressing step comprises pressing a dressing element having a brush against said polishing cloth in the presence of said dressing liquid.

7. A method of manufacturing a semiconductor wafer, said method comprising

dressing a polishing cloth with a dressing element while supplying a dressing liquid to a polishing cloth;

polishing a semiconductor wafer by a polishing apparatus; and

supplying an abrasive liquid for polishing said semiconductor wafer to said polishing cloth for a predetermined period of time prior to said polishing process;

said dressing liquid being of a different composition than said abrasive liquid and being capable of diluting said abrasive liquid.

8. An apparatus for dressing a polishing cloth between polishing processes, each for polishing a workpiece, said apparatus comprising:

a dressing head for holding a dressing element to dress a polishing cloth;

a dressing liquid supply nozzle for supplying a dressing liquid used to dress the polishing cloth to the polishing cloth during a dressing process;

an abrasive liquid supply nozzle separate from said dressing liquid supply nozzle for supplying an abrasive liquid used to polish a workpiece to the polishing cloth during a polishing process; and

the dressing liquid being of a different composition than the abrasive liquid and being capable of diluting the abrasive liquid; and

means for controlling the supply of abrasive liquid from said abrasive liquid supply nozzle to ensure that the abrasive liquid is supplied to the polishing cloth for a predetermined period of time prior to the polishing process.

9. An apparatus according to claim 8, wherein said predetermined period of time is during said dressing process and immediately precedes said polishing process, and said abrasive liquid supply nozzle is operable to supply said abrasive liquid to the polishing cloth during said dressing process.

10. An apparatus according to claim 9, wherein said dressing liquid supply nozzle is operable to not supply said dressing liquid during said predetermined period of time.

11. An apparatus according to claim 8, wherein said predetermined period of time is between said dressing process and said polishing process.

12. An apparatus according to claim 8, wherein said dressing element comprises a disk with diamond pellets attached thereto.

13. An apparatus according to claim 8, wherein said dressing element comprises a disk with a brush attached thereto.

14. An apparatus for manufacturing a semiconductor wafer, said apparatus comprising:

a polishing apparatus for polishing a semiconductor wafer;

a dressing head for holding a dressing element to dress a polishing cloth;

a dressing liquid supply nozzle for supplying a dressing liquid used to dress the polishing cloth to the polishing cloth during a dressing process;

an abrasive liquid supply nozzle separate from said dressing liquid supply nozzle for supplying an abrasive liquid used to polish the semiconductor wafer to the polishing cloth during a polishing process; and

the dressing liquid being of a different composition than said abrasive liquid and being capable of diluting said abrasive liquid; and

means for controlling the supply of abrasive liquid from said abrasive liquid supply nozzle to ensure that the abrasive liquid is supplied to the polishing cloth for a predetermined period of time prior to the polishing process.