Selective plasma deposition
First Claim
1. A method for performing area-selective deposition comprising steps of:
- (a) placing a substrate having a surface with a first substrate surface region and a second substrate surface region on a substrate support in a deposition chamber, wherein the first substrate surface region and the second substrate surface region have a different physical surface characteristic;
(b) forming a gas plasma over the substrate surface by means of a plasma power supply acting through an electrode other than the substrate support;
(c) introducing one or more elemental components to be deposited on the substrate surface into the plasma, causing the one or more elemental components to deposit on the first and second substrate surface regions;
(d) electrically biasing the substrate surface to a common bias value over both the first and the second substrate surface regions by a bias power supply separate from the plasma power supply and connected to the substrate support, thereby attracting ions from the plasma to bombard both the first and second substrate surface regions, net deposition rate on any region then being the algebraic sum of a positive deposition rate from step (c) and a negative backsputtering rate caused by the ion bombardment due to the substrate bias; and
(e) recognizing that the different physical surface characteristic of the first and the second regions as recited in the step (a) result in a difference in binding energy at the surface of each region in deposition of the one or more elemental components to be deposited, providing therefore a different net deposition rate for each region, adjusting the common bias value applied to the substrate surface by the bias power supply to a bias value at which positive net deposition occurs on only the first substrate surface region to form a solid film thereon.
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Accused Products
Abstract
A deposition process provides selective areal deposition on a substrate surface having separate areas of different materials comprises forming a plasma over the substrate, injecting coating species into the plasma by either of sputtering or gaseous injection, adding a reactive gas for altering surface binding energy at the coating surface, and biasing the substrate during deposition to bombard the substrate with ionic species from the plasma. Surface binding energy is altered, in the general case, differently for the separate areas, enhancing selectivity. Bias power is managed to exploit the alteration in surface binding energy. In the case of gaseous injection of the coating species, and in some cases of sputtering provision of the coating material, the temperature of the substrate surface is managed as well. In an alternative embodiment, selectivity is to phase of the coating material rather than to specific areas on the substrate, and a selected phase may be preferentially deposited on the substrate.
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Citations
32 Claims
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1. A method for performing area-selective deposition comprising steps of:
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(a) placing a substrate having a surface with a first substrate surface region and a second substrate surface region on a substrate support in a deposition chamber, wherein the first substrate surface region and the second substrate surface region have a different physical surface characteristic; (b) forming a gas plasma over the substrate surface by means of a plasma power supply acting through an electrode other than the substrate support; (c) introducing one or more elemental components to be deposited on the substrate surface into the plasma, causing the one or more elemental components to deposit on the first and second substrate surface regions; (d) electrically biasing the substrate surface to a common bias value over both the first and the second substrate surface regions by a bias power supply separate from the plasma power supply and connected to the substrate support, thereby attracting ions from the plasma to bombard both the first and second substrate surface regions, net deposition rate on any region then being the algebraic sum of a positive deposition rate from step (c) and a negative backsputtering rate caused by the ion bombardment due to the substrate bias; and (e) recognizing that the different physical surface characteristic of the first and the second regions as recited in the step (a) result in a difference in binding energy at the surface of each region in deposition of the one or more elemental components to be deposited, providing therefore a different net deposition rate for each region, adjusting the common bias value applied to the substrate surface by the bias power supply to a bias value at which positive net deposition occurs on only the first substrate surface region to form a solid film thereon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method for phase-selective deposition on a substrate, comprising steps of:
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(a) placing a substrate having a surface upon which deposition of a first physical phase of an element or compound is desired in a deposition chamber upon a substrate support which may be electrically biased by a bias power supply; (b) establishing a plasma deposition process wherein the element or compound desired deposits on the substrate in both the first physical phase and a second physical phase; (c) providing a bias value to the substrate support, such that ions from the plasma are attracted to and bombard the substrate surface, causing thereby a backsputtering effect; and
(c) recognizing that the positive deposition rate for each of the first and the second physical phases will differ under identical deposition conditions, and that the net deposition rate for the first and second physical phases will differ and decrease with increased substrate bias because the backsputtering rate will increase, there being thereby a point of bias value as bias is increased at which the net deposition rate for the second physical phase will become zero while the net deposition rate for the first physical phase other is still positive, adjusting the bias value to a value at which only the net deposition rate for the first physical phase is positive thereby selectively depositing the first physical phase in a film. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification