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Selective plasma deposition

  • US 5,858,471 A
  • Filed: 10/03/1996
  • Issued: 01/12/1999
  • Est. Priority Date: 04/08/1994
  • Status: Expired due to Term
First Claim
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1. A method for performing area-selective deposition comprising steps of:

  • (a) placing a substrate having a surface with a first substrate surface region and a second substrate surface region on a substrate support in a deposition chamber, wherein the first substrate surface region and the second substrate surface region have a different physical surface characteristic;

    (b) forming a gas plasma over the substrate surface by means of a plasma power supply acting through an electrode other than the substrate support;

    (c) introducing one or more elemental components to be deposited on the substrate surface into the plasma, causing the one or more elemental components to deposit on the first and second substrate surface regions;

    (d) electrically biasing the substrate surface to a common bias value over both the first and the second substrate surface regions by a bias power supply separate from the plasma power supply and connected to the substrate support, thereby attracting ions from the plasma to bombard both the first and second substrate surface regions, net deposition rate on any region then being the algebraic sum of a positive deposition rate from step (c) and a negative backsputtering rate caused by the ion bombardment due to the substrate bias; and

    (e) recognizing that the different physical surface characteristic of the first and the second regions as recited in the step (a) result in a difference in binding energy at the surface of each region in deposition of the one or more elemental components to be deposited, providing therefore a different net deposition rate for each region, adjusting the common bias value applied to the substrate surface by the bias power supply to a bias value at which positive net deposition occurs on only the first substrate surface region to form a solid film thereon.

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