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Method for fabricating intermetal dielectric insulation using anisotropic plasma oxides and low dielectric constant polymers

  • US 5,858,869 A
  • Filed: 06/03/1997
  • Issued: 01/12/1999
  • Est. Priority Date: 06/03/1997
  • Status: Expired due to Term
First Claim
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1. A method for fabricating multilevel metal interconnections having low dielectric constant insulators on a substrate comprising the steps of:

  • a. providing a semiconductor substrate having semiconductor devices having contacts protected by a barrier layer;

    b. depositing a first conductive layer for-contacting regions of said devices;

    c. patterning said first conductive layer to form interconnections for said devices;

    d. depositing an anisotropic plasma oxide over said patterned first conductive layer, said anisotropic plasma oxide being thicker on the top surface than on the sidewalls of said patterned conductive layer;

    e. depositing a low dielectric constant insulator on said anisotropic plasma oxide;

    f. planarizing said low dielectric constant insulator down to and further planarizing into said anisotropic plasma oxide by chemical/mechanical polishing to said top surface of said patterned first conductive layer;

    g. depositing a fluorine-doped oxide on said low dielectric insulator on said patterned first conductive layer;

    h. forming via holes in said fluorine-doped oxide to said patterned first conductive layer;

    i. depositing a second conductive layer on said fluorine-doped oxide and in said via holes;

    j. patterning said second conductive layer to form a second level of metal interconnections.

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